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1 Mar 2010

Volume 96, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 96, 091102 (2010); http://dx.doi.org/10.1063/1.3332591 (3 pages)

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, et al.
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Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Wei Zhao, Ru-Zhi Wang, Xue-Mei Song, Hao Wang, Bo Wang, Hui Yan, and Paul K. Chu

Appl. Phys. Lett. 96, 092101 (2010); http://dx.doi.org/10.1063/1.3352556 (3 pages) | Cited 2 times

Online Publication Date: 1 March 2010

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A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/cm2 and yields a stable emission current of 40 mA/cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Electron beam induced current investigations of Pt/SrTiO3−x interface exposed to chemical and electrical stresses

W. Jiang, D. Evans, J. A. Bain, M. Skowronski, and P. A. Salvador

Appl. Phys. Lett. 96, 092102 (2010); http://dx.doi.org/10.1063/1.3339303 (3 pages) | Cited 1 time

Online Publication Date: 1 March 2010

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Pt Schottky contacts were fabricated on oxygen deficient SrTiO3−x [001] single crystals. Electron beam induced current (EBIC) and atomic force microscopy images taken on etched SrTiO3 (001) surfaces revealed that the dark {001} oriented lines observed in EBIC correlate with arrays of dislocation etch pits. Annealing contacts in air (at 120 °C for 10 min) changed the dislocation-related EBIC contrast from dark to bright. Electrically stressing the air-annealed Schottky contacts at −10 V for 1 h caused the dislocation-related EBIC contrast to return to dark. The contrast changes are interpreted as arising from oxygen vacancy motion in response to chemical or electrical stresses.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Ps Atomic force microscopy (AFM)
81.40.Gh Other heat and thermomechanical treatments
61.72.jd Vacancies
73.30.+y Surface double layers, Schottky barriers, and work functions

Fabrication and characterization of an induced GaAs single hole transistor

O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, and Y. Hirayama

Appl. Phys. Lett. 96, 092103 (2010); http://dx.doi.org/10.1063/1.3336011 (3 pages) | Cited 6 times

Online Publication Date: 2 March 2010

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We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.
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85.35.Gv Single electron devices
89.20.Kk Engineering
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Influence of Na on Cu(In,Ga)Se2 solar cells grown on polyimide substrates at low temperature: Impact on the Cu(In,Ga)Se2/Mo interface

R. Caballero, C. A. Kaufmann, T. Eisenbarth, A. Grimm, I. Lauermann, T. Unold, R. Klenk, and H. W. Schock

Appl. Phys. Lett. 96, 092104 (2010); http://dx.doi.org/10.1063/1.3340459 (3 pages) | Cited 12 times

Online Publication Date: 2 March 2010

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There are still open questions regarding the nature of the positive effect of the presence of Na on the performance of Cu(In,Ga)Se2 based, chalcopyrite thin film solar cells, especially at low processing temperatures. Studying Cu(In,Ga)Se2 thin film devices fabricated from low-temperature coevaporated absorbers on polyimide substrates by admittance and J-V-T measurements, characteristic properties are identified for different amounts of Na present during the growth. A roll-over behavior can be directly correlated with the Na-content. X-ray photoelectron spectroscopy shows the development of a MoSe2 phase at the back contact of the device. Efficiencies of 15.1% with MgF2 antireflection coating are demonstrated.
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88.40.jn Thin film Cu-based I-III-VI2 solar cells
81.15.Kk Vapor phase epitaxy; growth from vapor phase
88.40.H- Solar cells (photovoltaics)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.40.Ns Metal-nonmetal contacts

Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son, Sunjae Chung, Sun-young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, X. Liu, and J. K. Furdyna

Appl. Phys. Lett. 96, 092105 (2010); http://dx.doi.org/10.1063/1.3339301 (3 pages) | Cited 4 times

Online Publication Date: 3 March 2010

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The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.
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75.30.Gw Magnetic anisotropy
75.50.Dd Nonmetallic ferromagnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects
65.40.G- Other thermodynamical quantities

Influence of 4f electronic states on the surface states of rare-earth hexaborides

Swapnil Patil, Ganesh Adhikary, Geetha Balakrishnan, and Kalobaran Maiti

Appl. Phys. Lett. 96, 092106 (2010); http://dx.doi.org/10.1063/1.3340461 (3 pages) | Cited 3 times

Online Publication Date: 3 March 2010

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We study the surface electronic structure of a series of rare-earth hexaborides using state-of-the-art high resolution photoemission spectroscopy. Experimental results reveal a surface state around 1.8 eV binding energy in all the hexaborides indicating its generic nature in this class of compounds. The surface and bulk electronic structures near the Fermi level, ϵF are almost similar in each of the compounds. This suggests an interesting possibility of fabricating new materials possessing low work function like LaB6 where the behavior of mobile electrons can be tuned by rare-earth substitutions.
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73.20.At Surface states, band structure, electron density of states
72.20.Fr Low-field transport and mobility; piezoresistance
71.20.Ps Other inorganic compounds
71.15.Nc Total energy and cohesive energy calculations
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions

Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress

Bogdan Bercu, Laurent Montès, Florent Rochette, Mireille Mouis, Xu Xin, and Panagiota Morfouli

Appl. Phys. Lett. 96, 092107 (2010); http://dx.doi.org/10.1063/1.3343348 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2010

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In this contribution we investigate an original method to apply high values of biaxial stress: The integration of submicronic fully depleted silicon on insulator transistors on ultrathin silicon membranes. The membranes are micromachined in the device substrate, the buried oxide facilitating the control of the membrane thickness below 1 μm. High values of biaxial stress can thus be applied on the transistor channel without the drawbacks of conventional methods. The experimental results obtained using 750 nm thick membranes are presented. The piezoresistive longitudinal coefficient obtained for strained silicon on insulator wafer (240×10−12 Pa−1) is in good agreement with the results obtained by the four-probe bending method.
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85.30.Tv Field effect devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho, Seong Jin Cho, Yoon Ho Cho, and Jong-Heun Lee

Appl. Phys. Lett. 96, 092108 (2010); http://dx.doi.org/10.1063/1.3353973 (3 pages) | Cited 1 time

Online Publication Date: 4 March 2010

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Oxygen incorporated Ge2Sb2Te5 (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb2Te4 and Sb2Te3 appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.
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68.55.ag Semiconductors
78.66.-w Optical properties of specific thin films
68.60.Dv Thermal stability; thermal effects
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
68.43.Nr Desorption kinetics

Electronic properties of ultrananocrystalline diamond surfaces

Simon Q. Lud, Martin Niedermeier, Philipp S. Koch, Paola Bruno, Dieter M. Gruen, Martin Stutzmann, and Jose A. Garrido

Appl. Phys. Lett. 96, 092109 (2010); http://dx.doi.org/10.1063/1.3340898 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2010

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We have characterized ultrananocrystalline diamond films with different surface terminations by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The surface terminations were performed by plasma functionalization in atmospheres of hydrogen, fluorine, and oxygen. XPS proves the dense monolayer coverage of the surface functionalization. AFM and STM show low impact of the plasma treatment on the surface morphology. STS has been used to investigate the surface electronic properties, for H-terminated surfaces the electronic structure is dominated by the sp3 carbon phase of the grain surfaces; for O- and F-terminated surfaces, however, sp2 carbon from the grain boundaries seems to determine the surface band gap.
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71.20.Mq Elemental semiconductors
61.46.-w Structure of nanoscale materials
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Mm Grain and twin boundaries

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Markus Hofstetter, John Howgate, Ian D. Sharp, Maren Funk, Martin Stutzmann, Herwig G. Paretzke, and Stefan Thalhammer

Appl. Phys. Lett. 96, 092110 (2010); http://dx.doi.org/10.1063/1.3334682 (3 pages) | Cited 2 times

Online Publication Date: 5 March 2010

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We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
87.80.-y Biophysical techniques (research methods)
87.85.Ox Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)

Junction properties of Au/ZnO single nanowire Schottky diode

Sachindra Nath Das, Ji-Huck Choi, Jyoti Prakash Kar, Kyeong-Ju Moon, Tae Il Lee, and Jae-Min Myoung

Appl. Phys. Lett. 96, 092111 (2010); http://dx.doi.org/10.1063/1.3339883 (3 pages) | Cited 13 times

Online Publication Date: 5 March 2010

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In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.
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85.30.Kk Junction diodes
81.07.Gf Nanowires
79.40.+z Thermionic emission

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou, Ken Uchida, and Shunri Oda

Appl. Phys. Lett. 96, 092112 (2010); http://dx.doi.org/10.1063/1.3294329 (3 pages) | Cited 2 times

Online Publication Date: 5 March 2010

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In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.
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85.30.Tv Field effect devices

Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor

Ran Cheng, Bin Liu, and Yee-Chia Yeo

Appl. Phys. Lett. 96, 092113 (2010); http://dx.doi.org/10.1063/1.3340947 (3 pages) | Cited 3 times

Online Publication Date: 5 March 2010

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We report the investigation of carrier backscattering characteristics of compressively strained p-channel field-effect transistors (p-FETs) with diamondlike carbon (DLC) liner stressor. p-FETs strained by the DLC liner exhibit up to ∼ 40% enhancement in carrier injection velocity υinj. However, a slight reduction in ballistic efficiency Bsat is also observed in the DLC stressed p-FETs. Despite the Bsat degradation, an overall boost in saturation drive current IDsat is achieved. For a DLC stressed p-FET with gate length LG = 90 nm, a ∼ 36% enhancement in IDsat is observed with a ∼ 40% improvement in υinj. The dependence of IDsat on υinj and carrier mobility μ is also discussed in this letter.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
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