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11 Oct 2010

Volume 97, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 97, 154101 (2010); http://dx.doi.org/10.1063/1.3479052 (3 pages)

Younggeun Park, Yeonho Choi, Debkishore Mitra, Taewook Kang, and Luke P. Lee
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Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers

A. Mutig, J. A. Lott, S. A. Blokhin, P. Wolf, P. Moser, W. Hofmann, A. M. Nadtochiy, A. Payusov, and D. Bimberg

Appl. Phys. Lett. 97, 151101 (2010); http://dx.doi.org/10.1063/1.3499361 (3 pages) | Cited 6 times

Online Publication Date: 11 October 2010

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We present multioxide-aperture 980 nm-range vertical cavity surface emitting lasers (VCSELs) with highly temperature stable modulation characteristics operating error-free at 25 Gbit/s at 25 and 85 °C. We perform small signal modulation experiments and extract the fundamental physical parameters including relaxation resonance frequency, damping factor, parasitic cut-off frequency, D-factor, and K-factor, leading to identification of thermal processes and damping as the main factors that presently limit high speed device operation. We obtain very temperature-insensitive bandwidths around 13–15 GHz. Presented results clearly demonstrate the suitability of our VCSELs for practical and reliable optical data transmission systems.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Effect of periodicity on optical forces between a one-dimensional periodic photonic crystal waveguide and an underlying substrate

Jing Ma and Michelle L. Povinelli

Appl. Phys. Lett. 97, 151102 (2010); http://dx.doi.org/10.1063/1.3493658 (3 pages) | Cited 8 times

Online Publication Date: 11 October 2010

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We numerically investigate the attractive optical force between a suspended one-dimensional periodic photonic crystal waveguide and underlying substrate in a silicon-on-insulator platform. We show that the optical force is enhanced by designing the waveguide cross section to make the mode approach the band edge or substrate light line. We show that for periodic waveguides, the optical force is nonmonotonic with waveguide-substrate separation. This effect may enable the design of compact, integrated optical power limiters.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

Wei Yi, Taeseok Kim, Ilan Shalish, Marko Loncar, Michael J. Aziz, and Venkatesh Narayanamurti

Appl. Phys. Lett. 97, 151103 (2010); http://dx.doi.org/10.1063/1.3500981 (3 pages) | Cited 1 time

Online Publication Date: 11 October 2010

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The spectral responsivity for Schottky photodiodes based on the GaNxAs1−x alloys synthesized using nitrogen (N) ion implantation followed by pulsed-laser melting and rapid thermal annealing is presented. An N-induced redshift up to 250 meV (180 nm) in the photocurrent onset energy (wavelength) is observed. The N concentration dependence agrees with the values measured by photomodulated reflectance and ballistic electron emission microscopy, and with the calculation by the band anticrossing model for the splitting of the conduction band in GaNxAs1−x.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

A. Khiar, M. Rahim, M. Fill, F. Felder, F. Hobrecker, and H. Zogg

Appl. Phys. Lett. 97, 151104 (2010); http://dx.doi.org/10.1063/1.3501134 (3 pages) | Cited 9 times

Online Publication Date: 11 October 2010

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A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ∼ 1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100–170 K operation temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Photonic crystal slot nanobeam slow light waveguides for refractive index sensing

Bowen Wang, Mehmet A. Dündar, Richard Nötzel, Fouad Karouta, Sailing He, and Rob W. van der Heijden

Appl. Phys. Lett. 97, 151105 (2010); http://dx.doi.org/10.1063/1.3497296 (3 pages) | Cited 14 times

Online Publication Date: 11 October 2010

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We present the design, fabrication, and photoluminescence experiment of InGaAsP photonic crystal slot nanobeam slow light waveguides with embedded InAs quantum dots. The strong confinement of electric field in the slot region is confirmed by the measured record high sensitivity of 7×102 nm per refractive index unit (RIU) to the refractive index change of the environment. A cavity, formed by locally deflecting the two beams toward each other, gives an even higher sensitivity of about 9×102 nm/RIU.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.15.Eq Optical system design

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura

Appl. Phys. Lett. 97, 151106 (2010); http://dx.doi.org/10.1063/1.3502482 (3 pages) | Cited 7 times

Online Publication Date: 12 October 2010

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Scanning near field optical microscopy (SNOM) was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m-plane GaN substrates. Dual localization potential consisting of hundreds of nanometers- to micrometer-size areas as well as smaller localization centers were identified from the SNOM scans and near field photoluminescence spectral widths. The localization areas were found to align along the [0001] direction, which was attributed to partial strain relaxation at the monolayer steps.
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78.67.De Quantum wells
81.07.St Quantum wells
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors

Cerenkov radiation in metallic metamaterials

Jin-Kyu So, Jong-Hyo Won, M. A. Sattorov, Seung-Ho Bak, Kyu-Ha Jang, Gun-Sik Park, D. S. Kim, and F. J. Garcia-Vidal

Appl. Phys. Lett. 97, 151107 (2010); http://dx.doi.org/10.1063/1.3492846 (3 pages) | Cited 3 times

