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20 Sep 2010

Volume 97, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 97, 123101 (2010); http://dx.doi.org/10.1063/1.3490637 (3 pages)

Mark W. Licurse and Peter K. Davies
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Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors

Cheng-Wen Kuo, San-Lein Wu, Shoou-Jinn Chang, Yao-Tsung Huang, Yao-Chin Cheng, and Osbert Cheng

Appl. Phys. Lett. 97, 123501 (2010); http://dx.doi.org/10.1063/1.3491211 (3 pages) | Cited 2 times

Online Publication Date: 20 September 2010

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The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge’s parameter αH, we found that the unified model can properly interpret the 1/f noise mechanism in our device. On the other hand, lower normalized input-referred noise (LSVG) level in number-fluctuation-dominated regime (region I) and smaller curvature of LSVG versus VGS-VTH in mobility-fluctuation-dominated regime (region II) are attributed to the reduced tunneling attenuation length and Coulomb scattering coefficient, respectively. It represents an intrinsic benefit of 1/f noise behavior stemming from SMT-induced more strain in short channel device.
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85.30.Tv Field effect devices

The effect of N-polar GaN domains as Ohmic contacts

J. Xie, S. Mita, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar

Appl. Phys. Lett. 97, 123502 (2010); http://dx.doi.org/10.1063/1.3491173 (3 pages) | Cited 1 time

Online Publication Date: 21 September 2010

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Transfer line method measurements revealed that if the Ohmic contact regions were replaced by N-polar GaN, the contact resistance could be reduced from 0.71 Ω mm (or ρc = 4×10−6 Ω cm2) to 0.24 Ω mm for a ∼ 200 nm thick Si-doped GaN layer. The reduction in contact resistance was largely due to the ∼ 1019 cm−3 free carriers in N-polar source/drain regions as measured by Hall effect. Secondary ion mass spectroscopy confirmed that oxygen doping in the N-polar region was more than three orders of magnitude greater than that in the Ga-polar region that was explained by the large difference in the adsorption energy for oxygen ( ∼ 1.3 eV/atom) between the N- and Ga-polar surfaces during the metalorganic chemical vapor deposition.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
72.20.My Galvanomagnetic and other magnetotransport effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.43.Mn Adsorption kinetics

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Elena Plis, S. Myers, M. N. Kutty, J. Mailfert, E. P. Smith, S. Johnson, and S. Krishna

Appl. Phys. Lett. 97, 123503 (2010); http://dx.doi.org/10.1063/1.3492853 (3 pages) | Cited 2 times

Online Publication Date: 22 September 2010

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We report on the investigation of lateral diffusion of minority carriers in InAsSb based photodetectors with the nBn design. Diffusion lengths (DLs) were extracted from temperature dependent I-V measurements. The behavior of DL as a function of applied bias, temperature, and composition of the barrier layer was investigated. The obtained results suggest that lateral diffusion of minority carriers is not the limiting factor for InAsSb based nBn mid-wave infrared detector performance at high temperatures (>200 K). The detector with an As mole fraction of 10% in the barrier layer has demonstrated values of DL as low as 7 μm (Vb = 0.05 V) at 240 K.
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66.30.-h Diffusion in solids
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

CdS/CdTe solar cells with MoOx as back contact buffers

Hao Lin, Wei Xia, Hsiang N. Wu, and Ching W. Tang

Appl. Phys. Lett. 97, 123504 (2010); http://dx.doi.org/10.1063/1.3489414 (3 pages) | Cited 13 times

Online Publication Date: 22 September 2010

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Ohmic back contacts for CdS/CdTe solar cells with MoOx as the contact buffer have been demonstrated. With contacts such as MoOx/Ni and MoOx/Al, cell efficiencies comparable to those with conventional back contacts have been produced. Thermal stress tests indicate that MoOx is effective in suppressing metal diffusion into p-CdTe. The usefulness of MoOx is attributed to its unusually high work function which is needed to match that of p-type CdTe in producing contacts of low resistance.
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88.40.H- Solar cells (photovoltaics)
88.40.J- Types of solar cells
66.30.-h Diffusion in solids
65.40.gh Work functions
81.05.Dz II-VI semiconductors

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Greg Jolley, Hao Feng Lu, Lan Fu, Hark Hoe Tan, and Chennupati Jagadish

Appl. Phys. Lett. 97, 123505 (2010); http://dx.doi.org/10.1063/1.3492836 (3 pages) | Cited 7 times

Online Publication Date: 23 September 2010

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We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion region where they recombine with carriers occupying quantum dot states due to a thermal distribution. The departure of the device studied here from an ideal intermediate band solar cell is discussed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.65.Hb Quantum dots (patterned in quantum wells)
73.61.Ey III-V semiconductors
88.40.H- Solar cells (photovoltaics)

ZnO nanowire and mesowire for logic inverter fabrication

Young Tack Lee, Seongil Im, Ryong Ha, and Heon-Jin Choi

Appl. Phys. Lett. 97, 123506 (2010); http://dx.doi.org/10.1063/1.3492837 (3 pages) | Cited 5 times

Online Publication Date: 23 September 2010

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We report on a ZnO-based logic inverter utilizing two field effect transistors (FETs), whose respective channel has different wire-diameters under a top-gate dielectric of poly-4-vinylphenol. One FET with nanowire (160 nm) channel displayed an abrupt drain current (ID) increase and fast ID saturation near its positive threshold voltage (Vth) while the other FET with mesowire (770 nm) showed a thin-film transistor-like behavior and a negative Vth. When the nanowire and mesowire FETs were, respectively, used as a driver and a load, our inverter demonstrated an excellent voltage gain as high as 25 under a supply voltage of 20 V.
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85.30.Tv Field effect devices
85.35.Ds Quantum interference devices
84.30.Sk Pulse and digital circuits
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