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Applied Physics Letters / Volume 97 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 172104 (2010); http://dx.doi.org/10.1063/1.3501974 (3 pages)

Effect of twin spacing on the growth velocity of Si faceted dendrites

Xinbo Yang, Kozo Fujiwara, Raira Gotoh, Kensaku Maeda, Jun Nozawa, Haruhiko Koizumi, and Satoshi Uda

Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

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(Received 30 August 2010; accepted 22 September 2010; published online 26 October 2010)

The growth velocity of silicon 〈110〉 faceted dendrites as a function of the twin spacing was investigated by in situ observation. As the twin spacing increases, 〈110〉 dendrite growth velocity nonlinearly decreases. The theoretical 〈110〉 and 〈112〉 dendrite growth velocities were calculated on the basis of the modified re-entrant corner model, and the theoretical growth velocity of 〈112〉 dendrites was found to be slower than that of 〈110〉 dendrites under the same twin spacing. The theoretical 〈110〉 dendrite growth velocity fits quite well with the experimental results.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal growth from melt, dendrites, elemental semiconductors, semiconductor growth, silicon, twinning

PACS

  • 68.70.+w

    Whiskers and dendrites (growth, structure, and nonelectronic properties)

  • 81.05.Cy

    Elemental semiconductors

  • 81.10.Fq

    Growth from melts; zone melting and refining

  • 61.72.Mm

    Grain and twin boundaries

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3501974

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    K. Fujiwara, H. Fukuda, N. Usami, N. Nakajima, and S. Uda, Phys. Rev. B 81, 224106 (2010).


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