Online Publication Date: 12 October 2010

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The electromagnetic response of a metallic metamaterial to fast-moving electrons is studied by numerical simulations. The considered metamaterial is a one-dimensional array of slits perforated on a metallic film and is found to generate Cerenkov wakes when the electron beam travels near its surface. There is no energy threshold for the generation of such wakes, which would be promising to lower the operation energy of the electron beam in compact Cerenkov free-electron-lasers. Moreover, by analyzing the spectral dependence of the Cerenkov light, it is possible to map the dispersion relation of the guided modes supported by the metamaterial.
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61.80.Fe Electron and positron radiation effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
41.60.Bq Cherenkov radiation
42.70.Hj Laser materials

Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

A. Gaggero, S. Jahanmiri Nejad, F. Marsili, F. Mattioli, R. Leoni, D. Bitauld, D. Sahin, G. J. Hamhuis, R. Nötzel, R. Sanjines, and A. Fiore

Appl. Phys. Lett. 97, 151108 (2010); http://dx.doi.org/10.1063/1.3496457 (3 pages) | Cited 11 times

Online Publication Date: 12 October 2010

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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Random laser action in GaN nanocolumns

Masaru Sakai, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki, Hiroto Sekiguchi, Akihiko Kikuchi, and Katsumi Kishino

Appl. Phys. Lett. 97, 151109 (2010); http://dx.doi.org/10.1063/1.3495993 (3 pages) | Cited 9 times

Online Publication Date: 13 October 2010

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We report observations of random laser action in self-organized GaN nanocolumns. We have measured three samples with different filling fractions and investigated the dependence of the lasing property on the random configuration of nanocolumns. Numerical calculations based on a finite-difference time-domain method have also been performed and the comparison with the experimental results shows a clear relationship between the strength of light localization and the occurrence of random laser action.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Ultrahigh sensitivity magnetic field and magnetization measurements with an atomic magnetometer

H. B. Dang, A. C. Maloof, and M. V. Romalis

Appl. Phys. Lett. 97, 151110 (2010); http://dx.doi.org/10.1063/1.3491215 (3 pages) | Cited 21 times

Online Publication Date: 14 October 2010

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We describe an ultrasensitive atomic magnetometer based on optically pumped potassium atoms operating in a spin-exchange relaxation free regime. We demonstrate magnetic field sensitivity of 160 aT/Hz1/2 in a gradiometer arrangement with a measurement volume of 0.45 cm3 and energy resolution per unit bandwidth of 44ℏ. As an example of an application enabled by such a magnetometer, we describe measurements of weak remnant rock magnetization as a function of temperature with a sensitivity on the order of 10−10 emu/cm3/Hz1/2 and temperatures up to 420°C.
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07.55.Jg Magnetometers for susceptibility, magnetic moment, and magnetization measurements
91.60.Pn Magnetic and electrical properties
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Design and optimization of a high-efficiency nanoscale ±90° light-bending structure by mode selection and tailoring

M. W. Maqsood, R. Mehfuz, and K. J. Chau

Appl. Phys. Lett. 97, 151111 (2010); http://dx.doi.org/10.1063/1.3501130 (3 pages)

Online Publication Date: 14 October 2010

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We tailor the dispersive properties of a nanoscale structure to enable ±90° visible light-bending. The geometry and constituent materials of the structure are selected such that two low-loss modes are available to channel light toward and away from a nanoscale 90°-bend. Based on numerical simulations of visible light propagation through the structure, we propose an optimized geometry that yields maximum field overlap between the mode propagating toward and the mode propagating away from the 90°-bend, resulting in a peak bending efficiency of 92%.
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42.79.Gn Optical waveguides and couplers
42.25.Bs Wave propagation, transmission and absorption

Poling-inhibited ridge waveguides in lithium niobate crystals

C. L. Sones, P. Ganguly, C. Y. J. Ying, E. Soergel, R. W. Eason, and S. Mailis

Appl. Phys. Lett. 97, 151112 (2010); http://dx.doi.org/10.1063/1.3504698 (3 pages) | Cited 3 times

Online Publication Date: 15 October 2010

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Ultraviolet laser irradiation of a lithium niobate +z polar surface enables the production of ridge waveguides. Ultraviolet laser induced inhibition of poling is used to define an inverted domain pattern which transforms into a ridge structure by differential etching in hydrofluoric acid. The laser irradiation step also induces a refractive index change that provides the vertical confinement within the ridge structure. Furthermore, it was observed that poling-inhibition results in a significant enhancement of the refractive index contrast between the bulk crystal and the ultraviolet irradiated tracks.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.60.-v Laser optical systems: design and operation

Silicon-photonics light source realized by III–V/Si-grating-mirror laser

Il-Sug Chung and Jesper Mørk

Appl. Phys. Lett. 97, 151113 (2010); http://dx.doi.org/10.1063/1.3503966 (3 pages) | Cited 5 times

Online Publication Date: 15 October 2010

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A III–V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III–V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared to existing silicon light sources.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
42.79.Dj Gratings
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