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Appl. Phys. Lett. 97, 171904 (2010); http://dx.doi.org/10.1063/1.3506498 (3 pages)

Mechanical response of GaN film and micropillar under nanoindentation and microcompression

T. H. Sung1, J. C. Huang1, J. H. Hsu1, and S. R. Jian2

1Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
2Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan

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(Received 7 August 2010; accepted 6 October 2010; published online 26 October 2010)

The mechanical properties of GaN are examined by microcompression. The Young’s modulus and compressive yield stress in microscale are directly measured to be ∼ 226 and 10 GPa, comparable to the modulus ( ∼ 272 GPa) and hardness (15 GPa) measured by nanoindentation. The Raman spectrum measurements and transmission electron microscopy observations reveal that the residual stress in deposited film can be largely released in the form of micropillar. Upon microcompression, the strain energy is basically stored by dislocation and defect accumulation, with minimum residual stress regeneration. The small bending of the c-axis of the GaN micropillar upon compression would affect its optical performance.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.40.Np

    Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 81.40.Jj

    Elasticity and anelasticity, stress-strain relations

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 68.60.Bs

    Mechanical and acoustical properties

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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