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27 Dec 2010

Volume 97, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 263701 (2010); http://dx.doi.org/10.1063/1.3530124 (3 pages)

Shu-Hsien Liao, Kai-Wen Huang, Hong-Chang Yang, Chang-Te Yen, M. J. Chen, Hsin-Hsien Chen, Herng-Er Horng, and Shieh Yueh Yang
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Saturation of absorption in noble metal doped nanocomposite glass film excited by evanescent light field

Costantino Corbari, Martynas Beresna, and Peter G. Kazansky

Appl. Phys. Lett. 97, 261101 (2010); http://dx.doi.org/10.1063/1.3529950 (3 pages)

Online Publication Date: 28 December 2010

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A leaky-waveguide configuration is proposed for saturable absorbers. Evanescent field interaction between the leaky-mode and the absorber layer reduces material degradation at high power levels while providing control over the interaction length and thus the modulation strength and nonsaturable losses simply by tuning the coupling angle around the resonance of the leaky-mode. This concept was applied to a sol-gel silicon-dioxide glass film doped with gold nanoparticles. Saturation of the surface plasmon resonance absorption was demonstrated with modulation depths of up to 34% achieved.
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73.22.Lp Collective excitations
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Excitation of surface field cavity and coherence of electromagnetic field scattering on two-dimensional cylindrical lattice

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and M. Thumm

Appl. Phys. Lett. 97, 261102 (2010); http://dx.doi.org/10.1063/1.3529953 (3 pages)

Online Publication Date: 28 December 2010

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The excitation of a surface field cavity based on a large area two-dimensional cylindrical lattice and surface field scattering within the cavity are investigated. It is shown that the interaction between surface and volume fields via distributed scatterers becomes coherent and the cavity excitation takes place only when it is irradiated with a near cut-off transverse-magnetic polarized field. The coherence of the radiation observed from the surface field scattering is investigated.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang

Appl. Phys. Lett. 97, 261103 (2010); http://dx.doi.org/10.1063/1.3531753 (3 pages) | Cited 12 times

Online Publication Date: 28 December 2010

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A graded-composition electron blocking layer (GEBL) with aluminum composition increasing along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) by employing the band-engineering. The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited lower forward voltage and series resistance and much higher output power at high current density as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/cm2.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Experimental analysis of internal optical losses in polarization-insensitive semiconductor optical amplifiers

Shinsuke Tanaka and Ken Morito

Appl. Phys. Lett. 97, 261104 (2010); http://dx.doi.org/10.1063/1.3531956 (3 pages)

Online Publication Date: 28 December 2010

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We experimentally investigated the internal optical loss of a polarization-insensitive multiple quantum well semiconductor optical amplifier (SOA) over a wide injection current range. The precise fitting of noise figure spectra using gain spectra and transparent wavelengths enabled a direct estimation of internal optical loss inside gain bandwidth. The internal optical loss of the SOA exhibited large dependencies on injection current and the optical confinement factor of the active layer. A large difference in optical losses between polarization modes and operating wavelengths of the SOA indicates a strong influence of intervalence band absorption.
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42.55.Px Semiconductor lasers; laser diodes

Three-dimensional microcoils as terahertz metamaterial with electric and magnetic response

Stefan Waselikowski, Kai Kratt, Vlad Badilita, Ulrike Wallrabe, Jan G. Korvink, and Markus Walther

Appl. Phys. Lett. 97, 261105 (2010); http://dx.doi.org/10.1063/1.3530435 (3 pages)

Online Publication Date: 28 December 2010

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A metamaterial consisting of three-dimensional submillimeter solenoidal coils is presented. The structures have been fabricated by an automated wire-bonding technique and are characterized by terahertz time-domain spectroscopy and numerical simulations. We demonstrate the excitation of electric and magnetic resonances in the microcoils at frequencies between 0.05 and 0.6 THz. The implementation of these microstructures provides a promising route for the design of nonplanar and intrinsically chiral metamaterials for gigahertz to terahertz frequencies.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
84.32.Hh Inductors and coils; wiring
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

Tillmann Kubis, Saumitra Raj Mehrotra, and Gerhard Klimeck

Appl. Phys. Lett. 97, 261106 (2010); http://dx.doi.org/10.1063/1.3524197 (3 pages) | Cited 2 times

Online Publication Date: 28 December 2010

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Conceptual disadvantages of typical resonant phonon terahertz quantum cascade lasers (THz-QCLs) are analyzed. Alternative designs and their combination within a concrete device proposal are discussed to improve the QCL performance. The improvements are (1) indirect pumping of the upper laser level, (2) diagonal optical transitions, (3) complete electron thermalization, and (4) materials with low effective electron masses. The nonequilibrium Green’s function method is applied to predict stationary electron transport and optical gain. The proposed THz-QCL shows a higher optical gain, a lower threshold current, and a higher operation temperature. Alloy disorder scattering can worsen the QCL performance.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.15.Eq Optical system design

