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20 Sep 2010

Volume 97, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 97, 123101 (2010); http://dx.doi.org/10.1063/1.3490637 (3 pages)

Mark W. Licurse and Peter K. Davies
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Hysteretic current-voltage characteristic in polycrystalline ceramic ferrites

Kunpeng Cai, Rui Wang, Bo Li, and Ji Zhou

Appl. Phys. Lett. 97, 122501 (2010); http://dx.doi.org/10.1063/1.3486476 (3 pages)

Online Publication Date: 20 September 2010

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Electric transport properties of sintered polycrystalline Zn0.6Mn0.4Fe2O4 ferrite prepared by traditional solid reaction method were studied. A hysteretic current-voltage characteristic was found, and it could be tuned by both relatively low electric field and magnetic field at room temperature. A magnetic hysteresis related electron transmission model was proposed to explain the results. The tunable electric transport properties are potentially significant for electronic applications, such as nonvolatile random access memories, memristors, and other circuit elements with memory.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Sk Insulators
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Gg Ferrimagnetics

Magnetic properties of Bi2FeMnO6: A multiferroic material with double-perovskite structure

Y. Du, Z. X. Cheng, S. X. Dou, X. L. Wang, H. Y. Zhao, and H. Kimura

Appl. Phys. Lett. 97, 122502 (2010); http://dx.doi.org/10.1063/1.3490221 (3 pages) | Cited 9 times

Online Publication Date: 21 September 2010

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Single phase Bi2FeMnO6 was synthesized on Si substrates by an electrospray method. Three peaks were observed in the temperature dependence of magnetization curve, which is attributed to the inhomogeneous distribution of Fe3+ and Mn3+. The observed magnetic peaks at 150 K, 260 K, and 440 K correspond to orderings of the ferrimagnetic Fe–O–Mn, and antiferromagnetic Mn–O–Mn and Fe–O–Fe, respectively. Heat capacity measurements were carried out to confirm these magnetic transitions. The Debye temperature of Bi2FeMnO6 is 339 K, calculated from Debye–Einstein fitting.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.25.Dk Orbital, charge, and other orders, including coupling of these orders
75.85.+t Magnetoelectric effects, multiferroics
77.80.-e Ferroelectricity and antiferroelectricity
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)

Prediction for room-temperature half-metallic ferromagnetism in the half-fluorinated single layers of BN and ZnO

E. J. Kan, H. J. Xiang, F. Wu, C. Tian, C. Lee, J. L. Yang, and M.-H. Whangbo

Appl. Phys. Lett. 97, 122503 (2010); http://dx.doi.org/10.1063/1.3491416 (3 pages) | Cited 8 times

Online Publication Date: 21 September 2010

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On the basis of density functional calculations we explored the possibility that BN and ZnO single layers can become ferromagnetic at room temperature and half-metallic upon fluorine adsorption. Fluorine atoms form stable bonds only with the B and Zn atoms on the graphenelike BN and ZnO single layers, respectively, and the resulting fluorinated BN and ZnO single layers are expected to become ferromagnetic half metals with Curie temperatures around room temperature. The fluorination of semiconductor single layers can lead to interesting spintronics and functional applications.
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75.30.Cr Saturation moments and magnetic susceptibilities
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
61.50.Lt Crystal binding; cohesive energy
75.50.Pp Magnetic semiconductors

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

A. Casiraghi, A. W. Rushforth, M. Wang, N. R. S. Farley, P. Wadley, J. L. Hall, C. R. Staddon, K. W. Edmonds, R. P. Campion, C. T. Foxon, and B. L. Gallagher

Appl. Phys. Lett. 97, 122504 (2010); http://dx.doi.org/10.1063/1.3491841 (3 pages) | Cited 3 times

Online Publication Date: 22 September 2010

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We have investigated the effects of postgrowth low temperature annealing on the magnetic, electrical, and structural properties of (Ga0.94Mn0.06)(As0.9P0.1) layers grown by molecular beam epitaxy. By controlling the annealing time, we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase in the carrier density, as a result of annealing, is found to be the primary reason for the sign reversal of the magnetic anisotropy, in qualitative agreement with theoretical predictions.
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75.70.Ak Magnetic properties of monolayers and thin films
73.61.Ey III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
75.30.Gw Magnetic anisotropy
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors

A low temperature anomaly observed in off-stoichiometric Ni–Mn–Ga system studied by higher harmonic ac-susceptibility measurements

Saurabh Kumar Srivastava, Vijay Kumar Srivastava, Anupam Joshi, Pawel Kamasa, Lajos Károly Varga, V. V. Khovaylo, and Ratnamala Chatterjee

Appl. Phys. Lett. 97, 122505 (2010); http://dx.doi.org/10.1063/1.3486155 (3 pages)

Online Publication Date: 23 September 2010

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Results of fundamental and third order ac susceptibility measurements in a Ni49Mn29Ga22 single crystal demonstrate that higher harmonics of ac-susceptibility measurement is an excellent tool to identify transitions/anomalies originating from different magnetic substructures that remain undetected by usual dc susceptibility measurements. Anomaly observed at low temperature ( ∼ 150 K) has also been explored by differential scanning calorimetry, temperature dependent x-ray diffraction, and transmission electron microscopy measurements. The results demonstrate that the magnetic subsystem in Ni–Mn–Ga is unstable at low temperatures not only for metastable modulated crystal structure but also for very stable nonmodulated tetragonal structure.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
61.66.Dk Alloys

Microwave assisted switching In bit patterned media: Accessing multiple states

T. J. Fal and R. E. Camley

Appl. Phys. Lett. 97, 122506 (2010); http://dx.doi.org/10.1063/1.3483773 (3 pages) | Cited 1 time

Online Publication Date: 24 September 2010

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Using a micromagnetics calculation, we explore the properties of a submicron magnetic square with microwave assisted switching. For a 10×160×160 nm3 structure of Fe–Ti–N, there are three particular stable magnetic states for reversal fields up to −320 Oe. One can switch between these different states by adding a microwave field. The strength and the frequency of the microwave field determine the final state. A microwave field of up to 30 Oe does not change the magnetization. Fields of 50 to 75 Oe result in an intermediate state, while larger microwave fields produce a reversed ground state.
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75.78.Jp Ultrafast magnetization dynamics and switching
75.60.-d Domain effects, magnetization curves, and hysteresis
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