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6 Sep 2010

Volume 97, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 101901 (2010); http://dx.doi.org/10.1063/1.3485084 (3 pages)

Phillip Vinten, Jacques Lefebvre, and Paul Finnie
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Polarization dependent two-photon properties in an organic crystal

Hong-Hua Fang, Jie Yang, Ran Ding, Qi-Dai Chen, Lei Wang, Hong Xia, Jing Feng, Yu-Guang Ma, and Hong-Bo Sun

Appl. Phys. Lett. 97, 101101 (2010); http://dx.doi.org/10.1063/1.3486683 (3 pages) | Cited 3 times

Online Publication Date: 7 September 2010

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The dependence of the fluorescence on the excitation beam polarization under two-photon excitation was studied in a 1,4-bis(R-cyano-4-diphenylaminostyryl)-2,5-diphenylbenzene organic crystal. The crystal shows strong response to the polarization, especially when the pump intensity was increased. The polarization plays an important role on the threshold of amplified spontaneous emission (ASE) and the ΔGASE under two-photon excitation (TPE). Moreover, the polarization distribution between the TPE (800 nm) and one-photon excitation (400 nm) are very different. The former generates a cos4 θ distribution, while the later gives rise to cos2 θ distribution in different orientation.
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78.55.Kz Solid organic materials
78.45.+h Stimulated emission

Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system

Jun Pan, Yijie Huo, Sunil Sandhu, Norbert Stuhrmann, Michelle L. Povinelli, James S. Harris, M. M. Fejer, and Shanhui Fan

Appl. Phys. Lett. 97, 101102 (2010); http://dx.doi.org/10.1063/1.3486686 (3 pages) | Cited 9 times

Online Publication Date: 7 September 2010

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We experimentally demonstrated that the characteristics of the coherent interaction between two waveguide-coupled resonators can be drastically tuned by changing the propagation phase in the waveguide. In particular, the transmission line shape can be tuned between an electromagnetically induced transparency like optical resonance and a flat-top reflection filter.
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42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials

Analytical technique for subwavelength far field imaging

S. Thongrattanasiri, N. A. Kuhta, M. D. Escarra, A. J. Hoffman, C. F. Gmachl, and V. A. Podolskiy

Appl. Phys. Lett. 97, 101103 (2010); http://dx.doi.org/10.1063/1.3487779 (3 pages)

Online Publication Date: 7 September 2010

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We develop an analytical technique for retrieving the size and shape of subwavelength objects using far-field measurements. The approach relies on subwavelength diffraction gratings scattering evanescent information into the far field along with a numerical algorithm that is capable of deconvoluting this information based on the far-field intensity measurements. Several examples are presented, demonstrating resolution on the order of λ0/20. The developed method can be used at any frequency range, and may become a practical alternative to scanning near-field microscopy.
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07.60.Pb Conventional optical microscopes
42.30.Va Image forming and processing
02.60.-x Numerical approximation and analysis

Physical origin of the third order nonlinear optical response of orthogonal pyrrolo-tetrathiafulvalene derivatives

K. Iliopoulos, R. Czaplicki, H. El Ouazzani, J. Y. Balandier, M. Chas, S. Goeb, M. Sallé, D. Gindre, and B. Sahraoui

Appl. Phys. Lett. 97, 101104 (2010); http://dx.doi.org/10.1063/1.3482943 (3 pages) | Cited 6 times

Online Publication Date: 7 September 2010

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We present the third order nonlinear optical study of tetrathiafulvalene-based molecular corners. Degenerate four-wave mixing measurements have been done to provide information about the magnitude and the origin of the nonlinearity, while the nonlinear absorption has been separately measured by performing “open aperture” Z-scan measurements. The response has been found to be strongly dependent upon the structure of the molecular corners.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Stabilization of a passively mode-locked laser by continuous wave optical injection

Natalia Rebrova, Tatiana Habruseva, Guillaume Huyet, and Stephen P. Hegarty

Appl. Phys. Lett. 97, 101105 (2010); http://dx.doi.org/10.1063/1.3483231 (3 pages) | Cited 2 times

Online Publication Date: 7 September 2010

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We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Modulated surface textures for enhanced light trapping in thin-film silicon solar cells