Scattering focusing and localized surface plasmons in a single Ag nanoring

Qing Zhang, Xin-Yan Shan, Li Zhou, Tian-Rong Zhan, Chun-Xiao Wang, Min Li, Jin-Feng Jia, Jian Zi, Qu-Quan Wang, and Qi-Kun Xue

Appl. Phys. Lett. 97, 261107 (2010); http://dx.doi.org/10.1063/1.3532113 (3 pages)

Online Publication Date: 29 December 2010

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We investigate the far-field scattering property of a single Ag nanoring. Under oblique excitation, two-focus scatterings with distinct intensities were observed. We show that the two-focus scatterings result from the interference of far-field scattering light from the ring circumference, and the local field enhancement effect of surface plasmons plays the key role in the focus intensity. By finite difference time domain and numerical integer methods, we calculated far-field scattering and surface plasmons’ distributions, and the results are in good agreement with the experiment.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
73.22.Lp Collective excitations

Characterizing ultrashort optical pulses using second-order nonlinear nanoprobes

Haifeng Li, Zhe Zhang, Qian Xu, Kebin Shi, Yaoshun Jia, Baigang Zhang, Yong Xu, and Zhiwen Liu

Appl. Phys. Lett. 97, 261108 (2010); http://dx.doi.org/10.1063/1.3532112 (3 pages)

Online Publication Date: 29 December 2010

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We report a second-order nonlinear nanoprobe for characterizing ultrafast optical near fields. The proposed nanoprobe comprises second harmonic nanocrystals attached to a carbon nanotube, which is in turn attached to a silica fiber taper. We demonstrate in situ pulse characterization directly in the air core of a photonic crystal fiber. Further, it is shown that nanoprobes containing a single nanocrystal in the tip of the nanotube can be fabricated by auxiliary focused ion beam nanomilling. These results indicate that the proposed nanoprobe can open an avenue for probing the evolution of ultrafast optical fields in complex three-dimensional micro- or nanostructures.
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42.65.-k Nonlinear optics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Waveguiding-assisted random lasing in epitaxial ZnO thin film

P.-H. Dupont, C. Couteau, D. J. Rogers, F. Hosseini Téhérani, and G. Lérondel

Appl. Phys. Lett. 97, 261109 (2010); http://dx.doi.org/10.1063/1.3527087 (3 pages) | Cited 2 times

Online Publication Date: 29 December 2010

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Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a three-dimensional configuration of disordered scattering elements was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly formed closed-loops acting as lasing cavities.
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78.66.Hf II-VI semiconductors
68.55.ag Semiconductors
81.15.Fg Pulsed laser ablation deposition
78.45.+h Stimulated emission
81.05.Dz II-VI semiconductors
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Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP

Christoph Deutsch, Alexander Benz, Hermann Detz, Pavel Klang, Michele Nobile, Aaron Maxwell Andrews, Werner Schrenk, Tillmann Kubis, Peter Vogl, Gottfried Strasser, and Karl Unterrainer

Appl. Phys. Lett. 97, 261110 (2010); http://dx.doi.org/10.1063/1.3532106 (3 pages) | Cited 1 time

Online Publication Date: 29 December 2010

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We report the demonstration of a terahertz quantum cascade laser based on the In0.53Ga0.47As/GaAs0.51Sb0.49 type II material system. The combination of low effective electron masses and a moderate conduction band offset makes this material system highly suitable for such devices. The active region is a three-well phonon depopulation design and laser ridges have been processed in a double-metal waveguide configuration. The devices exhibit a threshold current density of 2 kA/cm2, provide peak optical powers of 1.8 mW, and operate up to 102 K. Emission frequencies are in the range between 3.6 and 4.2 THz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Transmission properties of surface plasmon polaritons and localized resonance in semiconductor hole arrays

T. Okada, S. Tsuji, K. Tanaka, K. Hirao, and K. Tanaka

Appl. Phys. Lett. 97, 261111 (2010); http://dx.doi.org/10.1063/1.3532111 (3 pages)

