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25 Oct 2010

Volume 97, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 173101 (2010); http://dx.doi.org/10.1063/1.3504230 (3 pages)

P. G. McDonald, J. Shumway, and I. Galbraith
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Ultraviolet stimulated emission in periodically polarity-inverted ZnO structures at room temperature

Jinsub Park, Takenari Goto, Sung Hyun Park, Jun-seok Ha, Euijoon Yoon, and Takafumi Yao

Appl. Phys. Lett. 97, 171101 (2010); http://dx.doi.org/10.1063/1.3503605 (3 pages) | Cited 1 time

Online Publication Date: 25 October 2010

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The photoluminescence and stimulated emission characteristics of two types of periodically polarity-inverted ZnO grating structures have been investigated in detail. Strong photoluminescence in the step regions is observed for all the samples. However, electron-hole plasma emission is observed only for one type of sample consisting of Zn-polar ZnO/CrN and O-polar ZnO/Cr2O3 layers. Moreover, strong stimulated emission occurs only in the Zn-polar layers. These optical phenomena have been discussed in terms of the diffusion of excitons and local crystal quality.
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78.66.-w Optical properties of specific thin films
78.55.-m Photoluminescence, properties and materials
78.45.+h Stimulated emission
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Three wave mixing of airy beams in a quadratic nonlinear photonic crystals

Ido Dolev and Ady Arie

Appl. Phys. Lett. 97, 171102 (2010); http://dx.doi.org/10.1063/1.3504247 (3 pages) | Cited 3 times

Online Publication Date: 25 October 2010

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We study three wave mixing processes of accelerating Airy beams in quadratic nonlinear crystals. In order to frequency convert these beams, the nonlinear process should be performed with the Fourier transform of the beam, rather than with the beam itself. This was confirmed experimentally by frequency doubling of one-dimensional and two-dimensional Airy beams in a periodically poled crystal. Sum-frequency or difference frequency process between two accelerating beam enable to set the acceleration rate and direction of the generated beam.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Qs Photonic bandgap materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.30.Kq Fourier optics

Correlation between second-order optical response and structure in thermally poled sodium niobium-germanate glass

G. Guimbretière, M. Dussauze, V. Rodriguez, and E. I. Kamitsos

Appl. Phys. Lett. 97, 171103 (2010); http://dx.doi.org/10.1063/1.3506501 (3 pages) | Cited 3 times

Online Publication Date: 25 October 2010

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We have carried out Raman and second harmonic generation (SHG) measurements to probe thermal poling-induced phenomena in glass 20Na2O-80[0.35Nb2O5-0.65GeO2]. A SHG response of 0.6 pm/V was measured after poling in a ∼ 3 μm thick layer under the anode and found to deviate from the widely used electric field-induced SHG model. This effect was associated with complex structural rearrangements in the subanode layer involving destruction of nonbridging oxygen atoms, formation of molecular oxygen, and enhancement of cross-linking in the glass network.
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42.70.Ce Glasses, quartz
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
61.43.Fs Glasses
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Highly photostable organic distributed feedback laser emitting at 573 nm

Victor Navarro-Fuster, Eva M. Calzado, Pedro G. Boj, José A. Quintana, José M. Villalvilla, María A. Díaz-García, Vera Trabadelo, Aritz Juarros, Aritz Retolaza, and Santos Merino

Appl. Phys. Lett. 97, 171104 (2010); http://dx.doi.org/10.1063/1.3506500 (3 pages) | Cited 10 times

Online Publication Date: 26 October 2010

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An efficient, low-cost, and highly photostable second-order distributed feedback (DFB) laser, fabricated by thermal nanoimprint lithography and based on a polymer active film containing a perylenediimide derivative, is reported. It shows a photostability half-life of 3.1×105 pump pulses (>8 h), when pumped at the same spot of the film. This value is the highest reported to date for organic DFB lasers measured under ambient conditions. The device emits at 573 nm, matching the second low-loss transmission window of poly(methylmethacrylate) (460–590 nm), thus offering potential for applications in data communications based on polymer optical fibers.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.86.+b Optical workshop techniques

