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4 Oct 2010

Volume 97, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 143501 (2010); http://dx.doi.org/10.1063/1.3494552 (3 pages)

S. Yang, K. Zhou, E. Kreit, and J. Heikenfeld
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Surface patterning on periodicity of femtosecond laser-induced ripples

Yang Yang, Jianjun Yang, Lu Xue, and Yan Guo

Appl. Phys. Lett. 97, 141101 (2010); http://dx.doi.org/10.1063/1.3495785 (3 pages) | Cited 6 times

Online Publication Date: 4 October 2010

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Properties of femtosecond laser-induced ripples on patterned metal surfaces are investigated through using a crossed two-step line-scribing method. It is found that the ripple periodicity tends to decrease with larger surface roughness but increase with higher laser fluence. For the increased roughness, the change in ripple periodicity becomes more sensitive to the incident laser fluence. A cut-off surface roughness that prevents from altering the ripple periodicity is also revealed to increase with the lower laser fluence. These phenomena are discussed in the view of surface plasmon polaritons in the laser-induced plasma and the modified dielectric constant of the roughened surfaces.
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81.65.Cf Surface cleaning, etching, patterning
79.20.Ds Laser-beam impact phenomena
68.35.bd Metals and alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
77.22.Ch Permittivity (dielectric function)

Many-body effects in InAs/GaAs quantum dot laser structures

I. O’Driscoll, M. Hutchings, P. M. Smowton, and P. Blood

Appl. Phys. Lett. 97, 141102 (2010); http://dx.doi.org/10.1063/1.3496011 (3 pages) | Cited 3 times

Online Publication Date: 4 October 2010

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We have measured the gain peak energy of GaInAs quantum dot laser structures, relative to the absorption peak, as a function of injection. We have used a calculation to remove the effects of state filling in the inhomogeneous distribution and to estimate the carrier density in the dots. We have identified shifts, which we associate with many body effects, of up to 8 meV at room temperature at injection levels typical for laser operation of about 2.2 electrons per dot, producing a peak modal gain of 10 cm−1.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Room-temperature operation of 3.6 μm In0.53Ga0.47As/Al0.48In0.52As quantum cascade laser sources based on intracavity second harmonic generation

M. Jang, R. W. Adams, J. X. Chen, W. O. Charles, C. Gmachl, L. W. Cheng, F.-S. Choa, and M. A. Belkin

Appl. Phys. Lett. 97, 141103 (2010); http://dx.doi.org/10.1063/1.3491219 (3 pages) | Cited 2 times

Online Publication Date: 4 October 2010

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We discuss a design of short-wavelength quantum cascade laser sources based on intracavity second harmonic generation. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasiphase matching. We demonstrate operation of λ ≈ 3.6 μm lattice-matched InGaAs/AlInAs/InP sources with approximately 6 μW of second-harmonic output at room temperature and conversion efficiency of approximately 130 μW/W2. Threshold current densities of devices with a nonlinear section were similar to that of the reference lasers without the nonlinear section.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Single deep ultraviolet light emission from boron nitride nanotube film

Lu Hua Li, Ying Chen, Meng-Yeh Lin, Alexey M. Glushenkov, Bing-Ming Cheng, and Jun Yu

Appl. Phys. Lett. 97, 141104 (2010); http://dx.doi.org/10.1063/1.3497261 (3 pages) | Cited 9 times

Online Publication Date: 4 October 2010

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Light in deep ultraviolet (DUV) region has a wide range of applications and the demand for finding DUV light emitting materials at nanoscale is increasingly urgent as they are vital for building miniaturized optic and optoelectronic devices. We discover that boron nitride nanotubes (BNNTs) with a well-crystallized cylindrical multiwall structure and diameters smaller than 10 nm can have single DUV emission at 225 nm (5.51 eV). The measured BNNTs are grown on substrate in the form of a thin film. This study suggests that BNNTs may work as nanosized DUV light sources for various applications.
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78.67.Ch Nanotubes
68.55.-a Thin film structure and morphology
61.46.Fg Nanotubes
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Excitation of short range surface plasmon polariton mode based on integrated hybrid coupler

