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18 Oct 2010

Volume 97, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 97, 162901 (2010); http://dx.doi.org/10.1063/1.3501139 (3 pages)

Wei-Feng Rao, Ke-Wei Xiao, Tian-Le Cheng, Jie E. Zhou, and Yu U. Wang
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Breakdown temperature of electrons in SF6 gas

Han S. Uhm, Eun H. Choi, Guangsup Cho, and Han-Yong Ryu

Appl. Phys. Lett. 97, 161501 (2010); http://dx.doi.org/10.1063/1.3502476 (3 pages) | Cited 1 time

Online Publication Date: 18 October 2010

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The breakdown temperature Tb of electrons in SF6 gas is obtained by expressing the ionization and attachment coefficients of the gas in terms of the electron temperature Te assuming that the electron energy in the gas is in a Maxwellian distribution. The sparking criterion of the SF6 gas was obtained in terms of the gas pressure p and the anode-cathode distance d. It was found that the breakdown temperature Tb of electrons in SF6 in a high-pressure gas characterized by pd⪢0.001 is 4.9 eV, which is independent of the parameter pd. Here, pd is in units of atm cm.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.-s Electric discharges
34.80.Gs Molecular excitation and ionization

Microplasma-induced surface engineering of silicon nanocrystals in colloidal dispersion

V. Švrček, D. Mariotti, and M. Kondo

Appl. Phys. Lett. 97, 161502 (2010); http://dx.doi.org/10.1063/1.3505329 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2010

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We report on an atmospheric-pressure dc microplasma that can be used to passivate silicon nanocrystals (SiNCs) in ethanol and that stabilizes their optoelectronic properties. We show that microplasma processing enhances the SiNCs photoluminescence intensity by factor of more than ten times and ∼ 80 nm redshift of its maximum. The microplasma induces the replacement of hydrogen terminations with hydroxyl-/organic-based bonds. The resulting surface characteristics are responsible for the formation of conductive and stable SiNCs self-organized assemblies extending over 0.5 mm after dewetting on a substrate.
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81.05.Cy Elemental semiconductors
81.65.Rv Passivation
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.Ap Elemental semiconductors
73.63.-b Electronic transport in nanoscale materials and structures
72.40.+w Photoconduction and photovoltaic effects
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