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Applied Physics Letters / Volume 97 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 172102 (2010); http://dx.doi.org/10.1063/1.3506904 (3 pages)

Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

Zuoguang Liu and T. P. Ma

Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA

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(Received 30 June 2010; accepted 7 October 2010; published online 25 October 2010)

In this letter, we show a method to extract valuable information about electronic traps from inelastic electron tunneling spectroscopy (IETS) obtained on a metal-oxide-semiconductor gate stack with ultrathin gate dielectrics. The trap information extracted from the IETS spectrum includes its location, spatial distribution, and energy distribution.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dielectric thin films, electron traps, MIS structures, tunnelling spectroscopy

PACS

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 77.55.-g

    Dielectric thin films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3506904

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    W. He and T. P. Ma, Appl. Phys. Lett. 83, 2605 (2003)APPLAB000083000013002605000001.

    W. He and T. P. Ma, Appl. Phys. Lett. 83, 5461 (2003)APPLAB000083000026005461000001.

    M. Wang, W. He, and T. P. Ma, Appl. Phys. Lett. 86, 192113 (2005)APPLAB000086000019192113000001.

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    M. Specht, M. Stadele, S. Jakschik, and U. Schroder, Appl. Phys. Lett. 84, 3076 (2004)APPLAB000084000016003076000001.


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