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Applied Physics Letters / Volume 97 / Issue 17 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 173104 (2010); http://dx.doi.org/10.1063/1.3506584 (3 pages)

Write strategies for multiterabit per square inch scanned-probe phase-change memories

C. D. Wright1, P. Shah1, Lei Wang1, M. M. Aziz1, A. Sebastian2, and H. Pozidis2

1College of Engineering, Mathematics and Physical Sciences, University of Exeter, Devon EX4 4QF, England
2IBM Zurich Research Laboratory, Saumerstrasse 4, CH-8803 Rueschlikon, Switzerland

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(Received 30 July 2010; accepted 7 October 2010; published online 25 October 2010)

A mark-length write strategy for multiterabit per square inch scanned-probe memories is described that promises to increase the achievable user density by at least 50%, and potentially up to 100% or more, over conventional approaches. The viability of the write strategy has been demonstrated by experimental scanning probe write/read measurements on phase-change (GeSbTe) media. The advantages offered by adopting mark-length recording are likely to be equally applicable to other forms of scanned probe storage.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

phase change memories

PACS

  • 85.40.-e

    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

  • 89.20.Kk

    Engineering

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3506584

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    H. Bhaskaran, A. Sebastian, A. Pauza, H. Pozidis, and M. Despont, Rev. Sci. Instrum. 80, 083701 (2009)RSINAK000080000008083701000001.

    H. Satoh, K. Sugawara, and K. Tanaka, J. Appl. Phys. 99, 024306 (2006)JAPIAU000099000002024306000001.

    N. Tayebi, Y. Narui, R. J. Chen, C. P. Collier, K. P. Giapis, and Y. Zhang, Appl. Phys. Lett. 93, 103112 (2008)APPLAB000093000010103112000001.


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