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Applied Physics Letters / Volume 97 / Issue 17 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 171903 (2010); http://dx.doi.org/10.1063/1.3504257 (3 pages)

Electronic structure of cleaved InAsP/InP(001) quantum dots measured by scanning tunneling spectroscopy

B. Fain, J. C. Girard, D. Elvira, C. David, G. Beaudoin, A. Beveratos, I. Robert-Philip, I. Sagnes, and Z. Z. Wang

Laboratoire de Photonique et Nanostructures LPN-CNRS, UPR-20, Route de Nozay, 91460 Marcoussis, France

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(Received 16 July 2010; accepted 30 September 2010; published online 25 October 2010)

We investigate the structural and electronic properties of cleaved InAsP quantum dots grown by metal organic chemical vapor deposition on a (001) InP substrate by means of cross-sectional scanning tunneling microscopy and spectroscopy. We performed spatially and energetically resolved differential conductance measurements on several dots and thus mapped their electronic wave functions. Five distinct quantum dot energy levels are identified, all of them strongly confined inside the quantum dot. We further discuss the structural characteristics inferred from topographical images in the specific case of parallelogram-based InAsP/InP(001) quantum dots as a mean of investigating the size of a buried quantum dot.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, MOCVD, scanning tunnelling microscopy, scanning tunnelling spectroscopy, semiconductor quantum dots, wave functions

PACS

  • 71.20.Nr

    Semiconductor compounds

  • 73.21.La

    Quantum dots

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3504257

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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