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Applied Physics Letters / Volume 97 / Issue 17 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 97, 171907 (2010); http://dx.doi.org/10.1063/1.3506507 (3 pages)

Optical spin-filtering effect in charged InAs/GaAs quantum dots

M. W. Taylor, E. Harbord, P. Spencer, E. Clarke, G. Slavcheva, and R. Murray

Department of Physics, The Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ, United Kingdom

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(Received 10 September 2010; accepted 6 October 2010; published online 27 October 2010)

We present time resolved photoluminescence results using nonresonant polarized light which show that the electron spin-flip time is much longer than the recombination time for an ensemble of p-doped InAs/GaAs quantum dots. Under continuous wave excitation the degree of optical polarization of the ground state is found to be around 10%. However, the excited state polarization is twice this value. We attribute this effect to Pauli blocking of the injected spin population captured into the dots and show that the effect persists up to room temperature. For resonant excitation, values are nearly doubled in accordance with increased spin injection efficiency.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

excited states, gallium arsenide, ground states, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, spin polarised transport, time resolved spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3506507

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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