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Tim Kolbe, Arne Knauer, Chris Chua, Zhihong Yang, Sven Einfeldt, Patrick Vogt, Noble M. Johnson, Markus Weyers, and Michael Kneissl

Appl. Phys. Lett. 97, 171105 (2010); http://dx.doi.org/10.1063/1.3506585 (3 pages) | Cited 14 times

Online Publication Date: 26 October 2010

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The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range has been investigated. The intensity for transverse-electric polarized light relative to the transverse-magnetic polarized light decreases with decreasing emission wavelength. This effect is attributed to rearrangement of the valence bands at the Γ-point of the Brillouin zone with changing aluminum and indium mole fractions in the (In)(Al)GaN quantum wells. For shorter wavelength the crystal-field split-off hole band moves closer to the conduction band relative to the heavy and light hole bands and as a consequence the transverse-magnetic polarized emission becomes more dominant for deep ultraviolet light emitting diodes.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Position controlled nanowires for infrared single photon emission

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, et al.

Appl. Phys. Lett. 97, 171106 (2010); http://dx.doi.org/10.1063/1.3506499 (3 pages) | Cited 13 times

Online Publication Date: 28 October 2010

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We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum dots show narrow emission lines. Superconducting single photon detectors, which have a higher sensitivity than avalanche photodiodes in the infrared, enable us to measure auto and cross correlations. Clear antibunching is observed [g(2)(0) = 0.12] and we show a biexciton–exciton cascade, which can be used to create entangled photon pairs.
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78.67.Lt Quantum wires
71.35.-y Excitons and related phenomena
78.67.Hc Quantum dots
78.55.-m Photoluminescence, properties and materials
81.16.-c Methods of micro- and nanofabrication and processing

Energy transfer from phosphorescent blue-emitting oxidized porous silicon to rhodamine 110

Bernard Gelloz, Noboru Harima, Hideki Koyama, Habib Elhouichet, and Nobuyoshi Koshida

Appl. Phys. Lett. 97, 171107 (2010); http://dx.doi.org/10.1063/1.3511740 (3 pages)

Online Publication Date: 29 October 2010

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Nanocomposites consisting of oxidized porous Si (OPSi) impregnated with rhodamine 110 (Rh110) molecules are characterized in terms of luminescence properties. The photoluminescence and its polarization memory strongly indicates a trace of energy transfer from the fast blue luminescence band of OPSi to the green one of Rh110. Time-resolved experiments showed that energy transfer to Rh110 also takes place from the long-lived blue phosphorescence of OPSi. The transfer channel from nonradiative states of OPSi to Rh110 was also found. The ability of OPSi to harvest and transfer absorbed photon energy to a guest is promising for applications in optoelectronics and biology.
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78.67.Sc Nanoaggregates; nanocomposites
78.47.jd Time resolved luminescence
78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
78.55.Mb Porous materials
81.05.Rm Porous materials; granular materials
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Geometric dependence of radio-frequency breakdown in normal conducting accelerating structures

Valery Dolgashev, Sami Tantawi, Yasuo Higashi, and Bruno Spataro

Appl. Phys. Lett. 97, 171501 (2010); http://dx.doi.org/10.1063/1.3505339 (3 pages) | Cited 5 times

Online Publication Date: 25 October 2010

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We present the experimental results of a systematic study of rf breakdown phenomenon in high vacuum accelerator structures. In this study, the surface processing, geometry, and materials of the structures have been varied, one parameter at a time. The breakdown rate or alternatively, the probability of breakdown/pulse/meter has been recorded for different operating parameters. These statistical data reveal a strong dependence of breakdown probability on surface magnetic field, or alternatively on surface pulsed heating. This is in contrast to the classical view of electric field dependence. We will present our experimental methodology and results showing this remarkable correlation.
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29.20.Ej Linear accelerators
29.27.-a Beams in particle accelerators

Temporal and spatial locking of nonlinear systems

Ian M. Rittersdorf, Y. Y. Lau, Jacob C. Zier, Ronald M. Gilgenbach, Edward J. Cruz, and John W. Luginsland

Appl. Phys. Lett. 97, 171502 (2010); http://dx.doi.org/10.1063/1.3506496 (3 pages)