Olindo Isabella, Janez Krč, and Miro Zeman

Appl. Phys. Lett. 97, 101106 (2010); http://dx.doi.org/10.1063/1.3488023 (3 pages) | Cited 15 times

Online Publication Date: 8 September 2010

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Substrates with a modulated surface texture were prepared by combining different interface morphologies. The spatial frequency surface representation method is used to evaluate the surface modulation. When combining morphologies with appropriate geometrical features, substrates exhibit an increased scattering level in a broad wavelength region. We demonstrate that the improved scattering properties result from a superposition of different light scattering mechanisms caused by the different geometrical features integrated in a modulated surface texture.
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88.40.jj Silicon solar cells
68.55.jm Texture

Multiple growths of epitaxial lift-off solar cells from a single InP substrate

Kyusang Lee, Kuen-Ting Shiu, Jeramy D. Zimmerman, Christopher K. Renshaw, and Stephen R. Forrest

Appl. Phys. Lett. 97, 101107 (2010); http://dx.doi.org/10.1063/1.3479906 (3 pages) | Cited 6 times

Online Publication Date: 8 September 2010

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We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of ηp = 14.4±0.4% and ηp = 14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.
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88.40.jm Thin film III-V and II-VI based solar cells
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.65.Cf Surface cleaning, etching, patterning
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
85.30.Kk Junction diodes

Whispering gallery mode lasing in electrically driven quantum dot micropillars

F. Albert, T. Braun, T. Heindel, C. Schneider, S. Reitzenstein, S. Höfling, L. Worschech, and A. Forchel

Appl. Phys. Lett. 97, 101108 (2010); http://dx.doi.org/10.1063/1.3488807 (3 pages) | Cited 5 times

Online Publication Date: 10 September 2010

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We report on whispering gallery mode lasing in electrically driven quantum dot micropillar cavities. The high quality microcavity structures feature whispering gallery mode emission with Q-factors up to 40 000 and laser threshold currents below 10 μA for devices with diameters between 2.6 and 5.6 μm. For large diameter micropillars a coexistence of lasing from two whispering gallery modes is realized which could be the basis for efficient terahertz generation via difference frequency generation.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
42.50.-p Quantum optics
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Recovery of gas density in a nitrogen gap after breakdown

Xinjing Cai, Xiaobing Zou, Xinxin Wang, Liming Wang, Zhicheng Guan, and Weihua Jiang

Appl. Phys. Lett. 97, 101501 (2010); http://dx.doi.org/10.1063/1.3488016 (3 pages)

Online Publication Date: 8 September 2010

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The recovery of the gas density and the hold-off voltage of a spark gap after breakdown were investigated with Mach–Zehnder interferometry and two-pulse method, respectively. It was shown that the gas density in a 2.7 mm gap filled with atmospheric nitrogen almost fully recovers at t = 50 ms but the breakdown voltage of the gap only recovers to its static hold-off voltage, about 21.4% of its original overvolted breakdown voltage. The mechanisms for the delayed recovery of the ability to be overvolted were discussed.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.70.-m Plasma diagnostic techniques and instrumentation

Ion wake effects on the Coulomb ion drag in complex dusty plasmas

Dae-Han Ki and Young-Dae Jung

Appl. Phys. Lett. 97, 101502 (2010); http://dx.doi.org/10.1063/1.3488816 (3 pages)

Online Publication Date: 9 September 2010

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The ion wake effects on the Coulomb drag force are investigated in complex dusty plasmas. It is shown that the ion wake effects significantly enhance the Coulomb ion drag force. It is also found that the ion wake effects on the Coulomb drag force increase with an increase in the Debye length. In addition, the ion wake effects on the momentum transfer cross section and Coulomb drag force are found to be increased with increasing thermal Mach number, i.e., decreasing plasma temperature. It is also found that the Coulomb ion drag force would be stronger for smaller dust grains.
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52.27.Lw Dusty or complex plasmas; plasma crystals
52.30.-q Plasma dynamics and flow

An L-band coaxial relativistic backward wave oscillator with mechanical frequency tunability

Xingjun Ge, Huihuang Zhong, Baoliang Qian, Jun Zhang, Liang Gao, Zhenxing Jin, Yuwei Fan, and Jianhua Yang

