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11 Oct 2010

Volume 97, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 97, 154101 (2010); http://dx.doi.org/10.1063/1.3479052 (3 pages)

Younggeun Park, Yeonho Choi, Debkishore Mitra, Taewook Kang, and Luke P. Lee
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The effect of high voltage on the bend transition in Pi-cells

Chang-Hun Lee, E. P. Raynes, and S. J. Elston

Appl. Phys. Lett. 97, 153501 (2010); http://dx.doi.org/10.1063/1.3502472 (3 pages) | Cited 2 times

Online Publication Date: 12 October 2010

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In Pi-cells, applying a high voltage to the initial splay state is known as the simplest method to generate the bend state quickly. It is generally assumed that the higher the applied voltage, the faster the bend transition. However, in some cases, the bend transition speed can be reduced and the transition process can even stop completely as the applied voltage increases. Therefore, in this paper, we consider situations where a higher voltage does not enhance the speed of the bend transition, and why this issue is important for commercial liquid crystal displays.
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88.80.ff Batteries
85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
82.47.-a Applied electrochemistry

Mechanical–electromagnetic coupling of microwire polymer composites at microwave frequencies

Faxiang Qin, H. X. Peng, C. Prunier, and C. Brosseau

Appl. Phys. Lett. 97, 153502 (2010); http://dx.doi.org/10.1063/1.3502488 (3 pages) | Cited 8 times

Online Publication Date: 14 October 2010

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We have fabricated a set of microwire composites with varying wire concentrations and studied their effective complex permittivity under the tensile stress at a frequency range of 1–6 GHz. It has been found that with increasing wire concentration the composite presents increasing effective permittivity and strain sensitivity. The Gaussian molecular network model shows a complex strain dependence of sensitivity due to the composite architecture influenced by the wire concentrations. All these results indicate the proposed composite are excellent candidate materials for the microwave sensing and structural interrogation applications.
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81.05.Qk Reinforced polymers and polymer-based composites
84.40.-x Radiowave and microwave (including millimeter wave) technology
77.22.Ch Permittivity (dielectric function)

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Dawei Yan, Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 97, 153503 (2010); http://dx.doi.org/10.1063/1.3499364 (3 pages) | Cited 7 times

Online Publication Date: 15 October 2010

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In this work, we include the polarization effect within the AlGaN barrier into calculation of the near-surface electrical field ES underneath the Schottky contact metal which determines the field-dependent characteristics of reverse gate leakage current of AlGaN/GaN high electron mobility transistors. High-frequency capacitance-voltage measurement combined with electrostatic analysis is used to estimate ES as a function of reverse bias voltage. The resultant log(I/ES) versus math curves over a temperature range from 293 to 453 K agree well with the predicted model of Frenkel–Poole (FP) emission of electrons up to the conductive states of threading dislocations. Around zero bias, the reverse polarization-field-induced FP emission current is balanced by a forward defect-assisted tunneling current, both of which follow the same temperature dependent characteristics.
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85.30.Tv Field effect devices
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