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27 Sep 2010

Volume 97, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 133303 (2010); http://dx.doi.org/10.1063/1.3491815 (3 pages)

Yoshihide Fujisaki, Yoshiki Nakajima, Daisuke Kumaki, Toshihiro Yamamoto, Shizuo Tokito, Takahiro Kono, Jun-ichi Nishida, and Yoshiro Yamashita
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Hiding levitating objects above a ground plane

Jingjing Zhang, Yu Luo, and Niels Asger Mortensen

Appl. Phys. Lett. 97, 133501 (2010); http://dx.doi.org/10.1063/1.3493186 (3 pages) | Cited 2 times

Online Publication Date: 27 September 2010

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An approach to hiding objects levitating above a conducting sheet is suggested in this paper. The proposed device makes use of isotropic negative-refractive-index materials without extreme material parameters, and creates an illusion of a remote conducting sheet. Numerical simulations are performed to investigate the performance of this cloak in two-dimensional and three-dimensional cases.
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41.20.-q Applied classical electromagnetism
42.70.-a Optical materials

Dual cylindrical metallic grating-cladding polymer hollow waveguide for terahertz transmission with low loss

Dongbin Tian, Huaiwu Zhang, Qiye Wen, Zhiguo Wang, Sheng Li, Zhongjun Chen, and Xuejiao Guo

Appl. Phys. Lett. 97, 133502 (2010); http://dx.doi.org/10.1063/1.3491291 (3 pages) | Cited 1 time

Online Publication Date: 27 September 2010

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In this paper, a dual cylindrical metallic grating-cladding polymer hollow terahertz waveguide is proposed for the transmission of a wavelength range between 100 μm and 1.5 mm with low loss. The waveguide is comprised of copper cylindrical gratings embedded in both sides of hollow high-density polyethylene tubing. Numerical calculation shows that the dual cylindrical metallic grating-cladding polymer hollow waveguide can guide terahertz waves in the central air core with excellent mode qualities, and experimental results confirm that the attenuation constant of linear polarization HE11 mode can be reduced to 0.62 dB/m.
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84.40.Az Waveguides, transmission lines, striplines

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Katsuhisa Yoshida, Yoshitaka Okada, and Nobuyuki Sano

Appl. Phys. Lett. 97, 133503 (2010); http://dx.doi.org/10.1063/1.3488815 (3 pages) | Cited 11 times

Online Publication Date: 28 September 2010

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In order to design optimum structures for intermediate band solar cells, simulations based on self-consistent drift-diffusion model with a suitable treatment of the intermediate band in device domain are necessary. In this work, we have included the dependence of occupation rate of intermediate band at each position on optical generation rate via the intermediate band. Typical material parameters of GaAs were used except for the absorption coefficient of each corresponding band-to-band transition. Simulation results using our model indicate that the dependence of occupation rate on device position strongly affect short-circuit currents and also electrostatic potentials of the cell.
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31.15.xr Self-consistent-field methods
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Large low-frequency resistance noise in chemical vapor deposited graphene

Atindra Nath Pal, Ageeth A. Bol, and Arindam Ghosh

Appl. Phys. Lett. 97, 133504 (2010); http://dx.doi.org/10.1063/1.3493655 (3 pages) | Cited 1 time

Online Publication Date: 28 September 2010

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We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.
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73.50.Td Noise processes and phenomena
72.80.Vp Electronic transport in graphene
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Microfabricated deflection tensiometers for insoluble surfactants

Zachary A. Zell, SiYoung Q. Choi (최시영), L. Gary Leal, and Todd M. Squires

Appl. Phys. Lett. 97, 133505 (2010); http://dx.doi.org/10.1063/1.3491549 (3 pages)