Appl. Phys. Lett. 97, 101503 (2010); http://dx.doi.org/10.1063/1.3488353 (3 pages) | Cited 13 times

Online Publication Date: 10 September 2010

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The initial experimental results of an L-band coaxial relativistic backward wave oscillator with mechanical frequency tunability are presented. The key effects of the inner-conductor contributing to the mechanical frequency tunability are investigated theoretically and experimentally. In the experiments, the L-band microwave with frequency of 1.58 GHz is radiated when the inner-conductor radius is 1.5 cm. Meanwhile, the S-band microwave with frequency of 2.31 GHz is generated after removing the inner-conductor. In addition, the frequency tuning within 4% is realized by mechanically altering the radius of the inner-conductor at a half power level.
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84.40.Dc Microwave circuits
84.30.Ng Oscillators, pulse generators, and function generators
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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Visible iridescence from self-assembled periodic rippling in vertically aligned carbon nanotube forests

Phillip Vinten, Jacques Lefebvre, and Paul Finnie

Appl. Phys. Lett. 97, 101901 (2010); http://dx.doi.org/10.1063/1.3485084 (3 pages) | Cited 2 times

Online Publication Date: 7 September 2010

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We observe iridescence in the form of spectrally dispersed white light reflected from the structured sidewalls of vertically aligned carbon nanotube forests. The iridescence is a result of diffraction from a self-assembled periodic rippling pattern on the forest sidewalls that acts as a reflection grating. We measure the grating spacing via white light and laser diffraction experiments and see good agreement with the spacing of the rippling pattern as measured via scanning electron microscopy. The periodic rippling pattern self-assembles during chemical vapor deposition growth of the forests.
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81.16.Dn Self-assembly
78.40.Ri Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.De Nanotubes
78.67.Ch Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems

Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates

Yeonwoo Seo and Chinkyo Kim

Appl. Phys. Lett. 97, 101902 (2010); http://dx.doi.org/10.1063/1.3488022 (3 pages) | Cited 2 times

Online Publication Date: 8 September 2010

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m-oriented GaN faceted-domains were grown on SiO2-patterned m-plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m-oriented GaN faceted-domains along the c-direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c-direction is energetically not favored until the domain reaches a critical size.
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68.55.ag Semiconductors
68.55.J- Morphology of films

Diameter dependence of SiGe nanowire thermal conductivity

Zhao Wang and Natalio Mingo

Appl. Phys. Lett. 97, 101903 (2010); http://dx.doi.org/10.1063/1.3486171 (3 pages) | Cited 9 times

Online Publication Date: 8 September 2010

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We theoretically compute the thermal conductivity of SiGe alloy nanowires as a function of nanowire diameter, alloy concentration, and temperature, obtaining a satisfactory quantitative agreement with experimental results. Our results account for the weaker diameter dependence of the thermal conductivity recently observed in Si1−xGex nanowires (x<0.1), as compared to pure Si nanowires. We also present calculations in the full range of alloy concentrations, 0 ≤ x ≤ 1, which may serve as a basis for comparison with future experiments on high alloy concentration nanowires.
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66.70.Df Metals, alloys, and semiconductors

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser

Appl. Phys. Lett. 97, 101904 (2010); http://dx.doi.org/10.1063/1.3487935 (3 pages) | Cited 2 times

Online Publication Date: 9 September 2010

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GaxIn1−xN quantum wells grown by metal organic vapor phase epitaxy on a plane GaN grown on r plane sapphire substrate typically show relatively large surface pits. We show by correlation of low temperature photoluminescence, cathodoluminescence, scanning and transmission electron microscopy that the different semipolar side facets of these pits dominate the overall luminescence signal of such layers.
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78.60.Hk Cathodoluminescence, ionoluminescence
68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth

Optical transitions between Landau levels: AA-stacked bilayer graphene

Yen-Hung Ho, Jhao-Ying Wu, Rong-Bin Chen, Yu-Huang Chiu, and Ming-Fa Lin

Appl. Phys. Lett. 97, 101905 (2010); http://dx.doi.org/10.1063/1.3488806 (3 pages) | Cited 8 times

