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27 Sep 2010

Volume 97, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 133303 (2010); http://dx.doi.org/10.1063/1.3491815 (3 pages)

Yoshihide Fujisaki, Yoshiki Nakajima, Daisuke Kumaki, Toshihiro Yamamoto, Shizuo Tokito, Takahiro Kono, Jun-ichi Nishida, and Yoshiro Yamashita
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Linking hopping conductivity to giant dielectric permittivity in oxides

A. Artemenko, C. Elissalde, U.-C. Chung, C. Estournès, S. Mornet, I. Bykov, and M. Maglione

Appl. Phys. Lett. 97, 132901 (2010); http://dx.doi.org/10.1063/1.3495779 (3 pages) | Cited 6 times

Online Publication Date: 27 September 2010

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With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
76.30.Lh Other ions and impurities
72.20.Ee Mobility edges; hopping transport
77.84.Cg PZT ceramics and other titanates
72.80.Sk Insulators

Temperature dependent switching mechanism of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 investigated by small and large signal measurements

Silke Schaab and Torsten Granzow

Appl. Phys. Lett. 97, 132902 (2010); http://dx.doi.org/10.1063/1.3493191 (3 pages) | Cited 9 times

Online Publication Date: 27 September 2010

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The transition region between the field induced ferroelectric and the ergodic phase in relaxor ferroelectrics offers the possibility to study the switching behavior as a function of the increasing relaxor character of the system. Here, field dependent small and large signal measurements are presented. The results obtained at distinct temperatures below the transition temperature Tt for (Pb0.92La0.08)(Zr0.65Ti0.35)O3 concerning P(E), S(E), ϵ33(E), and d33(E) display a strong temperature dependence. Analysis of the reversible and irreversible domain processes leads to the conclusion that switching occurs through an intermediate nanodomain state even in the ferroelectric regime.
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77.80.Fm Switching phenomena
77.84.Cg PZT ceramics and other titanates
77.80.Jk Relaxor ferroelectrics
77.80.B- Phase transitions and Curie point

Investigation of single and multidomain Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals with mm2 symmetry

Shujun Zhang, Fei Li, Jun Luo, Ru Xia, Wesley Hackenberger, and Thomas R. Shrout

Appl. Phys. Lett. 97, 132903 (2010); http://dx.doi.org/10.1063/1.3494532 (3 pages) | Cited 8 times

Online Publication Date: 27 September 2010

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The piezoelectric properties of Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals with various engineered domain configurations were investigated. Rhombohedral and monoclinic/orthorhombic crystals poled along their crystallographic [011] directions were found to possess macroscopic mm2 symmetry, with “2R” and “1O” domain, respectively. Crystals with the “2R” domain configuration were found to exhibit high extensional piezoelectric coefficients d33 ( ∼ 1300 pC/N) and d32 ( ∼ −1680 pC/N), while crystals with the “1O” configuration possessed high shear coefficients d15 ( ∼ 3500 pC/N) and d24 ( ∼ 2070 pC/N), with relatively low extensional piezoelectric coefficients d33 ( ∼ 340 pC/N) and d32 ( ∼ −260 pC/N). The observed results were explained by “polarization rotation” model, as related to their respective domain configurations.
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77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.66.Fn Inorganic compounds
77.84.Cg PZT ceramics and other titanates
77.84.Ek Niobates and tantalates

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen

Appl. Phys. Lett. 97, 132904 (2010); http://dx.doi.org/10.1063/1.3495776 (3 pages) | Cited 12 times

Online Publication Date: 28 September 2010

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Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Jv Interfaces; heterostructures; nanostructures
77.55.D- High-permittivity gate dielectric films
68.55.aj Insulators

Revisit of the Vögel–Fulcher freezing in lead magnesium niobate relaxors

Shanming Ke, Huiqing Fan, and Haitao Huang

Appl. Phys. Lett. 97, 132905 (2010); http://dx.doi.org/10.1063/1.3494531 (3 pages) | Cited 7 times

