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Applied Physics Letters / Volume 97 / Issue 16 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 161905 (2010); http://dx.doi.org/10.1063/1.3497287 (3 pages)

Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

A. Ouerghi1, R. Belkhou2, M. Marangolo3, M. G. Silly2, S. El Moussaoui2, M. Eddrief3, L. Largeau1, M. Portail4, and F. Sirotti2

1Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Route de Nozay, 91460 Marcoussis, France
2Synchrotron-SOLEIL, Saint-Aubin, BP 48, F 91192 Gif sur Yvette Cedex, France
3Institut des NanoSciences de Paris, UPMC Paris 06, CNRS UMR 7588, 4 Pl. Jussieu, 75005 Paris, France
4CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne, France

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(Received 16 July 2010; accepted 16 September 2010; published online 18 October 2010)

Graphene has emerged as a promising nanoelectronic material in electronic devices applications and studying two-dimensional electron gases with relativistic dispersion near Dirac point. Nonetheless, the control of the preparation conditions for homogeneous large-area graphene layers is difficult. Here, we illustrate evidence for high structural and electronic quality epitaxial graphene on 3C–SiC(111). Morphology and electronic structure of the graphene layers have been analyzed with low energy electron microscopy and angle resolved photoemission spectroscopy. Using scanning tunneling microscopy and scanning transmission electron microscopy, we show that graphene exhibits remarkably continuity of step edges suggesting the possibility of growing large scale graphene layer.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electronic structure, graphene, photoelectron spectra, scanning tunnelling microscopy, scanning-transmission electron microscopy, semiconductor epitaxial layers, silicon compounds, two-dimensional electron gas, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3497287

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A. Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, C. Berger, W. A. de Heer, A. Lanzara, and E. H. Conrad, Phys. Rev. Lett. 103, 226803 (2009).

    A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Penuelas, P. Jegou, A. Shukla, T. Chassagne, and M. Zielinski, Appl. Phys. Lett. 96, 191910 (2010)APPLAB000096000019191910000001.

    M. Portail, M. Zielinski, T. Chassagne, S. Roy, and M. Nemoz, J. Appl. Phys. 105, 083505 (2009)JAPIAU000105000008083505000001.

    K. V. Emtsev, F. Speck, T. Seyller, L. Ley, and J. D. Riley, Phys. Rev. B 77, 155303 (2008).

    J. Penuelas, A. Ouerghi, D. Lucot, C. David, J. Gierak, H. Estrade-Szwarckopf, and C. Andreazza-Vignolle, Phys. Rev. B 79, 033408 (2009).

    H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, Phys. Rev. B 77, 075413 (2008).

    D. A. Siegel, S. Y. Zhou, F. El Gabaly, A. K. Schmid, K. F. McCarty, and A. Lanzara, Phys. Rev. B 80, 241407(R) (2009).

    P. Lauffer, K. V. Emtsev, R. Graupner, T. Seyller, L. Ley, S. A. Reshanov, and H. B. Weber, Phys. Rev. B 77, 155426 (2008).

    K. R. Knox, S. Wang, A. Morgante, D. Cvetko, A. Locatelli, T. Onur Mentes, M. A. Niño, P. Kim, and R. M. Osgood, Jr., Phys. Rev. B, 78, 201408(R) (2008).

    I. Deretzis and A. La Magna, Appl. Phys. Lett. 95, 063111 (2009)APPLAB000095000006063111000001.


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