Ruiyuan Wan, Fang Liu, Yidong Huang, Shuai Hu, Boyu Fan, Yoshikatsu Miura, Dai Ohnishi, Yunxiang Li, He Li, and Yang Xia

Appl. Phys. Lett. 97, 141105 (2010); http://dx.doi.org/10.1063/1.3499269 (3 pages) | Cited 5 times

Online Publication Date: 5 October 2010

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The short range surface plasmon polariton (SRSPP) mode, which has an antisymmetric field profile on the two sides of a thin metal film, has been excited efficiently based on an integrated vertical hybrid coupler. The coupler is composed of an Au (SRSPP) waveguide and a SiNx (dielectric) waveguide. Highly efficient coupling between the SRSPP mode and conventional dielectric waveguide mode was demonstrated. A compact (less than 90 μm long) polarizer with a low TE insertion loss and high TM extinction ratio up to 30 dB was realized by utilizing different characteristics of the TE and TM modes in the hybrid coupler.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
84.40.Az Waveguides, transmission lines, striplines
68.55.-a Thin film structure and morphology

Experimental demonstration of locally oxidized hybrid silicon-plasmonic waveguide

Ilya Goykhman, Boris Desiatov, and Uriel Levy

Appl. Phys. Lett. 97, 141106 (2010); http://dx.doi.org/10.1063/1.3496463 (3 pages) | Cited 12 times

Online Publication Date: 5 October 2010

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We experimentally demonstrate a self-aligned approach for the fabrication of nanoscale hybrid silicon-plasmonic waveguide fabricated by local oxidation of silicon (LOCOS). Implementation of the LOCOS technique provides compatibility with standard complementary metal-oxide-semiconductor technology and allows avoiding lateral misalignment between the silicon waveguide and the upper metallic layer. We directly measured the propagation and the coupling loss of the fabricated hybrid waveguide using a near-field scanning optical microscope. The demonstrated structure provides nanoscale confinement of light together with a reasonable propagation length of ∼ 100 μm. As such, it is expected to become an important building block in future on-chip optoelectronic circuitry.

A discretely tunable multifrequency source injection locked to a spectral-mode-filtered fiber laser comb

Han Young Ryu, Sung Hun Lee, Eok Bong Kim, Ho Suhng Suh, and Han Seb Moon

Appl. Phys. Lett. 97, 141107 (2010); http://dx.doi.org/10.1063/1.3497080 (3 pages) | Cited 1 time

Online Publication Date: 5 October 2010

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We present a discretely tunable multifrequency source injection locked to an optical frequency comb (OFC) based on the spectral-mode-filtered femtosecond fiber laser. The spectral-mode-filtered OFC with a 1.5 GHz mode spacing, which is based on an femtosecond fiber laser (FSFL) with 250 MHz mode spacing, was achieved using the spectral-mode-filtering method with a Fabry–Pérot cavity. With the spectral-mode-filtered OFC as the master laser and two distributed-feedback lasers as the slave lasers, we simultaneously selected and amplified the desired modes of the OFC using the IL technique. We generated the coherent multifrequency optical source to synthesize in the frequency range from gigahertz to terahertz.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Wg Other fiber-optical devices

Enhancement of the zero phonon line emission from a single nitrogen vacancy center in a nanodiamond via coupling to a photonic crystal cavity

Janik Wolters, Andreas W. Schell, Günter Kewes, Nils Nüsse, Max Schoengen, Henning Döscher, Thomas Hannappel, Bernd Löchel, Michael Barth, and Oliver Benson

Appl. Phys. Lett. 97, 141108 (2010); http://dx.doi.org/10.1063/1.3499300 (3 pages) | Cited 29 times

Online Publication Date: 6 October 2010

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Using a nanomanipulation technique a nanodiamond with a single nitrogen vacancy center is placed directly on the surface of a gallium phosphide photonic crystal cavity. A Purcell-enhancement of the fluorescence emission at the zero phonon line (ZPL) by a factor of 12.1 is observed. The ZPL coupling is a first crucial step toward future diamond-based integrated quantum optical devices.
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81.05.ug Diamond
81.07.Bc Nanocrystalline materials
78.55.Hx Other solid inorganic materials

