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Applied Physics Letters / Volume 97 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 172103 (2010); http://dx.doi.org/10.1063/1.3505502 (3 pages)

Ultrafast control of inelastic tunneling in a double semiconductor quantum well

Michael Schüler, Yaroslav Pavlyukh, and Jamal Berakdar

Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle, Germany

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(Received 31 August 2010; accepted 4 October 2010; published online 25 October 2010)

In a semiconductor-based double quantum well (QW) coupled to a degree of freedom with an internal dynamics, we demonstrate that the electronic motion is controllable within femtoseconds by appropriately shaped electromagnetic pulses. For a pulse-driven AlxGa1−xAs based symmetric double QW coupled to uniformly distributed or localized vibrational modes analytical results can be obtained if only the lowest two energy levels are considered. These predictions are generalized by full-fledged numerical simulations showing that localization and time-stabilization of the driven electron dynamics is indeed possible under the conditions identified here, even with simultaneous excitation of vibrational modes.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electron mobility, gallium arsenide, III-V semiconductors, localised modes, numerical analysis, semiconductor quantum wells, tunnelling

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3505502

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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