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1 Mar 2010

Volume 96, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 091102 (2010); http://dx.doi.org/10.1063/1.3332591 (3 pages)

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, et al.
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The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors

E. R. Hsieh and Steve S. Chung

Appl. Phys. Lett. 96, 093501 (2010); http://dx.doi.org/10.1063/1.3340926 (3 pages) | Cited 5 times

Online Publication Date: 4 March 2010

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The source/drain in an n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with solid phase epitaxial (SPE) implanted Si:C before the spacer formation is proposed. Compared to the conventional nMOSFET with SPE implanted Si:C after the spacer formation, it brings in proximity to the device channel and shows great improvement of electron mobility via the stronger tensile strain effect. Experimental measurements showed that the electron mobility in the proposed process is increased by 105% over that of the control devices. At a gate length of 40 nm, an increase of more than 67% for the drain current, comparing to those of the conventional Si:C source/drain nMOSFET, has been achieved.
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85.30.Tv Field effect devices

Low-loss superconducting resonant circuits using vacuum-gap-based microwave components

Katarina Cicak, Dale Li, Joshua A. Strong, Michael S. Allman, Fabio Altomare, Adam J. Sirois, Jed D. Whittaker, John D. Teufel, and Raymond W. Simmonds

Appl. Phys. Lett. 96, 093502 (2010); http://dx.doi.org/10.1063/1.3304168 (3 pages) | Cited 8 times

Online Publication Date: 4 March 2010

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We have produced high-quality complex microwave circuits, such as multiplexed resonators and superconducting phase qubits, using a “vacuum-gap” technology that eliminates lossy dielectric materials. We have improved our design and fabrication strategy beyond our earlier work, leading to increased yield, enabling the realization of these complex circuits. We incorporate both novel vacuum-gap wiring crossovers for gradiometric inductors and vacuum-gap capacitors (VGC) on chip to produce resonant circuits that have large internal quality factors (30 000<QI<165 000) at 50 mK, outperforming most dielectric-filled devices. Resonators with VGCs as large as 180 pF confirm single mode behavior of our lumped-element components.
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85.25.-j Superconducting devices

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Byung Du Ahn, Hyun Jae Kim, Myung-Kwan Ryu, Kyung-Bae Park, Jong-Baek Seon, and Sang Yoon Lee

Appl. Phys. Lett. 96, 093503 (2010); http://dx.doi.org/10.1063/1.3340943 (3 pages) | Cited 38 times

Online Publication Date: 4 March 2010

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The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.
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85.30.Tv Field effect devices

Capacitive-type counter of nanoparticles in air

I. Iskra, A. Detela, M. Viršek, V. Nemanič, D. Križaj, D. Golob, J. T. van Elteren, and M. Remškar

Appl. Phys. Lett. 96, 093504 (2010); http://dx.doi.org/10.1063/1.3352554 (3 pages) | Cited 1 time

Online Publication Date: 5 March 2010

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A capacitive-type counter of nanoparticles in air, based on measurement of the capacitance of a capacitor with a variable dielectric part, has been developed. The method is suitable for detection of aerosols in a wide concentration range, regardless of shape or chemical composition. The method is demonstrated experimentally and verified by numerical simulations. The counter allows for construction of a simple, portable, and cheap nanoparticle detector for air quality control.
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89.60.Ec Environmental safety
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
84.32.Tt Capacitors
82.70.Rr Aerosols and foams

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

T. Schutz-Kuchly, J. Veirman, S. Dubois, and D. R. Heslinga

Appl. Phys. Lett. 96, 093505 (2010); http://dx.doi.org/10.1063/1.3334724 (3 pages) | Cited 13 times

Online Publication Date: 5 March 2010

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This letter focuses on the evolution under illumination of the carrier lifetime in n-type boron–phosphorus compensated Czochralski silicon. Our results show a Light-Induced-Degradation (LID) of the carrier lifetime which we prove to be related to additional boron. The activation energy of the annihilation mechanism for this boron-related defect was found to be 1.7 eV, in agreement with values concerning the annihilation of the BOi2 complex responsible for the LID of boron-doped p-type silicon. This strongly suggests that BOi2 are also responsible for the degradation of n-type boron–phosphorus compensated silicon unlike what was expected from previous studies on compensated p-type silicon.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
61.72.uf Ge and Si

Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

Hee-Wook You and Won-Ju Cho

Appl. Phys. Lett. 96, 093506 (2010); http://dx.doi.org/10.1063/1.3337103 (3 pages) | Cited 11 times

Online Publication Date: 5 March 2010

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MHOS (metal-HfO2–SiO2–Si) structure capacitors were fabricated to investigate the charge trapping properties of HfO2 layer with various thicknesses for the applications of charge trap flash (CTF) memory devices. Also, the centroid of charge trap in HfO2 layer was extracted by constant current stress method and compared with that of conventional Si3N4 layer. The gate leakage current of MHOS capacitor due to tunneling was significantly reduced by stacking the HfO2 trap layer on thin SiO2 tunnel layer. The MHOS capacitors showed a larger memory window than the MNOS (metal-Si3N4–SiO2–Si) capacitors at the same trap layer thickness, because the HfO2 layer has better charge trapping efficiency than the Si3N4 layer. It is found that ultrathin HfO2 trap layer with a thickness of 2 nm stored almost the same charges with Si3N4 layer with a thickness of 7 nm. Consequently, the application of ultrathin HfO2 to charge storage layer can considerably improve the performance and enhance the high density of CTF memory.
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84.32.Tt Capacitors
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