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18 Oct 2010

Volume 97, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 97, 162901 (2010); http://dx.doi.org/10.1063/1.3501139 (3 pages)

Wei-Feng Rao, Ke-Wei Xiao, Tian-Le Cheng, Jie E. Zhou, and Yu U. Wang
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The role of Bi3+ ions in magneto-optic Ce and Bi comodified epitaxial iron garnet films

Jae-Yeol Hwang, Marcello Ferrera, Luca Razzari, Alain Pignolet, and Roberto Morandotti

Appl. Phys. Lett. 97, 161901 (2010); http://dx.doi.org/10.1063/1.3502477 (3 pages) | Cited 3 times

Online Publication Date: 18 October 2010

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Epitaxial Ce and Bi comodified iron garnet and Ce-modified yttrium iron garnet thin films were grown on (100)-oriented Gd3Ga5O12 substrates by pulsed laser deposition, in order to investigate the role of Bi3+ ions and their contribution to the structural, chemical, and magneto-optical properties. Both films showed a strong Faraday rotation of 0.65 deg/μm and 0.52 deg/μm at 1.55 μm, respectively. The valence state of the Ce ions was significantly changed by the substitution with Bi3+, which in turn was demonstrated to lead to an increase in the concentration of Ce3+ as well as to the decrease in the lattice mismatch.
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78.20.Ls Magneto-optical effects
75.70.Ak Magnetic properties of monolayers and thin films
68.55.at Other materials
81.15.Fg Pulsed laser ablation deposition
61.66.Fn Inorganic compounds

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Lin Zhou, Martha R. McCartney, David J. Smith, Anas Mouti, E. Feltin, J. F. Carlin, and N. Grandjean

Appl. Phys. Lett. 97, 161902 (2010); http://dx.doi.org/10.1063/1.3502483 (3 pages) | Cited 3 times

Online Publication Date: 18 October 2010

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The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by {11math1} planes, whereas the dodecagons are bounded by {10math1} and {11math1} planes, where the {10math1} facets are generated from the edges between adjacent {11math1} planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
64.75.Bc Solubility
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology

The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces

M. J. Demkowicz, D. Bhattacharyya, I. Usov, Y. Q. Wang, M. Nastasi, and A. Misra

Appl. Phys. Lett. 97, 161903 (2010); http://dx.doi.org/10.1063/1.3502594 (3 pages) | Cited 3 times

Online Publication Date: 18 October 2010

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Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.jd Vacancies
81.30.Mh Solid-phase precipitation

Contactless transport of acoustically levitated particles

Nada Bjelobrk, Daniele Foresti, Marko Dorrestijn, Majid Nabavi, and Dimos Poulikakos

Appl. Phys. Lett. 97, 161904 (2010); http://dx.doi.org/10.1063/1.3504191 (3 pages) | Cited 4 times

Online Publication Date: 18 October 2010

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We present herein a method for the acoustic translation of solid particles of waterlike density in air, by employing a single transducer and controlling the pressure field through regulation of the distance between the reflector and the radiating plate. The levitation and translation of polystyrene particles over a length of 37 mm (approximately 37 particle diameters) were experimentally demonstrated, numerically modeled, and explained. The results of the model show quantitatively how the acoustic pressure distribution inside the levitator chamber and the position of the potential nodes depend on the distance between reflector and radiating plate when the plate is driven in a flexural resonance mode. This phenomenon significantly extends the range of applications of acoustic levitation.
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43.25.Qp Radiation pressure
43.38.Ar Transducing principles, materials, and structures: general

Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, M. Portail, and F. Sirotti

Appl. Phys. Lett. 97, 161905 (2010); http://dx.doi.org/10.1063/1.3497287 (3 pages) | Cited 8 times

Online Publication Date: 18 October 2010

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Graphene has emerged as a promising nanoelectronic material in electronic devices applications and studying two-dimensional electron gases with relativistic dispersion near Dirac point. Nonetheless, the control of the preparation conditions for homogeneous large-area graphene layers is difficult. Here, we illustrate evidence for high structural and electronic quality epitaxial graphene on 3C–SiC(111). Morphology and electronic structure of the graphene layers have been analyzed with low energy electron microscopy and angle resolved photoemission spectroscopy. Using scanning tunneling microscopy and scanning transmission electron microscopy, we show that graphene exhibits remarkably continuity of step edges suggesting the possibility of growing large scale graphene layer.
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73.22.Pr Electronic structure of graphene
81.05.ue Graphene
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.55.ag Semiconductors

