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Applied Physics Letters / Volume 97 / Issue 17 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 173108 (2010); http://dx.doi.org/10.1063/1.3505358 (3 pages)

Ultrafast electrical charging and discharging of a single InGaAs quantum dot

J. Nannen1, T. Kümmell1, M. Bartsch2, K. Brunner3, and G. Bacher1

1Werkstoffe der Elektrotechnik und CeNIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany
2Experimentalphysik und CeNIDE, Universität Duisburg-Essen, Lotharstraße 1, 47048 Duisburg, Germany
3Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

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(Received 13 July 2010; accepted 5 October 2010; published online 27 October 2010; publisher error corrected 29 October 2010)

We report on ultrafast control of the charge state of a single InGaAs quantum dot in a charge-tunable p-i-n diode structure. Focused ion beam etching is employed to decrease the capacitance of the device to enable radio frequency operation. A time-resolved photoluminescence technique is demonstrated that allows monitoring the charge state with a time-resolution which is limited only by the radiative lifetime of the charged and neutral exciton, respectively. Experimental data show that the charge state can be manipulated on time scales shorter than the radiative lifetime of approximately 1.4 ns.

© 2010 American Institute of Physics

EDITORIALLY RELATED

  1. Publisher's Note: “Ultrafast electrical charging and discharging of a single InGaAs quantum dot” [Appl. Phys. Lett. 97, 173108 (2010)]
    J. Nannen et al.
    Appl. Phys. Lett. 97, 249901 (2010)APPLAB000097000024249901000001

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KEYWORDS and PACS

Keywords

excitons, focused ion beam technology, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, p-i-n diodes, radiative lifetimes, semiconductor quantum dots, sputter etching

PACS

  • 73.61.Ey

    III-V semiconductors

  • 78.55.Cr

    III-V semiconductors

  • 71.35.-y

    Excitons and related phenomena

  • 73.20.Mf

    Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 81.65.Mq

    Oxidation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3505358

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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