APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Nov 2010

Volume 97, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 183105 (2010); http://dx.doi.org/10.1063/1.3506485 (3 pages)

Z. H. Zhang, X. Q. Deng, X. Q. Tan, M. Qiu, and J. B. Pan
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Efficient parametric amplification in high and very high frequency piezoelectric nanoelectromechanical systems

R. B. Karabalin, S. C. Masmanidis, and M. L. Roukes

Appl. Phys. Lett. 97, 183101 (2010); http://dx.doi.org/10.1063/1.3505500 (3 pages) | Cited 5 times

Online Publication Date: 1 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Parametric amplification in nanomechanical structures is demonstrated by modulating a purely intrinsic mechanical parameter of the system—the stress—via piezoelectric electromechanical coupling. Large resonance amplitude and quality factor enhancement due to parametric pumping are observed under both vacuum and ambient pressure conditions. Exploration of the region of parametric instability yields results that agree with parametric amplification theory.
Show PACS
85.35.-p Nanoelectronic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Plasmon modes of silver nanowire on a silica substrate

C.-L. Zou, F.-W. Sun, Y.-F. Xiao, C.-H. Dong, X.-D. Chen, J.-M. Cui, Q. Gong, Z.-F. Han, and G.-C. Guo

Appl. Phys. Lett. 97, 183102 (2010); http://dx.doi.org/10.1063/1.3509415 (3 pages) | Cited 5 times

Online Publication Date: 1 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Plasmon mode in a silver nanowire is theoretically studied when the nanowire is placed on or near a silica substrate. It is found that the substrate has much influence on the plasmon mode. For the nanowire on the substrate, the plasmon (hybrid) mode possesses not only a long propagation length but also an ultrasmall mode area. From the experimental point of view, this cavity-free structure holds a great potential to study a strong coherent interaction between the plasmon mode and single quantum system (for example, quantum dots) embedded in the substrate.
Show PACS
73.22.Lp Collective excitations
78.67.Uh Nanowires
73.21.Hb Quantum wires
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Graphene synthesis by ion implantation

Slaven Garaj, William Hubbard, and J. A. Golovchenko

Appl. Phys. Lett. 97, 183103 (2010); http://dx.doi.org/10.1063/1.3507287 (3 pages) | Cited 7 times

Online Publication Date: 2 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate.
Show PACS
81.05.ue Graphene
61.48.Gh Structure of graphene
61.72.up Other materials
81.40.Gh Other heat and thermomechanical treatments
78.30.Na Fullerenes and related materials
78.67.Wj Optical properties of graphene

Highly stacked and well-aligned In0.4Ga0.6As quantum dot solar cells with In0.2Ga0.8As cap layer

T. Sugaya, S. Furue, H. Komaki, T. Amano, M. Mori, K. Komori, S. Niki, O. Numakami, and Y. Okano

Appl. Phys. Lett. 97, 183104 (2010); http://dx.doi.org/10.1063/1.3507390 (3 pages) | Cited 3 times

Online Publication Date: 2 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report In0.4Ga0.6As quantum dot (QD) solar cells with In0.2Ga0.8As cap layers, which extends the photoabsorption spectra toward a wavelength longer than those of In0.4Ga0.6As QD solar cells without cap layers. Well-aligned 50-stack In0.4Ga0.6As QD structures with In0.2Ga0.8As cap layers can be grown without using a strain balancing technique. The photoluminescence wavelength of ten-stack In0.4Ga0.6As QDs with an In0.2Ga0.8As cap layer becomes longer, as a result of the reduced strain in the QDs achieved by using the cap layer. The cell characteristics of multistacked In0.4Ga0.6As QD solar cells are improved by employing In0.2Ga0.8As cap layers.
Show PACS
88.40.jm Thin film III-V and II-VI based solar cells
78.67.Hc Quantum dots
81.07.Ta Quantum dots
78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Examinations into the contaminant-induced transport instabilities in a molecular device

Z. H. Zhang, X. Q. Deng, X. Q. Tan, M. Qiu, and J. B. Pan

Appl. Phys. Lett. 97, 183105 (2010); http://dx.doi.org/10.1063/1.3506485 (3 pages) | Cited 2 times

Online Publication Date: 2 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report first-principles calculations of transport behaviors for a molecular device whose electrode surface is contaminated by various diatomic groups. It has been found that such a device demonstrates less transport variations for the contamination of the group PO or SO in the whole bias range but it shows more transport variations for contamination of the group CN, HS, or NO only under low bias, which suggests that contamination of all diatomic groups studied here always affects high-bias transport properties of a device in an extremely gentle manner.
Show PACS
85.65.+h Molecular electronic devices
31.15.A- Ab initio calculations
31.15.ae Electronic structure and bonding characteristics

A high efficiency superconducting nanowire single electron detector

M. Rosticher, F. R. Ladan, J. P. Maneval, S. N. Dorenbos, T. Zijlstra, T. M. Klapwijk, V. Zwiller, A. Lupaşcu, and G. Nogues

