Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Kolbe, Tim; Knauer, Arne; Chua, Chris; Yang, Zhihong; Einfeldt, Sven; Vogt, Patrick; Johnson, Noble M.; Weyers, Markus; Kneissl, Michael

doi:doi:10.1063/1.3506585

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Highly photostable organic distributed feedback laser emitting at 573 nm

An efficient, low-cost, and highly photostable second-order distributed feedback (DFB) laser, fabricated by thermal nanoimprint lithography and based on a polymer active film containing a perylenediimide derivative, is reported. It shows a photostability half-life of 3.1×105 pump pulses (>8 h), when pumped at the same spot of the film. This value is the highest reported to date for organic DFB lasers measured under ambient conditions. The device emits at 573 nm, matching the second low-loss ...

Position controlled nanowires for infrared single photon emission

We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum dots show narrow emission lines. Superconducting single photon detectors, which have a higher sensitivity than avalanche photodiodes in the infrared, enabl...

The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range has been investigated. The intensity for transverse-electric polarized light relative to the transverse-magnetic polarized light decreases with decreasing emission wavelength. This effect is attributed to rearrangement of the valence bands at the Γ-point of the Brillouin zone with changing aluminum and indium mole fractions in the (In)(Al)GaN quantum wells. For shorter wavelength the crystal-field split-off hole band moves closer to the conduction band relative to the heavy and light hole bands and as a consequence the transverse-magnetic polarized emission becomes more dominant for deep ultraviolet light emitting diodes.

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KEYWORDS and PACS

Keywords

aluminium compounds, conduction bands, electroluminescence, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, light polarisation, quantum well devices, spectral line shift, valence bands, wide band gap semiconductors

PACS

85.60.Jb

Light-emitting devices
85.35.Be

Quantum well devices (quantum dots, quantum wires, etc.)

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http://dx.doi.org/10.1063/1.3506585

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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