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Applied Physics Letters / Volume 97 / Issue 14 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 143101 (2010); http://dx.doi.org/10.1063/1.3488812 (3 pages)

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

M. Mehta1, D. Reuter2, A. D. Wieck2, S. Michaelis de Vasconcellos1, A. Zrenner1, and C. Meier1

1Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn, Germany
2Applied Solid State Physics, Ruhr-University of Bochum, Universitätsstr. 150, 44780 Bochum, Germany

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(Received 1 July 2010; accepted 22 August 2010; published online 4 October 2010)

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, electroluminescence, focused ion beam technology, gallium arsenide, III-V semiconductors, indium compounds, light emitting diodes, molecular beam epitaxial growth, optical pumping, p-i-n diodes, semiconductor growth, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3488812

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. D. Wieck, M. C. Hübner, S. Stufler, A. Zrenner, S. Malzer, and G. H. Döhler, Appl. Phys. Lett. 88, 121115 (2006)APPLAB000088000012121115000001.

    M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, Appl. Phys. Lett. 91, 123108 (2007)APPLAB000091000012123108000001.

    S. Stufler, P. Ester, A. Zrenner, and M. Bichler, Appl. Phys. Lett. 85, 4202 (2004)APPLAB000085000018004202000001.

    P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark, Phys. Rev. Lett. 84, 733 (2000).

    J. J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A. I. Tartakovskii, D. J. Mowbray, M S. Skolnick, S. L. Liew, A. G. Cullis, and M. Hopkinson, Phys. Rev. B 70, 201308 (2004).


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