Online Publication Date: 28 September 2010

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The Vögel–Fulcher (VF) equation ω = ω0 exp[−Ea/kB(Tm−Tf)] was frequently used to describe the dielectric relaxation of relaxor ferroelectrics where ω is the probe frequency at the peak temperature Tm of either the real or imaginary parts of the dielectric constant. We revisited this relation in a typical relaxor lead magnesium niobate and found that the parameters obtained were not physically meaningful. Meaningful results can only be obtained by fitting the VF relation on the characteristic relaxation time τc, whose temperature dependence can be obtained from the Cole–Cole model. The freezing temperature we obtained is 230 K, below which τc becomes temperature independent.
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77.80.Jk Relaxor ferroelectrics
77.22.Gm Dielectric loss and relaxation
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.22.Ch Permittivity (dielectric function)

Phase transition study of integrated circuit chip power supplying based on ferroelectric ceramic

Zhenhai Zhang, Zhanzhong Cui, Jinglong Yan, and Kejie Li

Appl. Phys. Lett. 97, 132906 (2010); http://dx.doi.org/10.1063/1.3494534 (3 pages) | Cited 2 times

Online Publication Date: 29 September 2010

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We introduce the tin-modified and niobium-modified lead zirconate titanate ferroelectric ceramics as a micropower supplying source for integrated circuit chip. The ferroelectric ceramic phase transition under transverse shock wave compression can release the depolarization energy to the external storage capacitor. The porous microstructure ferroelectric ceramic micropower-generator is capable of generating low output voltage pulses with amplitudes 50.3 V and with transferred energy 1.12 mJ, and supplying integrated circuit chip with micropower sources. Theoretical calculations are conducted based on circuit analysis law, principle of dynamic high pressure, and shock wave physics, and the calculated response matches well with experimental data.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
84.30.Jc Power electronics; power supply circuits

SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers

S. Schmelzer, D. Bräuhaus, S. Hoffmann-Eifert, P. Meuffels, U. Böttger, L. Oberbeck, P. Reinig, U. Schröder, and R. Waser

Appl. Phys. Lett. 97, 132907 (2010); http://dx.doi.org/10.1063/1.3495990 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2010

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Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and dielectric SrTiO3 (STO) were grown directly on oxidized silicon substrates. The surface roughness of the layers was found to be very low (≲0.2 nm). Dielectric measurements as a function of temperature were performed on samples with different STO thickness down to 7 nm, showing temperature dependence of the interfacial passive layers. The dielectric constant of the STO films was found to be in the range of 200 at room temperature for all samples, which leads to a minimum capacitance equivalent thickness below 0.2 nm.
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84.32.Tt Capacitors

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

X. H. Zheng, A. P. Huang, Z. S. Xiao, Z. C. Yang, M. Wang, X. W. Zhang, W. W. Wang, and Paul K. Chu

Appl. Phys. Lett. 97, 132908 (2010); http://dx.doi.org/10.1063/1.3491292 (3 pages) | Cited 4 times

Online Publication Date: 30 September 2010

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The origin of the flat band voltage roll-off (VFB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the VFB sharp roll-off is proposed. The VFB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the VFB sharp roll-off.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Fx Diffusion; interface formation

Electric-field-induced phase switching in the lead free piezoelectric potassium sodium bismuth titanate

A. J. Royles, A. J. Bell, A. P. Jephcoat, A. K. Kleppe, S. J. Milne, and T. P. Comyn

Appl. Phys. Lett. 97, 132909 (2010); http://dx.doi.org/10.1063/1.3490235 (3 pages) | Cited 11 times

Online Publication Date: 1 October 2010

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High-energy synchrotron radiation has been used to demonstrate an electric-field-induced phase transformation in the ceramic xK1/2Bi1/2TiO3–(1−x)Na1/2Bi1/2TiO3, x = 0.2. Application of an electric field ≥ 2 kV mm−1 leads to a transformation from single phase rhombohedral to a mixture of tetragonal and rhombohedral phases. The texturing of the tetragonal phase increases with field strength. The electric-field-induced transformation suggests an excursion into the morphotropic phase boundary in this system. The compositions x = 0.1 and 0.3 reveal rhombohedral and tetragonal symmetry, respectively, both before and after the application of an electric field.
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64.70.K- Solid-solid transitions
77.65.-j Piezoelectricity and electromechanical effects
77.84.Cg PZT ceramics and other titanates
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.66.Fn Inorganic compounds
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