Online Publication Date: 29 December 2010

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We study optical modulated transmission in semiconductor hole arrays using terahertz time-domain measurements in combination with the optical pump-terahertz probe technique. When the density of photoexcited carriers is varied, we observe an evanescent decay profile for the propagation of surface plasmon polaritons, whereas steady behavior is exhibited for transmission attributed to the localized resonance in the holes. We also demonstrate an optically controlled transition of the transmission mechanism, attributed to the change from a dielectric structure to a plasmonic material.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.70.Gq Microwave and radio-frequency interactions
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Optimum areal coverage for perfect transmission in a periodic metal hole array

J. W. Lee, T. H. Park, Peter Nordlander, and Daniel M. Mittleman

Appl. Phys. Lett. 97, 261112 (2010); http://dx.doi.org/10.1063/1.3533658 (3 pages)

Online Publication Date: 30 December 2010

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We investigate the conditions for perfect transmission of terahertz radiation in periodic two-dimensional plasmonic system of square holes. Changing the period in the direction perpendicular to the incident light polarization reveals the optimum areal coverage for perfect transmission at a specific period. The simulated near-zone energy flow distributions show that all incident light is accumulated on the apertures, under the condition that the period is shorter than the resonant wavelength, acting as static local capacitors restricted to a wavelength-confined region. Our finding can be exploited for designing cost-effective terahertz filters and may be applicable to terahertz spectroscopy requiring strong local field enhancement.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Wc Optical coatings

Cavity-involved plasmonic metamaterial for optical polarization conversion

T. Li, S. M. Wang, J. X. Cao, H. Liu, and S. N. Zhu

Appl. Phys. Lett. 97, 261113 (2010); http://dx.doi.org/10.1063/1.3533912 (3 pages) | Cited 2 times

Online Publication Date: 30 December 2010

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We experimentally demonstrate a plasmonic assisted Fabry–Perot cavity in a metal/insulator/metal trilayer structure with L-shaped hole arrays inside, which significantly contribute to the mechanism to realize a nearly complete polarization conversion ( = 0.93) in optical transmissions at near-infrared wavelength. This interesting property is found arising from an overlap of the cavity and plasmonic modes in two orthogonal polarization states. This discovered physics remarkably endows this plasmonic metamaterial with good optical performance and looser fabrication requirement, not only indicating practical applications but also providing fruitful inspirations in future nanophotonic designs.
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73.22.Lp Collective excitations
78.68.+m Optical properties of surfaces
73.40.Rw Metal-insulator-metal structures
85.60.-q Optoelectronic devices
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The role of acceptance angle in measurements with ion energy analyzers: Study by numerical simulations

W. J. Miloch, N. Gulbrandsen, L. N. Mishra, and Å. Fredriksen

Appl. Phys. Lett. 97, 261501 (2010); http://dx.doi.org/10.1063/1.3531757 (3 pages)

Online Publication Date: 29 December 2010

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The importance of an acceptance angle in the plasma diagnostics with ion energy analyzers is investigated by means of numerical simulations. It is shown that wide acceptance angles result in low energy tails in measured ion distribution functions (IDFx). For flowing plasmas or plasmas with beams, the orientation of the analyzer’s orifice gives different results due to bending of ion trajectories in the vicinity of the analyzer. It is demonstrated that the maximum in the IDFx is at energies lower than the plasma potential. Simulations are done with DIP3D, a three-dimensional particle-in-cell code.
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52.25.Fi Transport properties
52.65.Rr Particle-in-cell method
52.70.-m Plasma diagnostic techniques and instrumentation
02.60.-x Numerical approximation and analysis
52.30.Cv Magnetohydrodynamics (including electron magnetohydrodynamics)
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Quasiparticle energies and uniaxial pressure effects on the properties of SnO2

R. Saniz, H. Dixit, D. Lamoen, and B. Partoens

Appl. Phys. Lett. 97, 261901 (2010); http://dx.doi.org/10.1063/1.3532109 (3 pages)

Online Publication Date: 28 December 2010

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We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter.
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71.20.Ps Other inorganic compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.35.-y Excitons and related phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Secondary electron yield of multiwalled carbon nanotubes

M. K. Alam, P. Yaghoobi, M. Chang, and A. Nojeh

Appl. Phys. Lett. 97, 261902 (2010); http://dx.doi.org/10.1063/1.3532851 (3 pages) | Cited 5 times

Online Publication Date: 28 December 2010

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Secondary electron yield from individual multiwalled carbon nanotubes is investigated for a wide range of primary beam energies (0.5–15 keV). By using a simple experimental procedure under an optical microscope, we make suspended nanotubes, which are free from interaction with the substrate during electron yield measurements. It is found that the secondary electron yield from isolated suspended nanotubes is less than unity and decreases as a function of primary electron energy.
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79.20.Uv Electron energy loss spectroscopy
78.67.Ch Nanotubes