Online Publication Date: 28 September 2010

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We describe a technique that enables sensitive surface pressure measurements of insoluble surfactants with small quantities in enclosed systems. We microfabricate free-floating microtensiometers that rest at liquid interfaces. Our devices isolate clean interfaces from surfactant-laden ones and deform in response to the surface pressure difference. Elastic beam theory enables straightforward interpretation of the measurements and the deliberate engineering of the sensitivity and dynamic range of the device. Surface pressure isotherms for model surfactant monolayers measured using our microtensiometer show excellent agreement with a conventional Wilhelmy plate.
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47.80.Fg Pressure and temperature measurements
68.03.Cd Surface tension and related phenomena

Superiority of common-base to common-emitter heterojunction bipolar transistors

Guoxuan Qin, Guogong Wang, Leon McCaughan, and Zhenqiang Ma

Appl. Phys. Lett. 97, 133506 (2010); http://dx.doi.org/10.1063/1.3491797 (3 pages) | Cited 1 time

Online Publication Date: 30 September 2010

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Common-emitter (CE) configuration of bipolar junction transistors has been used in virtually all amplifications since the invention of transistor, whereas common-base (CB) configuration has been rarely used due to its inferior performance in comparison to CE. For heterojunction bipolar transistors (HBTs) this conviction needs to be changed. We compared the radio-frequency (rf) power handling capability of the HBT between CE and CB configurations and analyzed their amplification mechanisms. It is found that CB HBT significantly outperforms CE HBT under proper bias conditions, revealing the significant superiority of CB to CE configuration of HBTs for rf power amplification.
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85.30.Pq Bipolar transistors

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Qi Dai, Qifeng Shan, Jing Wang, Sameer Chhajed, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske, Min-Ho Kim, and Yongjo Park

Appl. Phys. Lett. 97, 133507 (2010); http://dx.doi.org/10.1063/1.3493654 (3 pages) | Cited 15 times

Online Publication Date: 30 September 2010

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We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R = An+Bn2+Cn3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10−29 cm6 s−1. Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.
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85.60.Jb Light-emitting devices

Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification

W. S. Lau, Peizhen Yang, T. P. Chen, S. Y. Siah, and L. Chan

Appl. Phys. Lett. 97, 133508 (2010); http://dx.doi.org/10.1063/1.3489381 (3 pages)

Online Publication Date: 30 September 2010

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The six degenerate ellipsoid model can be used to study the effects of channel orientation on electron mobility. However, this approach has two assumptions: (i) the conduction band minimum near the interface between gate dielectric and silicon channel is the same as that of bulk silicon, (ii) the momentum relaxation time is independent of the channel orientation. This letter shows that the effective conductivity electron mass of (100) surface-oriented silicon is independent of channel orientation even though the actual conduction band minimum may be slightly different from the six degenerate ellipsoid model. Experimental data are provided to support our theory.
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72.20.Ee Mobility edges; hopping transport
71.20.Mq Elemental semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.05.Cy Elemental semiconductors

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

A. Cano and D. Jiménez

Appl. Phys. Lett. 97, 133509 (2010); http://dx.doi.org/10.1063/1.3494533 (3 pages) | Cited 4 times

Online Publication Date: 30 September 2010

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We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [ S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)] . We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.
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85.30.Tv Field effect devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Reflective dual-mode liquid crystal display switchable between dynamic and memory modes

Joong Ha Lee, Taehyung Kim, Hun Ki Shin, Chul Gyu Jhun, Soon-Bum Kwon, Dong-Guk Kim, Wook Sung Kim, Tae-Hoon Yoon, and Jae Chang Kim

Appl. Phys. Lett. 97, 133510 (2010); http://dx.doi.org/10.1063/1.3495778 (3 pages)

Online Publication Date: 1 October 2010

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This study proposes a reflective dual-mode liquid crystal display (RD-LCD) that can be operated in memory mode or dynamic mode according to the image contents. The proposed RD-LCD needs three states to represent dark and bright states, while a general reflective liquid crystal display has two states. Nevertheless, a compensation structure that can obtain high contrast ratios in both dynamic and memory modes has been optimized. The proposed RD-LCD can be operated without internal backlighting, thus making it a candidate for real green display.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
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