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Applied Physics Letters / Volume 96 / Issue 9 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 093505 (2010); http://dx.doi.org/10.1063/1.3334724 (3 pages)

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

T. Schutz-Kuchly, J. Veirman, S. Dubois, and D. R. Heslinga

CEA, LITEN, INES, 50 Avenue du Lac Léman, F-73377, Le Bourget du Lac, France

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(Received 15 January 2010; accepted 5 February 2010; published online 5 March 2010)

This letter focuses on the evolution under illumination of the carrier lifetime in n-type boron–phosphorus compensated Czochralski silicon. Our results show a Light-Induced-Degradation (LID) of the carrier lifetime which we prove to be related to additional boron. The activation energy of the annihilation mechanism for this boron-related defect was found to be 1.7 eV, in agreement with values concerning the annihilation of the BOi2 complex responsible for the LID of boron-doped p-type silicon. This strongly suggests that BOi2 are also responsible for the degradation of n-type boron–phosphorus compensated silicon unlike what was expected from previous studies on compensated p-type silicon.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

boron, carrier lifetime, doping profiles, elemental semiconductors, phosphorus, photovoltaic effects, semiconductor doping, silicon

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 72.40.+w

    Photoconduction and photovoltaic effects

  • 61.72.uf

    Ge and Si

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3334724

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Dubois, N. Enjalbert, and J. P. Garandet, Appl. Phys. Lett. 93, 103510 (2008)APPLAB000093000010103510000001.

    J. Schmidt and K. Bothe, Phys. Rev. B 69, 024107 (2004).

    D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs, J. Appl. Phys. 105, 093704 (2009)JAPIAU000105000009093704000001.

    S. Dubois, N. Enjalbert, and J. P. Garandet, Appl. Phys. Lett. 93, 032114 (2008)APPLAB000093000003032114000001.

    D. W. Palmer, K. Bothe, and J. Schmidt, Phys. Rev. B 76, 035210 (2007).

    S. Rein and S. W. Glunz, Appl. Phys. Lett. 82, 1054 (2003)APPLAB000082000007001054000001.

    V. Tsvetov, W. Allred, and W. G. Spitzer, Appl. Phys. Lett. 10, 326 (1967)APPLAB000010000011000326000001.

    B. Lim, A. Liu, D. Macdonald, K. Bothe, and J. Schmidt, Appl. Phys. Lett. 95, 232109 (2009)APPLAB000095000023232109000001.


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