Origin of the giant optical nonlinearity of Sb2Te3 phase change materials

Jing Liu, Shuang Liu, and Jingsong Wei

Appl. Phys. Lett. 97, 261903 (2010); http://dx.doi.org/10.1063/1.3530428 (3 pages) | Cited 2 times

Online Publication Date: 29 December 2010

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We report the giant optical nonlinear absorption and refraction of Sb2Te3 phase change materials at low laser irradiation intensities. The nonlinear absorption and refraction coefficients reach up to −6.63×10−2 m/W and 2.606×10−9 m2/W, respectively. The first principles calculation indicates that the giant nonlinear absorption stems from the band filling effect of the photon induced free carriers under laser irradiation. The band-gap shrinking results in a positive thermo-optic coefficient, thus the giant nonlinear refraction. The numerical results are generally correlated with the experimental findings from z-scan and temperature-variable ellipsometric measurements.
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42.65.-k Nonlinear optics
42.79.Wc Optical coatings
78.66.Li Other semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
71.15.-m Methods of electronic structure calculations

Effective method to identify the vacancies in crystalline GeTe

F. Tong, X. S. Miao, Y. Wu, Z. P. Chen, H. Tong, and X. M. Cheng

Appl. Phys. Lett. 97, 261904 (2010); http://dx.doi.org/10.1063/1.3531664 (3 pages)

Online Publication Date: 29 December 2010

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X-ray diffraction and photoelectron spectroscopy of different Co-doped concentration GeTe have been made to identify the vacancies in rock-salt GeTe. The results show that Co occupies germanium vacancy and forms Co–Te bond, but the alloy retains a rock-salt structure when the concentration of doped Co is less than the vacancy ratio in crystalline GeTe. If we construct 8% germanium vacancy and relative distortion in rock-salt GeTe, the magnetism calculation based on spin-polarized density functional theory of Co-doped GeTe agrees well with superconducting quantum interference device magnetometer result. From experiment and calculation results, we can confirm the existence of vacancies in rock-salt GeTe and the ratio is 8%.
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61.72.jd Vacancies
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Structural inhomogeneity and anelastic deformation in metallic glasses revealed by spherical nanoindentation

Y. Yang, J. F. Zeng, J. C. Ye, and J. Lu

Appl. Phys. Lett. 97, 261905 (2010); http://dx.doi.org/10.1063/1.3532968 (3 pages)

Online Publication Date: 29 December 2010

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In this letter, the anelastic deformation of a Zr-based metallic glass (MG) at ambient temperature is revealed through spherical nanoindentation. A general rheological model, which is linked with the atomic structure of MGs, is proposed to explain the observed anelasticity. The experimental and theoretical results clearly indicate the existence of structural inhomogeneity intrinsic to MGs, which causes the anelastic deformation upon mechanical loading under high loading rates before shear banding. The outcome of the current research provides an important insight into the property-structure relation of MGs.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations

Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Takuya Kawazu and Hiroyuki Sakaki

Appl. Phys. Lett. 97, 261906 (2010); http://dx.doi.org/10.1063/1.3533019 (3 pages) | Cited 1 time

Online Publication Date: 29 December 2010

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Optical properties of GaSb type-II quantum dots (QDs) in GaAs were studied and compared with a theoretical model to clarify how the spatial overlap of holes in the dot and electrons outside is affected by the interdiffusion of Sb and As. GaSb QDs were grown in a GaAs substrate by droplet epitaxy and annealed at the temperature Ta = 650–850 °C to induce the Sb/As intermixing. Photoluminescence (PL) studies showed that the integrated PL intensity I decreases to less than 1/10 as Ta is raised from 650 to 750 °C, while I increases by three orders of magnitude with the increase of Ta from 750 to 850 °C. This behavior is explained by the overlap Θ between electron and hole wave functions; in an initial stage of the interdiffusion, the mixing occurs only near the dot/matrix boundary, leading to the decrease in the overlap Θ, since electrons are more repelled by the dot. In later stages, however, the hole confinement and the electron repulsion in the dot both weaken, leading to the increase in the overlap Θ.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.55.Cr III-V semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.Cc Kinetics of defect formation and annealing

Dislocation movement in GaN films

M. A. Moram, T. C. Sadler, M. Häberlen, M. J. Kappers, and C. J. Humphreys

Appl. Phys. Lett. 97, 261907 (2010); http://dx.doi.org/10.1063/1.3532965 (3 pages) | Cited 7 times