Online Publication Date: 9 September 2010

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The magneto-optical absorption spectra of AA-stacked bilayer graphene (AABG) exhibit two kinds of absorption peaks resulting from two groups of Landau levels (LLs). Only intragroup excitations that follow a single selection rule take place. The excitation channels are altered as the field strength approaches a critical strength. These optical properties can be comprehended by the characteristics of the LL wave functions. A comparison of AABG and AB-stacked bilayer graphene (BBG) demonstrates that the optical properties are dominated by the stacking symmetry. The presented results could offer a way to distinguish AABG from BBG and monolayer graphene.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ls Magneto-optical effects
73.21.Ac Multilayers
73.22.Pr Electronic structure of graphene
71.70.Di Landau levels

Low gap amorphous GaN1−xAsx alloys grown on glass substrate

K. M. Yu, S. V. Novikov, R. Broesler, Z. Liliental-Weber, A. X. Levander, V. M. Kao, O. D. Dubon, J. Wu, W. Walukiewicz, and C. T. Foxon

Appl. Phys. Lett. 97, 101906 (2010); http://dx.doi.org/10.1063/1.3488826 (3 pages) | Cited 3 times

Online Publication Date: 9 September 2010

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Amorphous GaN1−xAsx layers with As content in the range of x = 0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is ∼ 0.8–0.85 of their corresponding crystalline value. These amorphous films have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured band gap values for the crystalline and amorphous GaN1−xAsx alloys are in excellent agreement with the predictions of the band anticrossing model. The high absorption coefficient of ∼ 105 cm−1 for the amorphous GaN1−xAsx films suggests that relatively thin films (on the order of 1 μm) are necessary for photovoltaic application.
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68.55.ag Semiconductors
68.55.A- Nucleation and growth
61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Gc Amorphous semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Atomically smooth surfaces through thermoplastic forming of metallic glass

Golden Kumar, Peter A. Staffier, Jerzy Blawzdziewicz, Udo D. Schwarz, and Jan Schroers

Appl. Phys. Lett. 97, 101907 (2010); http://dx.doi.org/10.1063/1.3485298 (3 pages) | Cited 10 times

Online Publication Date: 9 September 2010

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We demonstrate that atomically smooth surfaces can be generated by thermoplastic forming of metallic glasses. This is enabled by the flow associated with the contact-line motion which removes rough surface layer from the advancing metallic glass-air interface. The thermoplastically formed surface is two orders of magnitude smoother than a polished surface of the same alloy. This process is capable of generating atomically smooth surfaces and replicating nanoscale features in a single processing step, providing a versatile toolbox for nanofabrication.
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81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
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Low frequency noise in InSb/GaAs and InSb/Si channels

J. Dobbert, L. Tran, F. Hatami, W. T. Masselink, Vas. P. Kunets, and G. J. Salamo

Appl. Phys. Lett. 97, 102101 (2010); http://dx.doi.org/10.1063/1.3483233 (3 pages) | Cited 2 times

Online Publication Date: 7 September 2010

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The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10−5 and 9×10−5 for InSb on GaAs and Si, respectively. The temperature dependence of the Hooge factors is investigated.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
73.50.Td Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ey III-V semiconductors

Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C

Eugene Chong, Yoon Soo Chun, and Sang Yeol Lee

Appl. Phys. Lett. 97, 102102 (2010); http://dx.doi.org/10.1063/1.3479925 (3 pages) | Cited 19 times

Online Publication Date: 7 September 2010

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Amorphous silicon–indium–zinc–oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium–zinc–oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.
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85.30.Tv Field effect devices

The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination

Hyun-Suk Kim, Kyung-Bae Park, Kyoung Seok Son, Joon Seok Park, Wan-Joo Maeng, Tae Sang Kim, Kwang-Hee Lee, Eok Su Kim, Jiyoul Lee, Joonki Suh, Jong-Baek Seon, Myung Kwan Ryu, Sang Yoon Lee, Kimoon Lee, and Seongil Im

Appl. Phys. Lett. 97, 102103 (2010); http://dx.doi.org/10.1063/1.3488823 (3 pages) | Cited 6 times

Online Publication Date: 10 September 2010

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The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O2/Ar gas flow ratio was found to result in the highest stability under bias stress experiments.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
81.05.Gc Amorphous semiconductors
68.55.ag Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Interface layer thickness effect on the photocurrent of Pt sandwiched polycrystalline ferroelectric Pb(Zr,Ti)O3 films