Non-melting super-resolution near-field apertures in Sb–Te alloys

R. E. Simpson, P. Fons, X. Wang, A. V. Kolobov, T. Fukaya, and J. Tominaga

Appl. Phys. Lett. 97, 161906 (2010); http://dx.doi.org/10.1063/1.3502593 (3 pages) | Cited 3 times

Online Publication Date: 19 October 2010

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The super-resolution near-field structure permits the formation of short-lived subdiffraction limit apertures that channel electromagnetic energy at the aperture boundary. This effect is commonly observed when a laser is focused onto a thin film of Sb based material. The aperture formation within Sb, Sb2Te3, Sb2Te, and SbTe is investigated by time resolved optical pump-probe techniques and found to occur without melting. Ab initio modeling has shown a threshold-like change in the optical properties below the melting temperature which leads to the formation of a near-field aperture. This threshold is shown to be a consequence of thermally induced misalignment of p-type bonding.
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42.79.Ag Apertures, collimators
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Interface chemistry and electronic structure of GaN/MgAl2O4 revealed by angle-resolved photoemission spectroscopy

G. He, T. Chikyow, and Shigefusa F. Chichibu

Appl. Phys. Lett. 97, 161907 (2010); http://dx.doi.org/10.1063/1.3505153 (3 pages) | Cited 1 time

Online Publication Date: 20 October 2010

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By modifying the MgAl2O4 substrate surface using chemical etching and thermal passivation, high-quality GaN films have been achieved on the MgAl2O4 (111) substrate via metalorganic chemical vapor deposition. The interface chemistry and electronic structure of GaN/MgAl2O4 interface have been investigated by angle-resolved photoemission spectroscopy. It has been noted that thermal passivation leads to the formation of Al2O3 buffered layer, which remains thermally stable during deposition and are primarily responsible for the epitaxial growth of GaN on MgAl2O4 (111) substrate.
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79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Dp Adsorbed layers and thin films
68.55.ag Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation

The absorption coefficient of PbSe/CdSe core/shell colloidal quantum dots

Bram De Geyter and Zeger Hens

Appl. Phys. Lett. 97, 161908 (2010); http://dx.doi.org/10.1063/1.3499754 (3 pages)

Online Publication Date: 20 October 2010

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PbSe/CdSe core/shell colloidal quantum dots (QDs) are used as a model system to study the absorption coefficient of colloidal QD heterostructures, consisting of at least two semiconductor materials. We show that at energies far above the band gap (3.1 and 3.5 eV) the experimental intrinsic absorption coefficient is in excellent agreement with the Maxwell–Garnett effective medium theory for core/shell heterostructures and bulk values for the dielectric function. This allows for a straightforward measurement of the QD concentration from the absorbance spectrum. It also implies that basic optical measurements on core/shell heterostructures, such as measurements of the oscillator strength and photoluminescence lifetime, can be corrected for the local field reduction in QD heterostructures.
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78.67.Hc Quantum dots
78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)

Structure and stability of thin water films on quartz surfaces

Yun-Wen Chen and Hai-Ping Cheng

Appl. Phys. Lett. 97, 161909 (2010); http://dx.doi.org/10.1063/1.3504710 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2010

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We investigated thin water films on quartz (0001) surfaces using first-principles density functional theory calculations. Interfacial structure and energetics were studied through a layer-by-layer deposition. From monolayer to multilayer, the low energy state configurations and adsorption sites show a transition due to formation of a highly stable bilayer membranelike structure. The water adsorption energy on a quartz surface coated by this membrane is of typical hydrogen bond strength for both dry and fully hydroxylated surfaces. The interactions between the surface and the water films are short-ranged due to shielding of the bilayer.
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68.43.Mn Adsorption kinetics
68.43.Bc Ab initio calculations of adsorbate structure and reactions
68.15.+e Liquid thin films
61.50.Lt Crystal binding; cohesive energy
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