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Appl. Phys. Lett. 97, 182102 (2010); http://dx.doi.org/10.1063/1.3513826 (3 pages)

Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

J. Qi1,2, X. Chen1, W. Yu1, P. Cadden-Zimansky2, D. Smirnov2, N. H. Tolk3, I. Miotkowski4, H. Cao4, Y. P. Chen4, Y. Wu5, S. Qiao5, and Z. Jiang1

1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
2National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
3Department of Physics, Vanderbilt University, Nashville, Tennessee 37235, USA
4Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
5Department of Physics, Fudan University, Shanghai 200433, People's Republic of China

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(Received 11 September 2010; accepted 19 October 2010; published online 1 November 2010)

Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron–phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 63.20.kd

    Phonon-electron interactions

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 78.47.jg

    Time resolved reflection spectroscopy

  • 71.38.-k

    Polarons and electron-phonon interactions

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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