1.54 μm emitters based on erbium doped InGaN p-i-n junctions

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada

Appl. Phys. Lett. 97, 141109 (2010); http://dx.doi.org/10.1063/1.3499654 (3 pages) | Cited 8 times

Online Publication Date: 8 October 2010

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We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μm2 mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 μm, due to Er intra-4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 μW. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Experimental verification of improving high-power microwave window breakdown thresholds by resonant magnetic field

Chao Chang, Jinyong Fang, Zhiqiang Zhang, Changhua Chen, Chuanxiang Tang, and Qiuliang Jin

Appl. Phys. Lett. 97, 141501 (2010); http://dx.doi.org/10.1063/1.3496487 (3 pages) | Cited 3 times

Online Publication Date: 4 October 2010

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Recently, high-power microwave (HPM) dielectric multipactor is theoretically discovered to be suppressed by utilizing external resonant magnetic field. This paper gives the related experimental demonstration of increasing the vacuum window breakdown thresholds. In the S-band HPM experiment with 0.5 μs width, the magnetic field with gyrofrequency Ω close to rf frequency ω can triple the breakdown threshold. Besides, reducing or enhancing magnetic field resulted in a relatively lower threshold in comparison of Ω ∼ ω, agreeing with theoretical analysis. By HPM pulse compression to 14 ns width, the threshold was also demonstrated to be significantly enhanced by magnetic field.
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84.40.Dc Microwave circuits
84.40.Az Waveguides, transmission lines, striplines

DNA oxidation by singlet delta oxygen produced by atmospheric pressure microdischarges

Joao Santos Sousa, Gerard Bauville, Bernard Lacour, Vincent Puech, Michel Touzeau, and Jean-Luc Ravanat

Appl. Phys. Lett. 97, 141502 (2010); http://dx.doi.org/10.1063/1.3499362 (3 pages) | Cited 7 times

Online Publication Date: 6 October 2010

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Arrays of microcathode sustained discharges were developed for the production of singlet delta oxygen (SDO) at atmospheric pressure. SDO densities higher than 3.5×1016 cm−3 have been efficiently produced and transported over distances longer than 50 cm. These arrays appear to be an ideal tool for examining the reactivity of SDO with biological components. Experiments were performed indicating that SDO is able to oxidize 2′-deoxyguanosine, a DNA constituent. It is shown that the 4-OH-8-oxodGuo formation is proportional to the number of SDO molecules while other reactive species could also be involved in the production of the nucleosides dSp and dZ.
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87.80.-y Biophysical techniques (research methods)
52.80.-s Electric discharges
87.15.R- Reactions and kinetics

Double-layer ion acceleration triggered by ion magnetization in expanding radiofrequency plasma sources

Kazunori Takahashi, Christine Charles, Rod W. Boswell, and Tamiya Fujiwara

Appl. Phys. Lett. 97, 141503 (2010); http://dx.doi.org/10.1063/1.3499653 (3 pages) | Cited 4 times

Online Publication Date: 7 October 2010

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Ion energy distribution functions downstream of the source exit in magnetically expanding low-pressure plasmas are experimentally investigated for four source tube diameters ranging from about 5 to 15 cm. The magnetic-field threshold corresponding to a transition from a simple expanding plasma to a double layer-containing plasma is observed to increase with a decrease in the source tube diameter. The results demonstrate that for the four geometries, the double layer and the accelerated ion beam form when the ion Larmour radius in the source becomes smaller than the source tube radius, i.e., when the ions become magnetized in the source tube.
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52.40.Kh Plasma sheaths
52.50.Dg Plasma sources
52.25.Fi Transport properties

The characteristics of atmospheric radio frequency discharges with frequency increasing at a constant power density

Yuan Tao Zhang, Qing Quan Li, Jie Lou, and Qing Min Li

Appl. Phys. Lett. 97, 141504 (2010); http://dx.doi.org/10.1063/1.3496474 (3 pages) | Cited 10 times

