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1 Nov 2010

Volume 97, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 97, 183105 (2010); http://dx.doi.org/10.1063/1.3506485 (3 pages)

Z. H. Zhang, X. Q. Deng, X. Q. Tan, M. Qiu, and J. B. Pan
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A microfluidic device with integrated optics for microparticle switching

Siew-Kit Hoi, Zhi-Bin Hu, Yuanjun Yan, Chorng-Haur Sow, and Andrew A. Bettiol

Appl. Phys. Lett. 97, 183501 (2010); http://dx.doi.org/10.1063/1.3512902 (3 pages)

Online Publication Date: 3 November 2010

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We report a high efficiency and noninvasive microfluidic particle switching device with integrated optical microstructures. Microfluidic channels are combined with a cylindrical microlens and an optical fiber to achieve on-chip optical switching of colloidal particles without the need for an optical microscope. A laser beam is coupled into an optical fiber and redirected by the microlens. The angle of incidence of the optical force can be changed by varying the position of the optical fiber relative to the microlens. Under certain circumstances, a switching efficiency approaching 100% was achieved with a relatively fast response time for a solution containing 10 μm polystyrene spheres.
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42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.-i Fiber optics
47.85.Np Fluidics

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, and Sang-Hee Ko Park

Appl. Phys. Lett. 97, 183502 (2010); http://dx.doi.org/10.1063/1.3510471 (3 pages) | Cited 19 times

Online Publication Date: 3 November 2010

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We investigated the visible photon accelerated negative bias instability (NBI) in amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift in transfer curves with insignificant changes in field-effect mobility and subthreshold swing was observed. On the other hand, there is substantial change in capacitance-voltage characteristics caused by created subgap states. The suggested nature of created states is the ionized oxygen vacancy (VO2+) by the combination of visible light and negative bias. The generated VO2+ states enhance the NBI under illumination as increased deep hole trapping centers. Furthermore, the photoexcitation of VO to stable VO2+ yields excess free carriers in conduction band. The increased carrier density also enhances the negative shift in turn-on voltage of a-IGZO TFT.
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85.30.Tv Field effect devices

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

Jang-Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Jin-Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, and Sang Yoon Lee

Appl. Phys. Lett. 97, 183503 (2010); http://dx.doi.org/10.1063/1.3513400 (3 pages) | Cited 13 times

Online Publication Date: 4 November 2010

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This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf–In–Zn–O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.
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85.30.Tv Field effect devices

Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Pradipta K. Nayak, Tito Busani, Elangovan Elamurugu, Pedro Barquinha, Rodrigo Martins, Yongtaek Hong, and Elvira Fortunato

Appl. Phys. Lett. 97, 183504 (2010); http://dx.doi.org/10.1063/1.3514249 (3 pages) | Cited 2 times

Online Publication Date: 4 November 2010

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The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2/V s with an Ion/Ioff ratio of 6×107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.
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85.30.Tv Field effect devices

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

A. Descoeudres, L. Barraud, R. Bartlome, G. Choong, Stefaan De Wolf, F. Zicarelli, and C. Ballif

Appl. Phys. Lett. 97, 183505 (2010); http://dx.doi.org/10.1063/1.3511737 (3 pages) | Cited 5 times

Online Publication Date: 5 November 2010

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In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.
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88.40.jj Silicon solar cells

Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications

E. K. Chua, L. P. Shi, R. Zhao, K. G. Lim, T. C. Chong, T. E. Schlesinger, and J. A. Bain

Appl. Phys. Lett. 97, 183506 (2010); http://dx.doi.org/10.1063/1.3508954 (3 pages) | Cited 3 times

Online Publication Date: 5 November 2010

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A GeTe reconfigurable phase change switch for radio frequency applications is presented. Low ON state resistance (180 Ω) and large dynamic range (7×103 X) were achieved through low resistance electrode design and high current. A partial crystallization and partial reamorphization model is proposed to explain the differences between the measured and calculated device ON (set) and OFF (reset) state resistances, respectively. The dependency between ON state resistance and reset current was estimated using a first order thermal design in steady state which suggests lower reset current by choosing materials of lower melting temperature and structures with better thermal isolation.
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85.30.-z Semiconductor devices
64.70.kg Semiconductors
84.32.Dd Connectors, relays, and switches
73.61.Jc Amorphous semiconductors; glasses

Optically controlled holographic beam splitter

Luciano De Sio, Alessandro Tedesco, Nelson Tabirian, and Cesare Umeton

Appl. Phys. Lett. 97, 183507 (2010); http://dx.doi.org/10.1063/1.3513289 (3 pages) | Cited 1 time

Online Publication Date: 5 November 2010

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We present the results of realization and study of a light beam splitting effect based on a full-optically controlled holographic diffraction grating. The high quality, light responsive, periodic structure, which is exploited as tunable beam splitter, is monitored by combining its zero and first diffracted orders in a Mach–Zehnder geometry interferometer. The interference pattern exhibits a dependence of the fringe visibility on the external optical pump power utilized to drive the splitting effect. The visibility, characterized by means of a standard pump-probe optical setup, reveals a strong dependence on the polarization of the probe radiation and on its incident angle as well. The effect is reversible and repeatable, and shows a continuously adjustable fringe visibility in the range 0.94–0.2, with response times in the millisecond range.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Fm Reflectors, beam splitters, and deflectors
07.60.Ly Interferometers

The investigation of charge loss mechanism in a two-bit wrapped-gate nitride storage nonvolatile memory

Y. H. Ho, Steve S. Chung, and H. H. Chen

Appl. Phys. Lett. 97, 183508 (2010); http://dx.doi.org/10.1063/1.3508956 (3 pages)

Online Publication Date: 5 November 2010

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The charge loss mechanism of a two-bit wrapped-gate nitride storage nonvolatile memory is investigated. From retention measurements, it was shown that both vertical and lateral charge loss coexist. As a result of the misalignment of carriers, the lateral charge loss was caused by the hole accumulation near the junction and migrating toward the channel. By using a scaling of the word-gate length or a substrate-transient hot hole erase scheme, the charge loss in the lateral direction can be suppressed. Also, from the retention test, the latter scheme, substrate-transient hot hole (STHH), has a window independent of the word-gate length, which is better for the device scaling.
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84.30.Sk Pulse and digital circuits
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