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Applied Physics Letters / Volume 96 / Issue 9 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 093503 (2010); http://dx.doi.org/10.1063/1.3340943 (3 pages)

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Woong Hee Jeong1, Gun Hee Kim1, Hyun Soo Shin1, Byung Du Ahn1, Hyun Jae Kim1, Myung-Kwan Ryu2, Kyung-Bae Park2, Jong-Baek Seon2, and Sang Yoon Lee2

1School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
2Display Laboratory, Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-Do 449-712, Republic of Korea

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(Received 9 October 2009; accepted 10 February 2010; published online 4 March 2010)

The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

association, hafnium compounds, indium compounds, thin film transistors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3340943

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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