Online Publication Date: 8 October 2010

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A computational model is used to investigate the characteristics of atmospheric radio frequency discharges by increasing frequency from 20 to 100 MHz at a constant power density. The simulation results show that increasing frequency can effectively enhance electron density before the transition frequency but after it the ignition is quenched then the electron density decreases. However this simulation also indicates the maximum time-averaged electron energy reduces monotonically with the excitation frequency increasing at a constant power density.
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52.80.Pi High-frequency and RF discharges
52.65.Kj Magnetohydrodynamic and fluid equation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
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Broadband negative refraction in stacked fishnet metamaterial

Zeyong Wei, Yang Cao, Jin Han, Chao Wu, Yuancheng Fan, and Hongqiang Li

Appl. Phys. Lett. 97, 141901 (2010); http://dx.doi.org/10.1063/1.3496037 (3 pages) | Cited 6 times

Online Publication Date: 4 October 2010

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We demonstrate a scheme to utilize the stacked fishnet metamaterial for all-angle negative refraction and subwavelength imaging within a wide frequency range starting from zero frequency. The theoretical predictions are verified by the brute-force finite-difference-in-time-domain numerical simulations. The phenomena come from the negative evanescent coupling between the adjacent slab waveguides through the breathing air holes perforated on metal layers.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings
42.79.Gn Optical waveguides and couplers

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

Tetsuya Akasaka, Yasuyuki Kobayashi, and Makoto Kasu

Appl. Phys. Lett. 97, 141902 (2010); http://dx.doi.org/10.1063/1.3497017 (3 pages) | Cited 2 times

Online Publication Date: 5 October 2010

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Nucleus and spiral growth mechanisms of GaN were experimentally studied by varying the degree of supersaturation, σ, in selective-area metal organic vapor phase epitaxy. The spiral growth rate of GaN increased proportionally to σ2 in the σ range from 0.0632 to 0.230. The nucleus growth rate of GaN was much smaller than the spiral one in the σ range. The nucleation rate was almost zero at σ lower than 0.130, suddenly increased at higher σ values, and reached ∼ 107 cm−2 s−1 at σ of 0.230. These results are consistent with a theoretical analysis [ W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951)] .
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68.55.ag Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Erbium diffusion in silicon dioxide

Ying-Wei Lu, B. Julsgaard, M. Christian Petersen, R. V. Skougaard Jensen, T. Garm Pedersen, K. Pedersen, and A. Nylandsted Larsen

Appl. Phys. Lett. 97, 141903 (2010); http://dx.doi.org/10.1063/1.3497076 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2010

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Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick’s second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3±0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.
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66.30.J- Diffusion of impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.55.at Other materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Stress-induced Sn Nanowires from Si–Sn Nanocomposite Coatings

X. Xiao, A. K. Sachdev, D. Haddad, Y. Li, B. W. Sheldon, and S. K. Soni

Appl. Phys. Lett. 97, 141904 (2010); http://dx.doi.org/10.1063/1.3498673 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2010

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The growth of stress-induced tin (Sn) whiskers has been considered responsible for the failure of many electronic devices and many approaches have been developed to mitigate their growth. In this report, however, we describe a simple approach based on the same mechanism to promote the growth of Sn nanowires. The thermal expansion induced stress was utilized as the driving force to initiate the growth of Sn nanowires from Si–Sn phase-separated nanocomposite coatings. The nanostructure of the Si–Sn matrix was the key to controlling the shape and diameter of Sn nanowires. This approach provides additional flexibility for making desirable metallic nanowires with controlled dimensions.
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81.07.Gf Nanowires
62.23.Hj Nanowires
81.15.Cd Deposition by sputtering
64.75.Jk Phase separation and segregation in nanoscale systems
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.16.-c Methods of micro- and nanofabrication and processing

