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Applied Physics Letters / Volume 97 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 97, 111103 (2010); http://dx.doi.org/10.1063/1.3489102 (3 pages)

Photoluminescence quenching dynamics in cadmium telluride and gallium arsenide induced by ultrashort terahertz pulse

Jingle Liu, Gurpreet Kaur, and X.-C. Zhang

Department of Physics, Applied Physics, and Astronomy, Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

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(Received 12 May 2010; accepted 23 August 2010; published online 13 September 2010)

The quenching dynamics of femtosecond-optical-pulse-induced photoluminescence in semiconductors under the influence of single-cycle terahertz pulses has been experimentally investigated. When electron kinetic energy gained from the terahertz field was comparable to or greater than initial excess electron energy, photoluminescence quenching was observed. Quenching in cadmium telluride (CdTe) and gallium arsenide (GaAs) is linearly proportional to the intensity of incident terahertz waves and reaches up to 17% and 4%, respectively, at a peak terahertz intensity of 13 MW/cm2. The photoluminescence measurement reveals that the ultrafast decay times of terahertz-pulse-induced quenching are 700±60 fs for CdTe and 350±30 fs for GaAs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cadmium compounds, gallium arsenide, high-speed optical techniques, III-V semiconductors, II-VI semiconductors, photoluminescence, radiation quenching, terahertz waves

PACS

  • 78.55.Et

    II-VI semiconductors

  • 78.55.Cr

    III-V semiconductors

  • 78.47.jd

    Time resolved luminescence

  • 42.65.Re

    Ultrafast processes; optical pulse generation and pulse compression

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3489102

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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