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Applied Physics Letters / Volume 97 / Issue 1 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 013305 (2010); http://dx.doi.org/10.1063/1.3456393 (3 pages)

Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell

J. C. Nolasco1, Antonio Sánchez-Díaz2, R. Cabré1, J. Ferré-Borrull1, L. F. Marsal1, E. Palomares2,3, and J. Pallarès1

1Departament d’Enginyeria Electrònica Elèctrica i Automàtica, Universitat Rovira i Virgili, Avda. Països Catalans 26, Tarragona 43007, Spain
2Institute of Chemical Research of Catalonia (ICIQ), Av. Països Catalans 16, Tarragona 43007, Spain
3Inst. Catalana de Recerca i Estudis Avançats (ICREA), Pas. Lluís Companys 23, Barcelona 08010, Spain

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(Received 6 April 2010; accepted 29 May 2010; published online 7 July 2010)

The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dark conductivity, fullerenes, organic compounds, solar cells

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456393

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Experimental (symbols) and fitted (solid line) dark J-V-T characteristics of the Pc/C60 diode at different temperatures. Inset: illuminated J-V-T characteristics of the Pc/C60 solar cell.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Temperature dependence of the ideality factor (n, square) and the modified reverse saturation current density (n×ln JS, star) for low voltages (empty symbols) and medium voltages (full symbols).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Experimental (symbol) and simulated (line) C-V characteristics of the Pc/C60 diode. The dotted lines represent the extrapolation of the C-V values in region I and region II.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Proposed energy band diagram for the Pc/C60 heterojunction in equilibrium.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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