Dawei Cao, Hui Zhang, Liang Fang, Wen Dong, Fengang Zheng, and Mingrong Shen

Appl. Phys. Lett. 97, 102104 (2010); http://dx.doi.org/10.1063/1.3488829 (3 pages) | Cited 1 time

Online Publication Date: 10 September 2010

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Based on the analysis of the photocurrent behavior of Pt sandwiched Pb(Zr0.2Ti0.8)O3 (PZT) films, the experimental evidence of top Pt/PZT interface layer thickness effect on the photocurrent is reported. It was well established before that the photocurrent of metal/ferroelectric film is attributed to the height of Schottky contact barrier. However, our results suggest that the photocurrent of Pt/PZT interface contact is determined not only by the barrier height but also by the interface layer thickness, namely, by the built-in electrical field at the interface layer. The mechanism behind such photocurrent phenomenon is proposed.
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73.50.Pz Photoconduction and photovoltaic effects
78.56.-a Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
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Analytical/numerical calculation of the thermal stability factor in nanostructured exchange-coupled trilayers

Seul Gee Lee and S. H. Lim

Appl. Phys. Lett. 97, 102501 (2010); http://dx.doi.org/10.1063/1.3486163 (3 pages) | Cited 3 times

Online Publication Date: 7 September 2010

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An analytical/numerical method is used to calculate the thermal stability factor in nanostructured cells of exchange-coupled (either ferromagnetically or antiferromagnetically) trilayers. The method is then critically tested by comparing the calculated results with reliable experimental results reported recently in the literature [ S. Yakata, H. Kubota, T. Sugano, T. Seki, K. Yakushiji, A. Fukushima, S. Yuasa, and K. Ando, Appl. Phys. Lett. 95, 242504 (2009) ]. The accuracy of the method is confirmed by the excellent agreement for an antiferromagnetically coupled trilayer. For a ferromagnetically coupled trilayer, the comparison indicates a very weak interlayer exchange coupling (0.052 erg/cm2) between the two magnetic layers where the magnetization switching occurs in the via antiparallel mode.
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75.75.-c Magnetic properties of nanostructures
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Et Exchange and superexchange interactions
75.40.Mg Numerical simulation studies
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.78.Jp Ultrafast magnetization dynamics and switching

Switching field distribution and transition width in energy assisted magnetic recording

Xiaobin Wang, Kai-Zhong Gao, Julius Hohlfeld, and Mike Seigler

Appl. Phys. Lett. 97, 102502 (2010); http://dx.doi.org/10.1063/1.3486167 (3 pages) | Cited 5 times

Online Publication Date: 7 September 2010

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In order to achieve higher areal density, magnetization transition width must be reduced. This requires small media switching field distribution (SFD). Here we explore SFD and transition width in heat assisted magnetic recording and microwave assisted magnetic recording. We reveal that for energy assisted magnetic recording, additional SFD broadening exists as compare to conventional perpendicular recording. We show the effect of SFD broadening on transition width and the implications to the magnetic recording system as the areal density increases.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.78.-n Magnetization dynamics
75.50.Ss Magnetic recording materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Coherent operation of a gap-tunable flux qubit

Xiaobo Zhu, Alexander Kemp, Shiro Saito, and Kouichi Semba

Appl. Phys. Lett. 97, 102503 (2010); http://dx.doi.org/10.1063/1.3486472 (3 pages) | Cited 3 times

Online Publication Date: 9 September 2010

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We replace the Josephson junction defining a three-junction flux qubit’s properties with a tunable direct current superconducting quantum interference devices (dc-SQUIDs) in order to tune the qubit gap during the experiment. We observe different gaps as a function of the external magnetic pre-biasing field and the local magnetic field through the dc-SQUID controlled by high-bandwidth on chip control lines. The persistent current and gap behavior correspond to numerical simulation results. We set the sensitivity of the gap on the control lines during the sample design stage. With a tuning range of several gigahertz on a qubit dynamics timescale, we observe coherent system dynamics at the degeneracy point.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.Wx Vortex pinning (includes mechanisms and flux creep)
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