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20 Sep 2010

Volume 97, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 97, 123101 (2010); http://dx.doi.org/10.1063/1.3490637 (3 pages)

Mark W. Licurse and Peter K. Davies
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First-principles study of fluorine-doped zinc oxide

Bo Liu, Mu Gu, Xiaolin Liu, Shiming Huang, and Chen Ni

Appl. Phys. Lett. 97, 122101 (2010); http://dx.doi.org/10.1063/1.3492444 (3 pages)

Online Publication Date: 21 September 2010

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We present first-principles calculations for fluorine-doped zinc oxide (ZnO:F) by using density-functional theory. Under O-poor condition, fluorine substitution for oxygen (FO) is energetically favorable in ZnO. FO can effectively diminish oxygen vacancies. With high fluorine concentration, fluorine interstitial (Fi) may appear. The high transition energies of FO and Fi suggest that FO and Fi could act as deep donor and acceptor which cannot provide free carriers in ZnO at room temperature. The increase of carriers and mobility in ZnO:F could not contribute from deep donor FO, but may be due to the surface passivation effect of fluorine.
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61.72.jd Vacancies
81.65.Rv Passivation
72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.jj Interstitials

Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells

Seung Jae Baik, Sang Jung Kang, and Koeng Su Lim

Appl. Phys. Lett. 97, 122102 (2010); http://dx.doi.org/10.1063/1.3491164 (3 pages) | Cited 5 times

Online Publication Date: 21 September 2010

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The polarity of built-in electric field in p type amorphous SiC window layer originated from the band alignment with the front electrode, strongly affects carrier collection of amorphous Si solar cells. Additionally, it can be switched by reversing the surface band bending of transparent electrodes. Nitrogen incorporation at the surface of Al-doped ZnO modifies the surface band bending from the condition of carrier accumulation to that of carrier depletion; thereby quantum efficiency in short wavelength region is enhanced. The reversal of band bending also causes degradation of fill factors and open circuit voltages, which can be minimized to attain efficiency improvement.
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88.40.jj Silicon solar cells

Investigation of enhanced ultraviolet emission from different Ti-capped ZnO structures via surface passivation and surface plasmon coupling

Jie Song, Xiuyun An, Jinyuan Zhou, Yanxia Liu, Wei Wang, Xiaodong Li, Wei Lan, and Erqing Xie

Appl. Phys. Lett. 97, 122103 (2010); http://dx.doi.org/10.1063/1.3489511 (3 pages) | Cited 9 times

Online Publication Date: 21 September 2010

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Photoluminescent properties from three types of Ti and TiO2 capped ZnO structures have been investigated with different surface/volume ratios. Interestingly, it was found that both of surface passivation and surface plasmon (SP) coupling could affect the enhancements of ultraviolet (UV) emissions in the Ti-capped ZnO, while the enhancement rates of UV emissions via SP coupling were much higher than those via surface-passivation modulation with the increasing surface/volume ratios. Upon the evaluation of the dependence of Purcell factor and electron densities, our results can be well explained through energy transfer between defect-related and SP-coupling emissions.
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78.55.Et II-VI semiconductors
81.65.Rv Passivation
72.80.Ey III-V and II-VI semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.40.Ns Metal-nonmetal contacts

Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation

Jae Chul Park, Sang Wook Kim, Chang Jung Kim, Sungchul Kim, Dae Hwan Kim, In-Tak Cho, and Hyuck-In Kwon

Appl. Phys. Lett. 97, 122104 (2010); http://dx.doi.org/10.1063/1.3491553 (3 pages) | Cited 1 time

Online Publication Date: 22 September 2010

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We investigate the low-frequency noise (LFN) behaviors of amorphous indium-gallium-zinc oxide thin-film transistors in the subthreshold, Ohmic, and saturation regimes. Measured LFNs are proportional to 1/fγ, with γ = 0.8–0.9 in all operation regimes. It is found that the LFN behavior follows the carrier number fluctuation model in the subthreshold regime, whereas in the Ohmic and saturation regimes, it agrees well with the bulk mobility fluctuation model. We also observe that the origin of 1/f noise in the Ohmic regime changes from the bulk mobility fluctuation to the carrier number fluctuation as the channel length decreases.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

(7×7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface

Praveen Kumar, Mahesh Kumar, and S. M. Shivaprasad

Appl. Phys. Lett. 97, 122105 (2010); http://dx.doi.org/10.1063/1.3490250 (3 pages) | Cited 5 times

Online Publication Date: 23 September 2010

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We report the change in electronic properties of the Ga/Si interface by monitoring the Ga(3d) core-level photoelectron spectra and electron diffraction induced by submonolayer Ga adsorption on Si(111)-7×7 surface. The spectra shows a flat band for submonolayer coverages, attributed to the metallic nature of the Si(111)-7×7 reconstruction and a premetallic band structure of two-dimensional Ga islands. At 1 ML, electron diffraction pattern shows metallic (7×7) to semiconducting (1×1) phase-transition and the spin-orbit split branching ratio of Ga(2p) core level attain the metallic bulk value, and the barrier assumes the Schottky–Mott value while full width half maxima and branching ratio attain bulk values.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.bg Semiconductors

Aperiodic conductivity oscillations in quasiballistic graphene heterojunctions

Milan Begliarbekov, Onejae Sul, Nan Ai, Eui-Hyeok Yang, and Stefan Strauf

Appl. Phys. Lett. 97, 122106 (2010); http://dx.doi.org/10.1063/1.3493652 (3 pages) | Cited 3 times

Online Publication Date: 23 September 2010

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We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillations were found to be inconsistent with pure Fabry–Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant tunneling through quasibound impurity states. This observation may be understood as another signature of Klein tunneling in graphene heterojunctions and is of importance for future development and modeling of graphene based nanoelectronic devices.
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85.30.Tv Field effect devices

Correlated electron transport assisted by surface acoustic waves in micron-separated quasi-one-dimensional channels

Jian-Hong He, Jie Gao, and Hua-Zhong Guo

Appl. Phys. Lett. 97, 122107 (2010); http://dx.doi.org/10.1063/1.3491287 (3 pages) | Cited 2 times

Online Publication Date: 23 September 2010

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We present the experimental investigation of correlated electron transport through three micron-separated quasi-one-dimensional channels formed in an AlxGa1−xAs/GaAs heterostructure. A surface acoustic wave captures electrons from the two-dimensional electron gas and drives them through two depleted channels connected with an open ballistic channel, where different potential situations are defined by three etched gates placed in series. Experimental results show an acoustoelectric current transition with two sets of quantized plateau which demonstrates the electron-electron correlation due to Coulomb interactions. This basic scheme is toward a physical implementation of quantum logic gates and the realization of quantum entanglement.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Iv Acoustical properties

High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps

H. Z. Zhang, L. Y. Liang, A. H. Chen, Z. M. Liu, Z. Yu, H. T. Cao, and Q. Wan

Appl. Phys. Lett. 97, 122108 (2010); http://dx.doi.org/10.1063/1.3492852 (3 pages) | Cited 5 times

Online Publication Date: 24 September 2010

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High-performance Y2O3/In2O3-based transparent thin-film transistors were processed featuring low thermal budget. The device shows a field-effect mobility of 43.5 cm2 V−1 s−1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 108. These results are attributed to the high dielectric constant of Y2O3 and unique electronic structure of In2O3. Furthermore, the cubic phases of crystalline Y2O3 and In2O3 films have the identical crystal structure with a small lattice mismatch, which provides a well-defined dielectric/semiconductor interface for the optimal performance.
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85.30.Tv Field effect devices
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