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Applied Physics Letters / Volume 97 / Issue 16 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 163501 (2010); http://dx.doi.org/10.1063/1.3499365 (3 pages)

Si–InAs heterojunction Esaki tunnel diodes with high current densities

M. T. Björk, H. Schmid, C. D. Bessire, K. E. Moselund, H. Ghoneim, S. Karg, E. Lörtscher, and H. Riel

IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland

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(Received 6 August 2010; accepted 20 September 2010; published online 18 October 2010)

Si–InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates. At substrate doping concentrations of 1×1016 and 1×1019 cm−3, conventional diode characteristics were obtained, from which a valence band offset between Si and InAs of 130 meV was extracted. For a substrate doping of 4×1019 cm−3, heterojunction tunnel diode characteristics were obtained showing current densities in the range of 50 kA/cm2 at 0.5 V reverse bias. In addition, in situ doping of the InAs wires was performed using disilane to further boost the tunnel currents up to 100 kA/cm2 at 0.5 V reverse bias for the highest doping ratios.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

current density, doping profiles, elemental semiconductors, III-V semiconductors, indium compounds, nanowires, p-n heterojunctions, semiconductor quantum wires, silicon, tunnel diodes, valence bands

PACS

  • 85.30.Mn

    Junction breakdown and tunneling devices (including resonance tunneling devices)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3499365

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    L. Esaki, Phys. Rev. 109, 603 (1958).

    A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, Phys. Rev. 121, 684 (1961).

    E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, J. Appl. Phys. 97, 114325 (2005)JAPIAU000097000011114325000001.


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