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Applied Physics Letters / Volume 97 / Issue 1 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 013304 (2010); http://dx.doi.org/10.1063/1.3454774 (3 pages)

Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

Dong Ick Son1, Chan Ho You2, Jae Hun Jung2, and Tae Whan Kim1,2

1Department of Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea
2Department of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea

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(Received 24 December 2009; accepted 26 May 2010; published online 7 July 2010)

Organic bistable devices (OBDs) fabricated utilizing ZnO quantum dots (QDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated by using a spin-coating technique. Transmission electron microscopy images revealed that 5-nm-diameter ZnO QDs were formed inside the PMMA polymer layer. Current-voltage (I-V) measurements on Al/ZnO QDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBDs was as large as 4×104. Carrier transport mechanisms for the OBDs are described by using several models to fit the experimental I-V data.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier mobility, colloids, II-VI semiconductors, indium compounds, nanocomposites, organic-inorganic hybrid materials, polymers, random-access storage, semiconductor quantum dots, spin coating, tin compounds, zinc compounds

PACS

  • 84.30.Sk

    Pulse and digital circuits

  • 81.07.Pr

    Organic-inorganic hybrid nanostructures

  • 81.07.Ta

    Quantum dots

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 82.70.Dd

    Colloids

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3454774

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
I-V curves for an Al/ZnO QDs embedded in PMMA layer/ITO device. The scanning step of the applied voltage is 0.01V.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) The log-log plot of current as a function of the voltage for the Al/ZnO QDs embedded in PMMA layer/ITO devices, and the curves are fitted for SCLC mechanism. The inset represents the ln(I) vs V1/2 characteristics at lower voltages, and the curve is fitted for TE conduction mechanism. (b) FN plot for the OBDs with ZnO QDs-PMMA nanocomposites.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Schematic diagram of the energy band diagram corresponding to the carrier transport mechanisms of the hole and electron injection processes during the positive voltage for the Al/ZnO QDs embedded in PMMA layer/ITO devices. The HOMO and the LUMO represent the energy levels of the highest occupied molecular orbital and the lowest unoccupied molecular orbital of the PMMA, respectively. The Ec and Ev represent the conduction band edge and the valence band edge of the ZnO nanoparticles, respectively.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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