Online Publication Date: 25 October 2010

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Peer-to-peer locking of two magnetrons is analyzed including the effects of a frequency chirp and of low frequency noise. It is found that complete phase locking cannot be achieved in either case. However, as long as the locking condition is well satisfied instantaneously, a high degree of locking occurs. This analysis in the time domain is adapted to locking in the spatial domain, in particular to the interpretation of some recent experiments on the spatial correlation of two ablating current-carrying wires that are placed sufficiently close to each other.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
84.30.Ng Oscillators, pulse generators, and function generators
84.40.Dc Microwave circuits
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Surface effects on the dynamic behavior of nanosized thin film resonator

Jinbok Choi, Maenghyo Cho, and Wonbae Kim

Appl. Phys. Lett. 97, 171901 (2010); http://dx.doi.org/10.1063/1.3502486 (3 pages) | Cited 8 times

Online Publication Date: 25 October 2010

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We present a continuum-based sequential multiscale dynamic model that can consider the unique dynamic behavior of a thin film with a nanosized thickness dimension. It is known that surface effects become dominant when the thickness of a thin film is scaled down to several nanometers because of the high surface-to-volume ratio of the thin film. Therefore, the natural frequencies and mode shapes of nanoelectromechanical system resonators can be significantly affected by surface effects. A finite element model considering surface effects of a nanosized thin film resonator is developed, and dynamic behavior is predicted using the proposed model by overcoming limitations of molecular dynamics simulations.
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07.10.Cm Micromechanical devices and systems
85.35.-p Nanoelectronic devices
68.60.-p Physical properties of thin films, nonelectronic

Evidence for short-time limit of martensite deaging in shape-memory alloys: Experiment and atomistic simulation

Junkai Deng, Xiangdong Ding, Zhen Zhang, Turab Lookman, Tetsuro Suzuki, Kazuhiro Otsuka, Jun Sun, Avadh Saxena, and Xiaobing Ren

Appl. Phys. Lett. 97, 171902 (2010); http://dx.doi.org/10.1063/1.3505494 (3 pages) | Cited 2 times

Online Publication Date: 25 October 2010

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It is well known that martensite aging effects in shape memory alloys can be simply removed when the aged martensite experiences a reverse transformation to the parent phase followed by cooling back to the martensite state. This “deaging” process has been known to be very fast but it remains a question as to whether there exists a short-time limit for such a fast deaging process. In this letter, we report that there indeed exists a short-time limit for the deaging. We have studied the aging and deaging of a Au-49.5Cd shape memory alloy, and found that complete removal of the previous aging, as manifested by the recovery of martensite transition start temperature (Ms), occurs only after aging in the parent phase for more than 500 s. Shorter time holding/aging in the parent phase results in a higher Ms as compared with the fully deaged case. Therefore, there is a fast relaxation process during the deaging or parent phase aging process. Atomistic simulations suggest that the origin of the observed time-dependent deaging arises from the change in short-range configurations of point defects, being the same as that of the martensite aging. As a result, it is possible to unify the microscopic mechanism of aging in both martensite and parent phase; both are due to a symmetry-conforming short-range ordering tendency of point defects.
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81.30.Kf Martensitic transformations
61.72.J- Point defects and defect clusters
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
64.70.K- Solid-solid transitions

Electronic structure of cleaved InAsP/InP(001) quantum dots measured by scanning tunneling spectroscopy

B. Fain, J. C. Girard, D. Elvira, C. David, G. Beaudoin, A. Beveratos, I. Robert-Philip, I. Sagnes, and Z. Z. Wang

Appl. Phys. Lett. 97, 171903 (2010); http://dx.doi.org/10.1063/1.3504257 (3 pages) | Cited 2 times

Online Publication Date: 25 October 2010

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We investigate the structural and electronic properties of cleaved InAsP quantum dots grown by metal organic chemical vapor deposition on a (001) InP substrate by means of cross-sectional scanning tunneling microscopy and spectroscopy. We performed spatially and energetically resolved differential conductance measurements on several dots and thus mapped their electronic wave functions. Five distinct quantum dot energy levels are identified, all of them strongly confined inside the quantum dot. We further discuss the structural characteristics inferred from topographical images in the specific case of parallelogram-based InAsP/InP(001) quantum dots as a mean of investigating the size of a buried quantum dot.
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71.20.Nr Semiconductor compounds
73.21.La Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Mechanical response of GaN film and micropillar under nanoindentation and microcompression

