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27 Sep 2010

Volume 97, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 133303 (2010); http://dx.doi.org/10.1063/1.3491815 (3 pages)

Yoshihide Fujisaki, Yoshiki Nakajima, Daisuke Kumaki, Toshihiro Yamamoto, Shizuo Tokito, Takahiro Kono, Jun-ichi Nishida, and Yoshiro Yamashita
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Graphene and graphene oxide nanogap electrodes fabricated by atomic force microscopy nanolithography

Yudong He, Huanli Dong, Tao Li, Chengliang Wang, Wei Shao, Yajie Zhang, Lang Jiang, and Wenping Hu

Appl. Phys. Lett. 97, 133301 (2010); http://dx.doi.org/10.1063/1.3493647 (3 pages) | Cited 9 times

Online Publication Date: 27 September 2010

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Nanogap electrodes have been studied intensively both as ideal research tools for molecular electronics and fundamental building blocks for nanodevices. Here, graphene and graphene oxide nanogap electrodes with gap width below 10 nm were fabricated by atomic force microscopy (AFM) nanolithography. It provides a simple and convenient way to fabricate nanogap electrodes and transfer the nanogap electrodes onto any required substrate. As a preliminary demonstration, organic field-effect transistors and organic photoswitchers based on the nanogap electrodes were fabricated, which all exhibited high performance, indicating the great prospect of the nanogap electrodes and the AFM nanolithography technique for molecular electronics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
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Efficiency enhancement in small molecule bulk heterojunction organic solar cells via additive

Haijun Fan, Huixia Shang, Yongfang Li, and Xiaowei Zhan

Appl. Phys. Lett. 97, 133302 (2010); http://dx.doi.org/10.1063/1.3491268 (3 pages) | Cited 20 times

Online Publication Date: 27 September 2010

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Improved performance of small molecule bulk heterojunction (BHJ) organic solar cells based on 4,7-bis(2-triphenylamino-3-dodecyl-thiophene-5-yl)-benzo[c][1,2,5]thiadiazole (TTBTT)/PC71BM (1:3, w/w) blend has been obtained by using 1,8-octanedithiol (ODT) as a processing additive. Based on the analysis of absorption spectrum, charge transport, and film morphology, the 30% enhancement in power conversion efficiency (PCE) via 1% ODT addition is attributed to aggregated domain formation, enhanced absorption, improved hole mobility, and more balanced charge transport. Finally, a PCE as high as 2.86% was achieved, which is among the top reported for solution-processed small molecule BHJ organic solar cells.
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88.40.jr Organic photovoltaics
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Air-stable n-type organic thin-film transistor array and high gain complementary inverter on flexible substrate

Yoshihide Fujisaki, Yoshiki Nakajima, Daisuke Kumaki, Toshihiro Yamamoto, Shizuo Tokito, Takahiro Kono, Jun-ichi Nishida, and Yoshiro Yamashita

Appl. Phys. Lett. 97, 133303 (2010); http://dx.doi.org/10.1063/1.3491815 (3 pages) | Cited 13 times

Online Publication Date: 27 September 2010

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Air-stable n-type organic thin-film transistor (TFT) arrays and a complementary inverter circuit were fabricated on a flexible substrate. A benzobis(thiadiazole) (BBT) derivative-based TFT showed excellent air- stability and performances such as an electron mobility of over 0.1 cm2/V s, a large ON/OFF ratio over 108 when combined with a cross-linkable olefin-type polymer gate dielectric. In addition, an organic complementary inverter that combined the BBT derivative and a pentacene TFT demonstrated a sharp switching behavior and a high gain of over 150. We attribute these excellent characteristics to a combination of the low-lying lowest unoccupied molecular orbital level of n-type semiconductor material and the low interface trap of the gate dielectric.
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85.30.Tv Field effect devices
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Effect of blend layer morphology on performance of ZnPc:C60-based photovoltaic cells

Wenjin Zeng, Kian Soon Yong, Zhi Ming Kam, Furong Zhu, and Yuning Li

Appl. Phys. Lett. 97, 133304 (2010); http://dx.doi.org/10.1063/1.3493177 (3 pages) | Cited 11 times

Online Publication Date: 29 September 2010

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Zinc phthalocyanine (ZnPc): fullerene-C60 (C60)-based organic photovoltaic (OPV) with high power conversion efficiency (PCE) are fabricated. Homogeneously distributed grains of ∼ 40–50 nm are observed for the ZnPc:C60 blend layer deposited on bare indium-tin oxide (ITO) substrates. In contrast, the blend layer form grains of smaller lateral extensions ( ∼ 20–30 nm) on 3, 4-polyethylenedioxythiophene: polystyrenesulfonate modified ITO substrates. OPV fabricated on the former substrates show PCE of up to 3.9% that is about twice the PCE (1.9%) obtained for the devices on the latter substrates. This effect can be explained by better transport properties and reduced charge recombination of the blend layer on the bare ITO.
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84.60.Jt Photoelectric conversion
85.60.-q Optoelectronic devices
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Soft capacitor fibers for electronic textiles

Jian Feng Gu, Stephan Gorgutsa, and Maksim Skorobogatiy

Appl. Phys. Lett. 97, 133305 (2010); http://dx.doi.org/10.1063/1.3488351 (3 pages) | Cited 4 times

Online Publication Date: 30 September 2010

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A highly flexible, conductive polymer-based fiber with high electric capacitance is reported. The fiber is fabricated using fiber drawing method, where a multimaterial macroscopic preform is drawn into a submillimeter capacitor microstructured fiber. A typical measured capacitance per unit length of our fibers is 60–100 nF/m which is about 3 orders magnitude higher than that of a coaxial cable of a comparable diameter. The fiber has a transverse resistivity of 5 kΩ m. Softness, lightweight, absence of liquid electrolyte, and ease of scalability to large production volumes make the fibers interesting for various smart textile applications.
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84.32.Tt Capacitors
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Characterization of a soluble anthradithiophene derivative

B. R. Conrad, C. K. Chan, M. A. Loth, S. R. Parkin, X. Zhang, D. M. DeLongchamp, J. E. Anthony, and D. J. Gundlach

Appl. Phys. Lett. 97, 133306 (2010); http://dx.doi.org/10.1063/1.3495998 (3 pages) | Cited 5 times

Online Publication Date: 1 October 2010

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The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π/4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μS of 0.07 cm2/V s, current on-off ratio >107, and subthreshold swing S ≈ 1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.
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85.30.Tv Field effect devices
81.05.Fb Organic semiconductors
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
72.70.+m Noise processes and phenomena
81.10.Bk Growth from vapor
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