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1 Mar 2010

Volume 96, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 091102 (2010); http://dx.doi.org/10.1063/1.3332591 (3 pages)

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, et al.
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Mechanism of morphological transition in heteroepitaxial growth of metal films

Cui-Lian Li and Chin-Kun Hu

Appl. Phys. Lett. 96, 093101 (2010); http://dx.doi.org/10.1063/1.3332479 (3 pages) | Cited 1 time

Online Publication Date: 1 March 2010

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We investigate the mechanisms of three-dimensional (3D) to two-dimensional (2D) morphological transition in the heteroepitaxial growth of metal films by kinetic Monte Carlo simulations, and find that the difference between two types of neighbor interactions play an important role on the film morphology. The difference will vanishes with the film growing up. Just what the difference vanishes causes the morphological transition from 3D-cluster to 2D-island. Combined with elastic energy, we can predict which layer first occurs morphological transition. Our predicted results are consistent with the experiment reported by Su et al. [Phys. Rev. B 71, 073304 (2005) ].
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68.55.J- Morphology of films
81.15.Aa Theory and models of film growth
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.A- Nucleation and growth

A compact, transportable, microchip-based system for high repetition rate production of Bose–Einstein condensates

Daniel M. Farkas, Kai M. Hudek, Evan A. Salim, Stephen R. Segal, Matthew B. Squires, and Dana Z. Anderson

Appl. Phys. Lett. 96, 093102 (2010); http://dx.doi.org/10.1063/1.3327812 (3 pages) | Cited 10 times

Online Publication Date: 1 March 2010

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We present a compact, transportable system that produces Bose–Einstein condensates near the surface of an integrated atom microchip. The system occupies a volume of 0.4 m3, operates at a repetition rate as high as 0.3 Hz, and consumes an average power of 525 W. Evaporative cooling in a chip trap with trap frequencies of several kilohertz leads to nearly pure condensates containing 1.9×104 mathb atoms. Partial condensates are observed at a temperature of 1.58(8) μK, close to the theoretical transition temperature of 1.1 μK.
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85.70.Sq Magnetooptical devices
75.50.Ww Permanent magnets
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.50.Wk Mechanical effects of light on material media, microstructures and particles

Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

Monalisa Mazumder, Theodorian Borca-Tasciuc, Sean C. Teehan, Emilio Stinzianni, Harry Efstathiadis, and Slowa Solovyov

Appl. Phys. Lett. 96, 093103 (2010); http://dx.doi.org/10.1063/1.3337093 (3 pages) | Cited 4 times

Online Publication Date: 1 March 2010

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The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.
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66.70.Df Metals, alloys, and semiconductors
63.50.Lm Glasses and amorphous solids
68.37.Og High-resolution transmission electron microscopy (HRTEM)
68.65.Ac Multilayers
63.22.Dc Free films
68.55.ag Semiconductors

Optically and thermally manipulated spin transport through a quantum dot

Yibo Ying and Guojun Jin

Appl. Phys. Lett. 96, 093104 (2010); http://dx.doi.org/10.1063/1.3337094 (3 pages) | Cited 10 times

Online Publication Date: 1 March 2010

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We study the associated effects of polarized light and temperature bias on the charge and spin transport through a semiconductor quantum dot connected to two ferromagnetic electrodes. A spin-dependent thermoelectric current is generated in such a system, and a totally pure spin current can be obtained without an accompanying charge current. Furthermore, the sign reversal of tunnel magnetoresistance is found, which is induced by temperature difference and Rabi frequency.
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78.67.Hc Quantum dots
72.20.Pa Thermoelectric and thermomagnetic effects
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
73.21.La Quantum dots

Frequency analysis of nanotubes with consideration of surface effects

Behrooz Farshi, Abbas Assadi, and Ali Alinia-ziazi

Appl. Phys. Lett. 96, 093105 (2010); http://dx.doi.org/10.1063/1.3332579 (3 pages) | Cited 12 times

Online Publication Date: 2 March 2010

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Consideration of surface effects in microscaled and nanoscaled materials is important for accurate prediction of their dynamic behavior. In this study, the Timoshenko beam model is modified to include the surface effects and used to analyze the vibration of nanotubes as well as calculate their natural frequencies. The thin surface layers have been taken into account for rotary inertia computation. Through an example it is shown that dynamic behavior of nanoscaled tubes with consideration of surface effects considerably deviates from the results obtained by classical theories. Plots illustrating such deviations are given to support the conclusions.
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63.22.Gh Nanotubes and nanowires
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
61.46.Fg Nanotubes

Electron-induced adhesion and patterning of gold nanoparticles

I. Torchinsky, N. Amdursky, A. Inberg, and G. Rosenman

Appl. Phys. Lett. 96, 093106 (2010); http://dx.doi.org/10.1063/1.3298356 (3 pages) | Cited 1 time

