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Appl. Phys. Lett. 97, 171909 (2010); http://dx.doi.org/10.1063/1.3503972 (3 pages)
Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
(Received 14 July 2010; accepted 29 September 2010; published online 28 October 2010)
© 2010 American Institute of Physics
RELATED DATABASES
KEYWORDS and PACS
Keywords
annealing, chemical vapour deposition, graphene, low energy electron diffraction, X-ray photoelectron spectra
PACS
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Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Other heat and thermomechanical treatments
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Photoemission and photoelectron spectra
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Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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Structure of graphene
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Fullerenes and related materials
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