LOG IN or SELECT A PURCHASE OPTION:
Appl. Phys. Lett. 97, 163501 (2010); http://dx.doi.org/10.1063/1.3499365 (3 pages)
Si–InAs heterojunction Esaki tunnel diodes with high current densities
(Received 6 August 2010; accepted 20 September 2010; published online 18 October 2010)
© 2010 American Institute of Physics
KEYWORDS and PACS
Junction breakdown and tunneling devices (including resonance tunneling devices)
ReferencesL. Esaki, Phys. Rev. 109, 603 (1958).
A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, Phys. Rev. 121, 684 (1961).
E. Ertekin, P. A. Greaney, D. C. Chrzan, and T. D. Sands, J. Appl. Phys. 97, 114325 (2005)JAPIAU000097000011114325000001.
For access to citing articles, you need to log in.
Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)