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18 Oct 2010

Volume 97, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 97, 162901 (2010); http://dx.doi.org/10.1063/1.3501139 (3 pages)

Wei-Feng Rao, Ke-Wei Xiao, Tian-Le Cheng, Jie E. Zhou, and Yu U. Wang
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Si–InAs heterojunction Esaki tunnel diodes with high current densities

M. T. Björk, H. Schmid, C. D. Bessire, K. E. Moselund, H. Ghoneim, S. Karg, E. Lörtscher, and H. Riel

Appl. Phys. Lett. 97, 163501 (2010); http://dx.doi.org/10.1063/1.3499365 (3 pages) | Cited 8 times

Online Publication Date: 18 October 2010

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Si–InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates. At substrate doping concentrations of 1×1016 and 1×1019 cm−3, conventional diode characteristics were obtained, from which a valence band offset between Si and InAs of 130 meV was extracted. For a substrate doping of 4×1019 cm−3, heterojunction tunnel diode characteristics were obtained showing current densities in the range of 50 kA/cm2 at 0.5 V reverse bias. In addition, in situ doping of the InAs wires was performed using disilane to further boost the tunnel currents up to 100 kA/cm2 at 0.5 V reverse bias for the highest doping ratios.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Trapping in high-k dielectrics

Rosario Rao, Riccardo Simoncini, and Fernanda Irrera

Appl. Phys. Lett. 97, 163502 (2010); http://dx.doi.org/10.1063/1.3503583 (3 pages) | Cited 2 times

Online Publication Date: 19 October 2010

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In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model. The model is validated comparing predictions of flat band shift (calculated integrating the density of involved states) with experimental curves measured on GdSiO metal-oxide-semiconductor capacitors in many different conditions. The energy level of the trap is extracted.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.55.D- High-permittivity gate dielectric films
73.20.At Surface states, band structure, electron density of states
71.20.-b Electron density of states and band structure of crystalline solids

Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation

Mutsumi Kimura, Yudai Kamada, Shizuo Fujita, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, and Takashi Hirao

Appl. Phys. Lett. 97, 163503 (2010); http://dx.doi.org/10.1063/1.3502563 (3 pages) | Cited 1 time

Online Publication Date: 20 October 2010

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We analyzed the photoleakage current (Ileak) in ZnO thin-film transistors using device simulation. The dependences of Ileak on the location of light irradiation and drain voltage are reproduced by considering a Schottky barrier at the source contact using a two-dimensional device simulation. First, carrier generation is induced by light irradiation, the generated holes accumulate near the source contact, and some of these are captured in the donor traps. Next, the Schottky barrier becomes narrow, and electron injection increases via a tunneling effect. This discussion also suggests that the off-current is exceedingly low because the Schottky barrier prevents electron injection.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

X-ray detectors based on GaN Schottky diodes

Jean-Yves Duboz, Eric Frayssinet, Sébastien Chenot, Jean-Luc Reverchon, and Mourad Idir

Appl. Phys. Lett. 97, 163504 (2010); http://dx.doi.org/10.1063/1.3500838 (3 pages)

Online Publication Date: 21 October 2010

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GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its temporal dynamics as a function of the bias allows to identify a photovoltaic behavior at low bias and a photoconductive one at larger reverse biases. The GaN diode turned out to be linear as a function of the incident power. The noise and detectivity are given and discussed.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
85.30.Kk Junction diodes
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