Online Publication Date: 2 March 2010

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Self assembly of ligand-covered gold nanoparticles from water colloid solution on silicon dioxide substrate, modified, and patterned by low energy electron beam, has been observed. High selective adhesion of Au-nanoparticles on hydrophobic regions of wettability patterning was discovered and has been explained within the framework of the classical thermodynamic theory of particle adhesion on a substrate immersed into the colloid solution. The Au-nanoparticles patterns were imaged using confocal microscopy. Our results indicate that the developed technique may be considered as high resolution and environmentally clean technology for nanoparticles adhesion for metal nanoelectrode deposition, development of biosensor arrays, and nanophotonic devices.
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81.16.Rf Micro- and nanoscale pattern formation
68.08.Bc Wetting
68.35.Np Adhesion
81.16.Dn Self-assembly

Electrical bistability and negative differential resistance in single Sb-doped ZnO nanobelts/SiOx/p-Si heterostructured devices

Ya Yang, Junjie Qi, Wen Guo, Zi Qin, and Yue Zhang

Appl. Phys. Lett. 96, 093107 (2010); http://dx.doi.org/10.1063/1.3339873 (3 pages) | Cited 7 times

Online Publication Date: 2 March 2010

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We report the electrical bistability and negative differential resistance (NDR) in single Sb-doped ZnO nanobelts/SiOx/p-type Si heterostructured devices. The current-voltage (I-V) characteristics of the devices were discussed in terms of the energy band diagram of the devices. The origin of the electrical bistability and NDR is suggested to be associated with the electric-field-induced charge transfer. The performance of the fabricated devices can be enhanced under the ultraviolet light illumination.
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85.30.De Semiconductor-device characterization, design, and modeling

Current-induced phase transition in ballistic Ni nanocontacts

R. G. Gatiyatov, V. N. Lisin, and A. A. Bukharaev

Appl. Phys. Lett. 96, 093108 (2010); http://dx.doi.org/10.1063/1.3350896 (3 pages) | Cited 1 time

Online Publication Date: 3 March 2010

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Local phase transition from ferromagnetic to paramagnetic state in the region of the ballistic Ni nanocontacts (NCs) has been experimentally observed. We found that contact size reduction leads to an increase in the bias voltage at which the local phase transition occurs. Presented theoretical interpretation of this phenomenon takes into account the specificity of the local heating of the ballistic NC and describes the electron’s energy relaxation dependences on the applied voltage. The experimental data are in good qualitative and quantitative agreement with the theory proposed.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
73.63.Rt Nanoscale contacts
73.23.Ad Ballistic transport
81.40.Gh Other heat and thermomechanical treatments

Multiferroic GaN nanofilms grown within Na-4 mica channels

Santanu Bhattacharya, A. Datta, and D. Chakravorty

Appl. Phys. Lett. 96, 093109 (2010); http://dx.doi.org/10.1063/1.3340897 (3 pages) | Cited 10 times

Online Publication Date: 3 March 2010

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Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.
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81.16.-c Methods of micro- and nanofabrication and processing
75.80.+q Magnetomechanical effects, magnetostriction
77.22.Ch Permittivity (dielectric function)
75.85.+t Magnetoelectric effects, multiferroics
75.50.Pp Magnetic semiconductors
77.80.-e Ferroelectricity and antiferroelectricity

Compensation between magnetoresistance and switching current in Co/Cu/Co spin valve pillar structure

K. W. Cheng, C. Yu, L. K. Lin, Y. D. Yao, Y. Liou, J. H. Huang, and S. F. Lee

Appl. Phys. Lett. 96, 093110 (2010); http://dx.doi.org/10.1063/1.3343059 (3 pages) | Cited 1 time

Online Publication Date: 4 March 2010

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We examine the effects of modifying the Co hard layer thickness of Co/Cu/Co spin valve submicron pillars with current flowing perpendicular to the plane. The magnetoresistance (MR) ratios and switching currents show complementary behaviors. As the Co hard layer thickness is increased, the MR ratio shows an initial increase with a peak around 21 nm. The critical switching current shows a dip around the same thickness, which is close to the spin diffusion length. The product of the MR ratio and critical current density is about a constant independent of the Co hard layer thickness. Thus, we provide an approach to achieving maximum efficiency (MR ratio) and minimum consumption (critical current) for a practical device.
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75.47.De Giant magnetoresistance
75.76.+j Spin transport effects
75.60.-d Domain effects, magnetization curves, and hysteresis
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.30.Ds Spin waves

A level set based approach for modeling oxidation processes of ligand stabilized metallic nanoparticles

A. Auge, A. Weddemann, B. Vogel, F. Wittbracht, and A. Hütten

Appl. Phys. Lett. 96, 093111 (2010); http://dx.doi.org/10.1063/1.3353957 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2010