T. H. Sung, J. C. Huang, J. H. Hsu, and S. R. Jian

Appl. Phys. Lett. 97, 171904 (2010); http://dx.doi.org/10.1063/1.3506498 (3 pages) | Cited 10 times

Online Publication Date: 26 October 2010

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The mechanical properties of GaN are examined by microcompression. The Young’s modulus and compressive yield stress in microscale are directly measured to be ∼ 226 and 10 GPa, comparable to the modulus ( ∼ 272 GPa) and hardness (15 GPa) measured by nanoindentation. The Raman spectrum measurements and transmission electron microscopy observations reveal that the residual stress in deposited film can be largely released in the form of micropillar. Upon microcompression, the strain energy is basically stored by dislocation and defect accumulation, with minimum residual stress regeneration. The small bending of the c-axis of the GaN micropillar upon compression would affect its optical performance.
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81.05.Ea III-V semiconductors
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
78.30.Fs III-V and II-VI semiconductors
68.60.Bs Mechanical and acoustical properties

Strain-induced dimensionality crossover and associated pseudoelasticity in the premartensitic phase of Ni2MnGa

Z. H. Nie, Y. Ren, Y. D. Wang, D. M. Liu, D. E. Brown, G. Wang, and L. Zuo

Appl. Phys. Lett. 97, 171905 (2010); http://dx.doi.org/10.1063/1.3506508 (3 pages)

Online Publication Date: 26 October 2010

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The in situ high-energy x-ray diffraction was used for revealing an atomic mechanism on the two-step pseudoelastic behavior found in the premartensitic phase of Ni2MnGa magnetic shape memory alloy. The applied stress first suppresses the three-dimensional modulated structure of the premartensitic phase to a two-dimensional modulated one, which is accompanied by a change in the modulation wave vector and accommodates a large lattice strain reaching ∼ 1%. With further increasing stress, the two-dimensional modulated premartensite transforms to the five-layered modulated martensite. The observation of the stress-induced dimensionality crossover of atomic modulation has broad impacts in understanding not only the mechanical properties of advanced shape memory alloys but also the physical properties of condensed matter with heterogeneous structures.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.fg Shape-memory effect; yield stress; superelasticity
62.20.dq Other elastic constants
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions
81.40.Lm Deformation, plasticity, and creep

Thermocapillary-assisted pulling of thin films: Application to molten metals

Benoit Scheid, Ernst A. van Nierop, and Howard A. Stone

Appl. Phys. Lett. 97, 171906 (2010); http://dx.doi.org/10.1063/1.3505523 (3 pages) | Cited 1 time

Online Publication Date: 27 October 2010

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We study the thermocapillary stabilization of a free liquid film as it is formed by being pulled out of a bath at constant speed. For sufficiently large stresses induced at the interface through a controlled temperature gradient, a continuous film of liquid can be processed. For negligible inertial effects, the film thickness only depends on the capillary length and on the strength of the surface tension variation. The theory suggests that very thin ribbons or foils of molten material can be drawn out of a melt over a wide range of thicknesses and at speeds relevant to manufacturing.
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68.15.+e Liquid thin films
68.03.Cd Surface tension and related phenomena

Optical spin-filtering effect in charged InAs/GaAs quantum dots

M. W. Taylor, E. Harbord, P. Spencer, E. Clarke, G. Slavcheva, and R. Murray

Appl. Phys. Lett. 97, 171907 (2010); http://dx.doi.org/10.1063/1.3506507 (3 pages) | Cited 1 time

