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Applied Physics Letters / Volume 97 / Issue 13 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 132104 (2010); http://dx.doi.org/10.1063/1.3493268 (3 pages)

Thermoelectric properties of electrostatically tunable antidot lattices

Srijit Goswami1, Christoph Siegert1, Saquib Shamim2, Michael Pepper1, Ian Farrer1, David A. Ritchie1, and Arindam Ghosh2

1Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Department of Physics, Indian Institute of Science, Bangalore 560 012, India

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(Received 8 August 2010; accepted 5 September 2010; published online 27 September 2010)

We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are observed. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, Fermi level, gallium arsenide, III-V semiconductors, magnetoresistive devices, quantum interference devices, semiconductor heterojunctions, semiconductor quantum dots, Shubnikov-de Haas effect, silicon, thermoelectric devices, thermoelectric power, two-dimensional electron gas

PACS

  • 85.35.Ds

    Quantum interference devices

  • 85.35.Gv

    Single electron devices

  • 85.80.Fi

    Thermoelectric devices

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3493268

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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