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Appl. Phys. Lett. 97, 171912 (2010); http://dx.doi.org/10.1063/1.3506497 (3 pages)

InAs critical-point energies at 22 K from spectroscopic ellipsometry

Tae Jung Kim1, Jae Jin Yoon1, Soon Yong Hwang1, Yong Woo Jung1, Tae Ho Ghong1, Young Dong Kim1, HyeJung Kim2,3, and Yia-Chung Chang2

1Department of Physics, Nano-Optical Property Laboratory, Kyung Hee University, Seoul 130-701, Republic of Korea
2Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan
3Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

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(Received 9 July 2010; accepted 30 September 2010; published online 29 October 2010)

We report dielectric function data from 0.74 to 6.54 eV for InAs at 22 K, obtained by spectroscopic ellipsometry. Critical-point (CP) structures are blueshifted and significantly sharpened relative to those seen at room-temperature (RT). The E0, E2Δ, E2, E00, and E2 features in the E2 energy range of 4.0 to 5.6 eV cannot be resolved at RT but are clearly separated at 22 K. The energies of the CPs giving rise to these structures are determined by line shape fitting to numerically calculated second energy derivatives, and their Brillouin-zone locations identified by band structure calculations using the linear augmented Slater-type orbital method.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 63.20.kd

    Phonon-electron interactions

  • 71.20.Nr

    Semiconductor compounds

  • 71.15.Ap

    Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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