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1 Mar 2010

Volume 96, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 091102 (2010); http://dx.doi.org/10.1063/1.3332591 (3 pages)

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, et al.
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Observation of domain structure in 001 orientated NaNbO3 films deposited on (001)SrTiO3 substrates by laser beam scanning microscopy

Seiji Yamazoe, Hiroyuki Sakurai, Takehisa Saito, and Takahiro Wada

Appl. Phys. Lett. 96, 092901 (2010); http://dx.doi.org/10.1063/1.3330963 (3 pages) | Cited 3 times

Online Publication Date: 1 March 2010

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A laser beam scanning microscope (LSM) was used to observe the domain structure of 001 orientated NaNbO3 (NN) films on SrRuO3/(001)SrTiO3 substrates. The LSM micrograph clearly showed the domains and the domain walls of NN film. Using a polarization plate revealed that the deposited NN film had antiferroelectric 90° domains separated by {100} domain walls. When 001 orientated NN film was applied by an electric field, the 90° domains and the {100} domain walls disappeared and a new domain structure and {110} domain walls were created. This drastic change is due to the formation of new 60° domains.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition

Optimization of piezoelectric properties for [001]c poled 0.94Pb(Zn1/3Nb2/3)O3–0.06PbTiO3 single crystals

Yang Xiang, Rui Zhang, and Wenwu Cao

Appl. Phys. Lett. 96, 092902 (2010); http://dx.doi.org/10.1063/1.3314285 (3 pages) | Cited 5 times

Online Publication Date: 1 March 2010

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The piezoelectric properties of [001]c poled 0.94Pb(Zn1/3Nb2/3)O3–0.06PbTiO3 single crystals were greatly enhanced by controlling their domain configurations. Contrary to the interpretation of charged domain walls being the main contributor to the piezoelectric enhancement, we found that smaller domain size and more neutral domain walls were the main contributors for the piezoelectric enhancement of these multidomain crystals. The properties of 109° neutral domain walls in 0.94Pb(Zn1/3Nb2/3)O3–0.06PbTiO3 single crystals were extracted by using a piezoelectric domain wall model.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.Dj Domain structure; hysteresis

Polarization inversion in a ferroelectric liquid crystal studied by math nuclear magnetic resonance

J. K. Cha, K. W. Lee, Cheol Eui Lee, and J.-I. Jin

Appl. Phys. Lett. 96, 092903 (2010); http://dx.doi.org/10.1063/1.3337101 (3 pages) | Cited 1 time

Online Publication Date: 2 March 2010

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A ferroelectric liquid crystal, S-2-methylbutyl 4-n-octanoyloxybiphenyl-4′-carboxylate, undergoing a characteristic polarization inversion, has been studied by math nuclear magnetic resonance (NMR). In addition to the discontinuities at the first-order isotropic and recrystallization phase transitions, the nuclear magnetic relaxation revealed a weak anomaly attributed to the soft mode at the Sm-A−Sm-C∗ liquid crystalline phase transition. Besides, the polarization inversion in the Sm-C∗ phase was manifested in the nuclear magnetic relaxation as well as in the NMR lineshape and in the temperature-dependent relative peak positions of the NMR line components, indicating that the polarization inversion is associated with a conformational transition.
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64.70.mj Experimental studies of liquid crystal transitions
76.60.Es Relaxation effects
61.30.-v Liquid crystals
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.80.-e Ferroelectricity and antiferroelectricity

Microstress relaxation effect of Pb(Zr0.52Ti0.48)O3 films with thicknesses for micro/nanopiezoelectric device

Jeong Hoon Lee, Kyo Seon Hwang, and Tae Song Kim

Appl. Phys. Lett. 96, 092904 (2010); http://dx.doi.org/10.1063/1.3330897 (3 pages) | Cited 4 times

Online Publication Date: 4 March 2010

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In this study, we analyzed the microstress of Pb(Zr0.52Ti0.48)O3 (PZT) films using Raman spectrum and the macrostress using the wafer curvature method. Based on the stress analysis, we also determined the relationship between the residual stress and piezoelectric properties. We found that a thickness of 1 μm was critical since the stress relaxation starts due to surface roughening. Similarly, the film thickness dependence of the piezoelectric coefficient had saturation values around 1 μm, where the preferred orientation started to change from (111) to (110), indicating that the piezoelectric response was related to the stress relaxation with a preferred orientation change.
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77.55.hj PZT
68.55.jd Thickness
68.55.jm Texture
68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner, and Veena Misra

Appl. Phys. Lett. 96, 092905 (2010); http://dx.doi.org/10.1063/1.3355547 (3 pages) | Cited 1 time

Online Publication Date: 5 March 2010

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A technique of scavenging the SiO2 interfacial layer (IL) to improve the electrical performance of Al2O3 as the interpoly dielectric for flash memories has been studied. Scavenging was performed by the reaction of a thin La2O3 layer with the native oxide to form a high-κ lanthanum silicate. Significant improvement in the charge trapping and leakage characteristics were obtained. Transmission electron microscopy analysis was done to corroborate the electrical results. Results show that seven orders of magnitude leakage reduction was achieved by the replacement of the SiO2 IL with a higher-κ dielectric LaSiO at the Si interface.
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84.30.Sk Pulse and digital circuits
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
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