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1 Mar 2010

Volume 96, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 96, 091102 (2010); http://dx.doi.org/10.1063/1.3332591 (3 pages)

A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, et al.
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Solution-processed bulk heterojunction photovoltaic devices based on poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene-multiwalled carbon nanotubes/PbSe quantum dots bilayer

Yiyu Feng, Daqin Yun, Xuequan Zhang, and Wei Feng

Appl. Phys. Lett. 96, 093301 (2010); http://dx.doi.org/10.1063/1.3337100 (3 pages) | Cited 3 times

Online Publication Date: 1 March 2010

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A solution-processed bulk heterojuction photovoltaic cell was fabricated based on poly[(2-methoxy,5-octoxy)-1,4-phenylenevinylene](MOPPV)-multiwalled carbon nanotubes (MWNT)/spherical PbSe quantum dots bilayer. Surface morphology shows the interpenetrating network of well-dispersed MWNT in MOPPV matrix. Blueshifted band in absorption and photoluminescence spectra indicate the strong electron interaction between MWNT and MOPPV. A marked twofold increase in short-circuit current (1.71 mA/cm2) and power-conversion efficiency (0.40%) of ITO/MOPPV-MWNT:phenyl-C61-butyric acid methyl ester (PCBM)/PbSe/Al devices was achieved compared with that without MWNT. Results indicate that the enhanced performance was contributed by high photocurrent due to efficient exciton dissociation, charge transfer, and mobility in MWNT pathway.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
73.63.Kv Quantum dots
84.60.Jt Photoelectric conversion
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High response deep ultraviolet organic photodetector with spectrum peak focused on 280 nm

Shuang-hong Wu, Wen-lian Li, Bei Chu, C S Lee, Zi-sheng Su, Jun-bo Wang, Fei Yan, Guang Zhang, Zhi-zhi Hu, and Zhi-qiang Zhang

Appl. Phys. Lett. 96, 093302 (2010); http://dx.doi.org/10.1063/1.3327833 (3 pages) | Cited 13 times

Online Publication Date: 1 March 2010

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A high response organic deep ultraviolet (DUV) photodetector (PD) with 280 nm as the response spectrum peak was demonstrated. A maximum photoresponse of 309 mA/W under 280 nm UV illumination with an intensity of 0.428 mW/cm2 and a detectivity of 1×1012 cmHz1/2/W at −8 V were achieved, respectively. The optimized PD diode has a structure of ITO/m-MTDATA (10 nm)/m-MTDATA:Bphen(1:1, 60 nm)/Bphen (10 nm)/Cs2CO3: Bphen (30 wt %,10 nm)/Al(12 nm)/TPD(40 nm). Under 280 nm constant and shuttered illumination conditions with an intensity of 0.18 mW/cm2 the operational time is longer than 440 min when its response respectively decreases to 50% and 83% of its original value. The realization of the DUV detection is attributed to the stronger absorption of shorter UV wavelengths of Bphen acceptor and covering UV waveband longer than 300 nm by the TPD layer. The more detailed mechanism of harvesting the high PD performance is also discussed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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Band gap states of copper phthalocyanine thin films induced by nitrogen exposure

Tomoki Sueyoshi, Haruya Kakuta, Masaki Ono, Kazuyuki Sakamoto, Satoshi Kera, and Nobuo Ueno

Appl. Phys. Lett. 96, 093303 (2010); http://dx.doi.org/10.1063/1.3332577 (3 pages) | Cited 16 times

Online Publication Date: 3 March 2010

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The impact of 1 atm N2 gas exposure on the electronic states of copper phthalocyanine thin films was investigated using ultrahigh-sensitivity ultraviolet photoelectron spectroscopy. The highest occupied molecular orbital band of the film showed a drastic reversible change in the bandwidth and band shape as well as in the energy position upon repeated cycles of N2 exposure and subsequent annealing. Furthermore, two types of gap-state densities with Gaussian and exponential distributions appeared after the exposure and disappeared due to the annealing. These changes are ascribed to a weak disorder in the molecular packing structure induced by N2 diffusion into the film.
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71.20.Rv Polymers and organic compounds
79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.40.Gh Other heat and thermomechanical treatments
02.50.Ng Distribution theory and Monte Carlo studies
66.30.-h Diffusion in solids
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Influence of the hole blocking layer on blue phosphorescent organic light-emitting devices using 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole as host material

Nico Seidler, Sebastian Reineke, Karsten Walzer, Björn Lüssem, Ausra Tomkeviciene, Juozas V. Grazulevicius, and Karl Leo

Appl. Phys. Lett. 96, 093304 (2010); http://dx.doi.org/10.1063/1.3350890 (3 pages) | Cited 17 times

Online Publication Date: 4 March 2010

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Organic blue light-emitting devices are essential for the development of future light sources and display technology. Here, we present a highly efficient host-guest system suitable for blue light emission, consisting of the wide gap host material 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole (TCz1) and the phosphorescent blue emitter iridium(III)bis[(4,6-difluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic). We investigate charge carrier balance as a function of hole blocking layer thickness. For optimized structures, devices with a quantum efficiency as high as 14.3% and a luminous efficacy of 21 lm/W at a luminance of 1000 cd/m2 are realized.
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85.60.Jb Light-emitting devices
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