Monocliniclike local atomic structure in amorphous ZrO2 thin film

Deok-Yong Cho, Hyung-Suk Jung, Jeong Hwan Kim, and Cheol Seong Hwang

Appl. Phys. Lett. 97, 141905 (2010); http://dx.doi.org/10.1063/1.3497077 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2010

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The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2 films due to the structural disorder. The distinct local structure in a-ZrO2 from the ordinary tetragonal ZrO2 (t-ZrO2) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a-ZrO2 suggest inferior gate leakage current performances compared to the t-ZrO2 films.
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68.55.-a Thin film structure and morphology
79.60.Dp Adsorbed layers and thin films
77.22.Ch Permittivity (dielectric function)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.70.Dm X-ray absorption spectra
77.55.-g Dielectric thin films

Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth

W. Y. Woon (溫偉源), S. H. Wang (王聖豪), Y. T. Chuang (莊曜滕), M. C. Chuang (莊敏強), and C. L. Chen (陳佳伶)

Appl. Phys. Lett. 97, 141906 (2010); http://dx.doi.org/10.1063/1.3497195 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2010

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We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si:C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant activation is analyzed. The accumulated tensile strain induced by both C and P during SPER synergistically determines the onset of SPER rate retardation and leads to lower strain and electrical conductance near surface. Physical origin for the observed SPER rate evolution is discussed and explained with a strain included solute trapping model. Possibility of tailoring strain and doping profiles is discussed.
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61.72.uf Ge and Si
73.61.Cw Elemental semiconductors
68.60.Bs Mechanical and acoustical properties
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.ag Semiconductors
78.47.D- Time resolved spectroscopy (>1 psec)

AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices

Chih-Ming Lin, Wei-Cheng Lien, Valery V. Felmetsger, Matthew A. Hopcroft, Debbie G. Senesky, and Albert P. Pisano

Appl. Phys. Lett. 97, 141907 (2010); http://dx.doi.org/10.1063/1.3495782 (3 pages) | Cited 13 times

Online Publication Date: 6 October 2010

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Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C–SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperatures between approximately 300–450 °C. The AlN films were characterized by x-ray diffraction, scanning electron microscope, and transmission electron microscopy. A two-port surface acoustic wave device was fabricated on the AlN/3C–SiC/Si composite structure, and an expected Rayleigh mode exhibited a high acoustic velocity of 5200 m/s. The results demonstrate the potential of utilizing AlN films on epitaxial 3C–SiC layers to create piezoelectric resonant devices.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
68.55.ag Semiconductors
77.55.hd AlN
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

Acoustics at nanoscale: Raman–Brillouin scattering from thin silicon-on-insulator layers

N. Lou, J. Groenen, G. Benassayag, and A. Zwick

Appl. Phys. Lett. 97, 141908 (2010); http://dx.doi.org/10.1063/1.3499309 (3 pages) | Cited 2 times

Online Publication Date: 6 October 2010

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We report on Raman–Brillouin scattering from thin single silicon layers. Starting from a 33 nm silicon-on-insulator structure, a series of layers with progressively decreasing thicknesses was prepared using a chemical treatment consisting of oxide stripping/formation cycles. In order to determine these thicknesses, experimental Raman–Brillouin spectra are compared to calculations performed in the frame of the photoelastic model. We demonstrate that subnanometer changes in the silicon layer thickness can be derived from a proper analysis of the spectral response. It is shown that a 1 nm thick oxide forms during the chemical treatment.
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78.66.Db Elemental semiconductors and insulators
62.65.+k Acoustical properties of solids
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.30.Am Elemental semiconductors and insulators
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
81.05.Cy Elemental semiconductors

Do surfaces with mixed hydrophilic and hydrophobic areas enhance pool boiling?

