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Applied Physics Letters / Volume 96 / Issue 9 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 093506 (2010); http://dx.doi.org/10.1063/1.3337103 (3 pages)

Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

Hee-Wook You and Won-Ju Cho

Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Republic of Korea

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(Received 4 November 2009; accepted 3 February 2010; published online 5 March 2010)

MHOS (metal-HfO2–SiO2–Si) structure capacitors were fabricated to investigate the charge trapping properties of HfO2 layer with various thicknesses for the applications of charge trap flash (CTF) memory devices. Also, the centroid of charge trap in HfO2 layer was extracted by constant current stress method and compared with that of conventional Si3N4 layer. The gate leakage current of MHOS capacitor due to tunneling was significantly reduced by stacking the HfO2 trap layer on thin SiO2 tunnel layer. The MHOS capacitors showed a larger memory window than the MNOS (metal-Si3N4–SiO2–Si) capacitors at the same trap layer thickness, because the HfO2 layer has better charge trapping efficiency than the Si3N4 layer. It is found that ultrathin HfO2 trap layer with a thickness of 2 nm stored almost the same charges with Si3N4 layer with a thickness of 7 nm. Consequently, the application of ultrathin HfO2 to charge storage layer can considerably improve the performance and enhance the high density of CTF memory.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical conductivity, electron traps, elemental semiconductors, flash memories, hafnium compounds, hole traps, internal stresses, leakage currents, MIS capacitors, silicon, silicon compounds, tunnelling

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3337103

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Ramanathan, P. C. McIntyre, S. Guha, and E. Gusev, Appl. Phys. Lett. 84, 389 (2004)APPLAB000084000003000389000001.

    M. -H. Jung, K. -S. Kim, G. -H. Park, and W. -J. Cho, Appl. Phys. Lett. 94, 053508 (2009)APPLAB000094000005053508000001.


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