Coherent optical phonon spectroscopy studies of femtosecond-laser modified Sb2Te3 films

Li, Yuwei; Stoica, Vladimir A.; Endicott, Lynn; Wang, Guoyu; Uher, Ctirad; Clarke, Roy

doi:doi:10.1063/1.3499742

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Optical spin-filtering effect in charged InAs/GaAs quantum dots

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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

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We performed time-resolved reflectivity measurements to monitor changes in optical phonon modes in Sb₂Te₃ thin films under femtosecond laser irradiation. We found that a phonon mode at 3.64 THz appears after high-fluence laser irradiation, in addition to the phonon modes of Sb₂Te₃. We determined that the additional mode is due to Te segregation as a result of laser-induced decomposition of the Sb₂Te₃ film. This experiment clearly illustrates the irreversible effects of femtosecond laser irradiation during the measurement of coherent optical phonon dynamics in Sb₂Te₃.

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KEYWORDS and PACS

Keywords

laser beam effects, phonon spectra, photodissociation, reflectivity, selenium compounds, semiconductor epitaxial layers, semiconductor materials, time resolved spectra

PACS

63.20.dd

Measurements
78.66.Li

Other semiconductors
82.50.Hp

Processes caused by visible and UV light
61.80.Ba

Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.47.jg

Time resolved reflection spectroscopy
78.40.-q

Absorption and reflection spectra: visible and ultraviolet

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3499742

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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