Online Publication Date: 29 December 2010

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We demonstrate that significant dislocation movement occurs below the surface of heteroepitaxial c-plane GaN films during their growth by metalorganic vapor phase epitaxy. Dislocations move primarily by vacancy-assisted climb, which appears to be driven by the high in-plane biaxial stresses present during growth. Annealing low dislocation density (4.3×108 cm−2) GaN films promotes dislocation climb and thus reduces both dislocation densities and in-plane stresses (at high temperatures), independent of epilayer growth conditions.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.ag Semiconductors
61.72.Lk Linear defects: dislocations, disclinations
61.72.Cc Kinetics of defect formation and annealing

Surface-plasmon-induced enhancement of magneto-optical Kerr effect in all-nickel subwavelength nanogratings

A. A. Grunin, A. G. Zhdanov, A. A. Ezhov, E. A. Ganshina, and A. A. Fedyanin

Appl. Phys. Lett. 97, 261908 (2010); http://dx.doi.org/10.1063/1.3533260 (3 pages) | Cited 2 times

Online Publication Date: 30 December 2010

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Enhancement of transversal magneto-optical Kerr effect (TKE) is controlled experimentally in magnetoplasmonic subwavelength nanogratings made of nickel films by resonant excitation of surface plasmon-polaritons (SPPs). Almost one order of magnitude increase of the TKE value is observed in the spectral range of Wood’s anomaly corresponding to the fulfillment of the phase-matching conditions for SPP excitation.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.66.Bz Metals and metallic alloys
78.20.Ls Magneto-optical effects
42.65.-k Nonlinear optics
42.79.Dj Gratings

Performance enhancement of terahertz metamaterials on ultrathin substrates for sensing applications

Hu Tao, Andrew C. Strikwerda, Mengkun Liu, Jessica P. Mondia, Evren Ekmekci, Kebin Fan, David L. Kaplan, Willie J. Padilla, Xin Zhang, Richard D. Averitt, and Fiorenzo G. Omenetto

Appl. Phys. Lett. 97, 261909 (2010); http://dx.doi.org/10.1063/1.3533367 (3 pages) | Cited 2 times

Online Publication Date: 30 December 2010

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We design, fabricate, and characterize split-ring resonator (SRR) based planar terahertz metamaterials (MMs) on ultrathin silicon nitride substrates for biosensing applications. Proof-of-principle demonstration of increased sensitivity in thin substrate SRR-MMs is shown by detection of doped and undoped protein thin films (silk fibroin) of various thicknesses and by monitoring transmission changes using terahertz time-domain spectroscopy. SRR-MMs fabricated on thin film substrates show significantly better performance than identical SRR-MMs fabricated on bulk silicon substrates paving the way for improved biological and chemical sensing applications.
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42.82.Bq Design and performance testing of integrated-optical systems
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.70.-a Optical materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Wc Optical coatings
87.85.fk Biosensors

Ion-beam induced domain structure in piezoelectric PMN-PT single crystal

Kyou-Hyun Kim, David A. Payne, and Jian-Min Zuo

Appl. Phys. Lett. 97, 261910 (2010); http://dx.doi.org/10.1063/1.3533385 (3 pages)

Online Publication Date: 30 December 2010

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We report an investigation of the domain structure in Pb(Mg1/3Nb2/3)O3-30%PbTiO3 single crystals after ion milling. We show that ion milling induces microdomains, typically 0.1–1 μm in size. The induced microdomains disappear after temperature annealing or electric poling, leaving behind nanodomains of a few nanometers in size. We attribute the microdomains to surface stress induced by ion milling. The results demonstrate the general importance of separating sample preparation artifacts from the true domain structure in the study of ferroic materials.
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81.40.Gh Other heat and thermomechanical treatments
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.65.-j Piezoelectricity and electromechanical effects
61.80.Jh Ion radiation effects

Spontaneous formation of vertically anticorrelated epitaxial islands on ultrathin substrates

Y. Ni and L. H. He

Appl. Phys. Lett. 97, 261911 (2010); http://dx.doi.org/10.1063/1.3533667 (3 pages) | Cited 1 time

Online Publication Date: 30 December 2010

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Exploration of self-assembled epitaxial islands on ultrathin substrates opens a way for fabricating mechanoelectric heterostructures, while the effect of substrate thickness remains unclear. By using phase field simulations, we demonstrate spontaneous formation of a vertically anticorrelated quantum dot growth on the top and bottom surfaces of an ultrathin substrate. The mechanism of this vertical anticorrelation is due to the overlapping effect of the fringe elastic field modulated by the substrate thickness. Good agreements with the pattern of epitaxial islands on nanowire and nanomembrane are observed. The obtained result provides a guideline for tailoring the ordering of heteroepitaxial island growth.
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81.16.Dn Self-assembly
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth
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