Online Publication Date: 27 October 2010

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We present time resolved photoluminescence results using nonresonant polarized light which show that the electron spin-flip time is much longer than the recombination time for an ensemble of p-doped InAs/GaAs quantum dots. Under continuous wave excitation the degree of optical polarization of the ground state is found to be around 10%. However, the excited state polarization is twice this value. We attribute this effect to Pauli blocking of the injected spin population captured into the dots and show that the effect persists up to room temperature. For resonant excitation, values are nearly doubled in accordance with increased spin injection efficiency.
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72.25.Dc Spin polarized transport in semiconductors
78.55.Cr III-V semiconductors
78.47.jd Time resolved luminescence
78.67.Hc Quantum dots
73.63.Kv Quantum dots

Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films

Yuwei Li, Vladimir A. Stoica, Lynn Endicott, Guoyu Wang, Ctirad Uher, and Roy Clarke

Appl. Phys. Lett. 97, 171908 (2010); http://dx.doi.org/10.1063/1.3499742 (3 pages) | Cited 8 times

Online Publication Date: 28 October 2010

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We performed time-resolved reflectivity measurements to monitor changes in optical phonon modes in Sb2Te3 thin films under femtosecond laser irradiation. We found that a phonon mode at 3.64 THz appears after high-fluence laser irradiation, in addition to the phonon modes of Sb2Te3. We determined that the additional mode is due to Te segregation as a result of laser-induced decomposition of the Sb2Te3 film. This experiment clearly illustrates the irreversible effects of femtosecond laser irradiation during the measurement of coherent optical phonon dynamics in Sb2Te3.
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63.20.dd Measurements
78.66.Li Other semiconductors
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.47.jg Time resolved reflection spectroscopy
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail

Appl. Phys. Lett. 97, 171909 (2010); http://dx.doi.org/10.1063/1.3503972 (3 pages) | Cited 9 times

Online Publication Date: 28 October 2010

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We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000–1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.48.Gh Structure of graphene
73.61.Wp Fullerenes and related materials

Resolving ensembled microstructural information of bulk-metallic-glass-matrix composites using synchrotron x-ray diffraction

J. W. Qiao, E. W. Huang, F. Jiang, T. Ungár, G. Csiszár, L. Li, Y. Ren, P. K. Liaw, and Y. Zhang

Appl. Phys. Lett. 97, 171910 (2010); http://dx.doi.org/10.1063/1.3506694 (3 pages) | Cited 2 times

Online Publication Date: 29 October 2010

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The microstructural characterization of the Zr60.0Ti14.7Nb5.3Cu5.6Ni4.4Be10.0 bulk-metallic-glass-matrix composites is investigated using high-energy synchrotron x-ray diffraction. The convoluted diffraction-intensity distribution in the azimuthal direction is naturally yielded from the spatial arrangements of the crystalline dendrites and their amorphous matrix. We facilitate the area selection and the intensity integration of the diffraction collected from a two-dimensional detector to characterize the diffraction intensity of the amorphous matrix. The results enable us to apply the modified Williamson–Hall plots for using the peak width to study the microstrain and micromechanism of the deformation of the crystalline phase.
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61.43.Fs Glasses
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Melting, thermal expansion, and the Lindemann rule for elemental substances

A. V. Granato, D. M. Joncich, and V. A. Khonik

Appl. Phys. Lett. 97, 171911 (2010); http://dx.doi.org/10.1063/1.3507897 (3 pages) | Cited 14 times

Online Publication Date: 29 October 2010

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An interpretation of a long-standing problem—the Lindemann melting rule—has been suggested within the framework of the interstitialcy theory. Melting is considered to be due to the rapid generation of thermodynamically equilibrium defects—dumbbell interstitials, which drastically decrease the shear modulus at the melting point. An analytical expression for the relationship between the thermal expansion coefficient and melting temperature coinciding with the Lindemann melting rule has been derived. The obtained results agree with available data on elemental substances. A correlation between the melting temperature and shear modulus has been discovered and explained within the framework of the same approach.
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64.70.dj Melting of specific substances
65.40.De Thermal expansion; thermomechanical effects
61.72.jj Interstitials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli

InAs critical-point energies at 22 K from spectroscopic ellipsometry

Tae Jung Kim, Jae Jin Yoon, Soon Yong Hwang, Yong Woo Jung, Tae Ho Ghong, Young Dong Kim, HyeJung Kim, and Yia-Chung Chang