Amy Rachel Betz, Jie Xu, Huihe Qiu, and Daniel Attinger

Appl. Phys. Lett. 97, 141909 (2010); http://dx.doi.org/10.1063/1.3485057 (3 pages) | Cited 20 times

Online Publication Date: 6 October 2010

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We demonstrate that smooth and flat surfaces combining hydrophilic and hydrophobic patterns improve pool boiling performance. Compared to a hydrophilic surface with 7° wetting angle, the measured critical heat flux and heat transfer coefficients of the enhanced surfaces are, up to respectively, 65% and 100% higher. Different networks combining hydrophilic and hydrophobic regions are characterized. While all tested networks enhance the heat transfer coefficient, large enhancements of critical heat flux are typically found for hydrophilic networks featuring hydrophobic islands. Hydrophilic networks indeed are shown to prevent the formation of an insulating vapor layer.
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64.70.fh Boiling and bubble dynamics
47.55.dp Cavitation and boiling
68.08.Bc Wetting
68.03.Cd Surface tension and related phenomena

Ultrafast carrier dynamics in pristine and FeCl3-intercalated bilayer graphene

Xingquan Zou, Da Zhan, Xiaofeng Fan, Dongwook Lee, Saritha K. Nair, Li Sun, Zhenhua Ni, Zhiqiang Luo, Lei Liu, Ting Yu, Zexiang Shen, and Elbert E. M. Chia

Appl. Phys. Lett. 97, 141910 (2010); http://dx.doi.org/10.1063/1.3497644 (3 pages) | Cited 5 times

Online Publication Date: 7 October 2010

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Ultrafast carrier dynamics of pristine bilayer graphene (BLG) and BLG intercalated with FeCl3 (FeCl3–G), were studied using time-resolved transient differential reflection (ΔR/R). Compared to BLG, the FeCl3–G data showed an opposite sign of ΔR/R, a slower rise time, and a single (instead of double) exponential relaxation. We attribute these differences in dynamics to the down-shifting in the Fermi level in FeCl3–G, as well as the formation of numerous horizontal bands arising from the d-orbitals of Fe. Our work shows that intercalation can dramatically change the electronic structure of graphene, and its associated carrier dynamics.
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81.05.ue Graphene
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.jg Time resolved reflection spectroscopy
73.20.At Surface states, band structure, electron density of states
63.20.kd Phonon-electron interactions
71.20.Tx Fullerenes and related materials; intercalation compounds

Nonlinear structural surface intensity: An application of contact acoustic nonlinearity to power flow based damage detection

F. Semperlotti and S. C. Conlon

Appl. Phys. Lett. 97, 141911 (2010); http://dx.doi.org/10.1063/1.3491801 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2010

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The concept of structural surface intensity is extended to the nonlinear domain introducing a physical quantity denominated nonlinear structural surface intensity (NSSI). This quantity is formulated for mechanical systems whose dynamic response is governed by nonlinear harmonic frequencies due to contact nonlinearities. A specific experiment simulating a “loose joint” type of damage in a stiffened bolted aluminum panel was designed to validate the NSSI formulation. Damage was introduced in the form of loose bolts characterized by a contact nonlinear response. The nonlinear response resulted from separation and impact at closure of the joined structures due to active interrogation by an external dynamic force. The results prove that NSSI is a monotonic function of the damage size.
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89.20.Kk Engineering
46.55.+d Tribology and mechanical contacts

Anomalous Raman features of silicon nanowires under high pressure

Somnath Bhattacharyya, Dmitry Churochkin, and Rudolph M. Erasmus

Appl. Phys. Lett. 97, 141912 (2010); http://dx.doi.org/10.1063/1.3499297 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2010

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The potential of silicon nanowires (SiNWs), (diameter <10 nm) to transform into rigid bundlelike structures with distinct phonon confinement under high pressure ( ≤ 15 GPa), instead of amorphizing as per previous reports, is demonstrated using in situ Raman spectroscopy. The observed splitting of the second order transverse optical (2TO) Raman mode into 2TO(L) and 2TO(W) phonon modes at ≥ 5 GPa establishes a highly anisotropic and mode-dependent pressure response of these SiNWs. Properties of these structures are superior compared to other nanostructured silicon and bulk-Si in terms of increased linear modulus, more localized phonon confinement, and less anharmonicity.
Show PACS
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
63.22.Gh Nanotubes and nanowires
78.30.Am Elemental semiconductors and insulators
62.50.-p High-pressure effects in solids and liquids
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