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The oxidation behavior of metallic nanoparticles is investigated in respect to ligand influences. The nanoparticle oxidation is modeled in a shell-core approach. The shell represents oxidation of surface atoms modeled by Johnson–Mehl–Avrami–Kolmogorov equations for isothermal growth. The oxidation of the nanoparticle core is described by a model introduced by Cabrera and Mott [Rep. Prog. Phys. 12, 163 (1949)] . In order to investigate the ligand influence one single parameter is introduced for both surface and bulk oxidation. The growth of the oxide layer is simulated in a level set framework via finite element methods. The theoretical results are compared to experimental findings of Kanninen et al. [J. Coll. Interf. Sci. 318, 88 (2008)] .
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81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.Pr Micro- and nano-oxidation
64.70.-p Specific phase transitions
02.70.Dh Finite-element and Galerkin methods

Single-photon emission from InGaAs quantum dots grown on (111) GaAs

Erik Stock, Till Warming, Irina Ostapenko, Sven Rodt, Andrei Schliwa, Jan Amaru Töfflinger, Anatol Lochmann, Aleksandr I. Toropov, Sergej A. Moshchenko, Dimitry V. Dmitriev, Vladimir A. Haisler, and Dieter Bimberg

Appl. Phys. Lett. 96, 093112 (2010); http://dx.doi.org/10.1063/1.3337097 (3 pages) | Cited 15 times

Online Publication Date: 4 March 2010

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In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤ 40 μeV down to the determination limit of our setup (10 μeV) was observed.
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78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
71.35.-y Excitons and related phenomena

Heterotwin formation during growth of nanolayered Al-TiN composites

Dhriti Bhattacharyya, Xiang-Yang Liu, Arda Genc, Hamish L. Fraser, Richard G. Hoagland, and Amit Misra

Appl. Phys. Lett. 96, 093113 (2010); http://dx.doi.org/10.1063/1.3330889 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2010

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High stacking fault energy (SFE) materials such as Al do not form twins easily. Here, the authors report, through high-resolution transmission electron microscopy, that Al layers in an alternating Al/TiN composite grow in a twin relationship to both the TiN and the underlying Al layers. Density functional theory based ab initio modeling reveals that nitrogen termination in the {111} growth plane of the TiN layers greatly favors the growth of twin oriented Al layers on them. This finding provides a definite way of creating a twin-modulated structure in high SFE materials.
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81.16.-c Methods of micro- and nanofabrication and processing

Engineering directed excitonic energy transfer

Alejandro Perdomo, Leslie Vogt, Ali Najmaie, and Alan Aspuru-Guzik

Appl. Phys. Lett. 96, 093114 (2010); http://dx.doi.org/10.1063/1.3323108 (3 pages) | Cited 10 times

Online Publication Date: 4 March 2010

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We provide an intuitive platform for engineering exciton transfer dynamics. We show that careful consideration of the spectral density, which describes the system-bath interaction, leads to opportunities to engineer exciton transfer. Since excitons in nanostructures are proposed for use in quantum information processing and artificial photosynthetic designs, our approach paves the way for engineering a wide range of desired exciton dynamics. We carefully describe the validity of the model and use experimentally relevant material parameters to show counter-intuitive examples of directed exciton transfer in a linear chain of quantum dots.
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71.35.-y Excitons and related phenomena
73.22.Lp Collective excitations
78.67.Hc Quantum dots

Nucleation and growth of nickel nanoclusters on graphene Moiré on Rh(111)

M. Sicot, S. Bouvron, O. Zander, U. Rüdiger, Yu. S. Dedkov, and M. Fonin

Appl. Phys. Lett. 96, 093115 (2010); http://dx.doi.org/10.1063/1.3341176 (3 pages) | Cited 22 times

Online Publication Date: 4 March 2010

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See Also: Erratum

Show Abstract
Regularly sized Ni nanoclusters (NCs) have been grown on a graphene Moiré on Rh(111). Using scanning tunneling microscopy, we determine that initial growth of Ni at 150 K leads to preferential nucleation of monodispersed NCs at specific sites of the Moiré superstructure. However, a defined long-range ordering of NCs with increasing coverage is not observed. Room temperature Ni deposition leads to the formation of flat triangular-shaped islands which are well-matched to the Moiré registry.
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81.07.Bc Nanocrystalline materials
64.60.Q- Nucleation
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

As doping of Si-based low-dimensional systems

F. Ruffino, M. V. Tomasello, M. Miritello, G. Nicotra, C. Spinella, and M. G. Grimaldi

Appl. Phys. Lett. 96, 093116 (2010); http://dx.doi.org/10.1063/1.3353987 (3 pages) | Cited 1 time

Online Publication Date: 5 March 2010

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In this work we studied the As redistribution in SiO2(70 nm)/Si(30 nm)/SiO2(70 nm) multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2/Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2.
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61.72.U- Doping and impurity implantation
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.65.Ac Multilayers
61.72.Cc Kinetics of defect formation and annealing
61.72.Mm Grain and twin boundaries
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