Appl. Phys. Lett. 97, 171912 (2010); http://dx.doi.org/10.1063/1.3506497 (3 pages) | Cited 2 times

Online Publication Date: 29 October 2010

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We report dielectric function data from 0.74 to 6.54 eV for InAs at 22 K, obtained by spectroscopic ellipsometry. Critical-point (CP) structures are blueshifted and significantly sharpened relative to those seen at room-temperature (RT). The E0′, E2Δ, E2, E0′+Δ0′, and E2′ features in the E2 energy range of 4.0 to 5.6 eV cannot be resolved at RT but are clearly separated at 22 K. The energies of the CPs giving rise to these structures are determined by line shape fitting to numerically calculated second energy derivatives, and their Brillouin-zone locations identified by band structure calculations using the linear augmented Slater-type orbital method.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.20.kd Phonon-electron interactions
71.20.Nr Semiconductor compounds
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
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Low-temperature conductance oscillations in junctionless nanowire transistors

Jong-Tae Park, Jin Young Kim, Chi-Woo Lee, and Jean-Pierre Colinge

Appl. Phys. Lett. 97, 172101 (2010); http://dx.doi.org/10.1063/1.3506899 (2 pages) | Cited 6 times

Online Publication Date: 25 October 2010

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Junctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multigate metal-oxide-semiconductor field-effect devices. Clear oscillations are observed at 77 K at a drain voltage of 100 mV in devices with a 10×10 nm2 cross section.
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85.30.Tv Field effect devices
81.07.Gf Nanowires

Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

Zuoguang Liu and T. P. Ma

Appl. Phys. Lett. 97, 172102 (2010); http://dx.doi.org/10.1063/1.3506904 (3 pages)

Online Publication Date: 25 October 2010

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In this letter, we show a method to extract valuable information about electronic traps from inelastic electron tunneling spectroscopy (IETS) obtained on a metal-oxide-semiconductor gate stack with ultrathin gate dielectrics. The trap information extracted from the IETS spectrum includes its location, spatial distribution, and energy distribution.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.55.-g Dielectric thin films

Ultrafast control of inelastic tunneling in a double semiconductor quantum well

Michael Schüler, Yaroslav Pavlyukh, and Jamal Berakdar

Appl. Phys. Lett. 97, 172103 (2010); http://dx.doi.org/10.1063/1.3505502 (3 pages)

Online Publication Date: 25 October 2010

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In a semiconductor-based double quantum well (QW) coupled to a degree of freedom with an internal dynamics, we demonstrate that the electronic motion is controllable within femtoseconds by appropriately shaped electromagnetic pulses. For a pulse-driven AlxGa1−xAs based symmetric double QW coupled to uniformly distributed or localized vibrational modes analytical results can be obtained if only the lowest two energy levels are considered. These predictions are generalized by full-fledged numerical simulations showing that localization and time-stabilization of the driven electron dynamics is indeed possible under the conditions identified here, even with simultaneous excitation of vibrational modes.
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73.63.Hs Quantum wells
72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
73.40.Gk Tunneling
63.22.Np Layered systems
63.20.Pw Localized modes

Effect of twin spacing on the growth velocity of Si faceted dendrites

Xinbo Yang, Kozo Fujiwara, Raira Gotoh, Kensaku Maeda, Jun Nozawa, Haruhiko Koizumi, and Satoshi Uda

Appl. Phys. Lett. 97, 172104 (2010); http://dx.doi.org/10.1063/1.3501974 (3 pages) | Cited 4 times

Online Publication Date: 26 October 2010

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The growth velocity of silicon 〈110〉 faceted dendrites as a function of the twin spacing was investigated by in situ observation. As the twin spacing increases, 〈110〉 dendrite growth velocity nonlinearly decreases. The theoretical 〈110〉 and 〈112〉 dendrite growth velocities were calculated on the basis of the modified re-entrant corner model, and the theoretical growth velocity of 〈112〉 dendrites was found to be slower than that of 〈110〉 dendrites under the same twin spacing. The theoretical 〈110〉 dendrite growth velocity fits quite well with the experimental results.
Show PACS
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.05.Cy Elemental semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.Mm Grain and twin boundaries
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