Appl. Phys. Lett. 97, 183106 (2010); http://dx.doi.org/10.1063/1.3506692 (3 pages) | Cited 2 times

Online Publication Date: 3 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an efficiency approaching unity. The electron and photon detection efficiency map of the same device are in good agreement. We also observe detection events outside the active area of the device, which we attribute to sensitivity to backscattered electrons.
Show PACS
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.60.Dq Photometers, radiometers, and colorimeters
68.49.Jk Electron scattering from surfaces

Thermal conductivity prediction and analysis of few-quintuple Bi2Te3 thin films: A molecular dynamics study

Bo Qiu and Xiulin Ruan

Appl. Phys. Lett. 97, 183107 (2010); http://dx.doi.org/10.1063/1.3514252 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, we use molecular dynamics simulations to predict the thermal conductivities of perfect and nanoporous few-quintuple Bi2Te3 thin films. We find the dimensional crossover behavior of thermal transport and a minimum thermal conductivity at three quintuple layers at room temperature, and we attribute it to the interplay between phonon Umklapp scattering and boundary scattering. Also, nanoporous films show significantly reduced thermal conductivity compared to perfect thin films, indicating that they can be very promising thermoelectric materials.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

High frequency carbon nanomechanical resonators embedded with carbon nanotube stiffening layers

Seung Hoon Lee, Bumki Min, Seung S. Lee, Se Il Park, and Kwang-Cheol Lee

Appl. Phys. Lett. 97, 183108 (2010); http://dx.doi.org/10.1063/1.3511742 (3 pages) | Cited 1 time

Online Publication Date: 4 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present batch-fabricated carbon-based nanomechanical resonators which are laminated by a pyrolyzed carbon layer and single-walled carbon-nanotube network (C/CNT resonators). The embedded CNT layers simultaneously enhance the electrical conductivity ( ∼ 160-fold) and mechanical stiffness (10% higher Young’s modulus) compared to nonstiffened carbon-only resonators. Dynamic behaviors of the fabricated C/CNT and carbon-only resonators, including fundamental frequency, Q-factor, and frequency tuning characteristics show comparable performance to the silicon based resonators.
Show PACS
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.35.Kt Nanotube devices

Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

Libo Gao (高力波), Wencai Ren (任文才), Jinping Zhao (赵金平), Lai-Peng Ma (马来鹏), Zongping Chen (陈宗平), and Hui-Ming Cheng (成会明)

Appl. Phys. Lett. 97, 183109 (2010); http://dx.doi.org/10.1063/1.3512865 (3 pages) | Cited 2 times

Online Publication Date: 4 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H2 concentration. Without the presence of H2, continuous graphene films are obtained with a mean sheet resistance of <350 Ω/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.ue Graphene
78.66.Tr Fullerenes and related materials
78.40.Ri Fullerenes and related materials
73.61.Wp Fullerenes and related materials
68.55.ap Fullerenes

Ultrahigh-frequency nano-optomechanical resonators in slot waveguide ring cavities

Mo Li, W. H. P. Pernice, and H. X. Tang

Appl. Phys. Lett. 97, 183110 (2010); http://dx.doi.org/10.1063/1.3513213 (3 pages) | Cited 5 times

Online Publication Date: 4 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate integrated nano-optomechanical systems with driven flexural resonance up to 760 MHz in the ultrahigh frequency band. The mechanical element of the device is embedded in a slot waveguide racetrack optical resonator with an optical quality factor of 60 000. Displacement sensitivity of 0.45×10−15 m/math at 127 MHz is achieved in this circuit cavity configuration.
Show PACS
85.60.Bt Optoelectronic device characterization, design, and modeling
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Atomic resolution imaging at 2.5 GHz using near-field microwave microscopy

Jonghee Lee, Christian J. Long, Haitao Yang, Xiao-Dong Xiang, and Ichiro Takeuchi

Appl. Phys. Lett. 97, 183111 (2010); http://dx.doi.org/10.1063/1.3514243 (3 pages) | Cited 1 time

Online Publication Date: 4 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Atomic resolution imaging is demonstrated using a hybrid scanning tunneling/near-field microwave microscope. The microwave channels of the microscope correspond to the resonant frequency and quality factor of a coaxial microwave resonator, which is built in to the scan head. The microscope is capable of simultaneously recording the low frequency tunnel current (0–10 kHz) and the information from the microwave channels. When the tip-sample distance is within the tunneling regime, we obtain atomic resolution images using the microwave channels. We attribute this atomic contrast to gigahertz frequency current through the tunnel junction. Images of graphite and Au(111) are presented.
Show PACS
68.35.bd Metals and alloys
73.40.Gk Tunneling

Reversible ultraviolet light-manipulated superhydrophobic-to-superhydrophilic transition on a tubular SiC nanostructure film

H. Cui, G. Z. Yang, Y. Sun, and C. X. Wang

Appl. Phys. Lett. 97, 183112 (2010); http://dx.doi.org/10.1063/1.3510472 (3 pages) | Cited 1 time

Online Publication Date: 4 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the ultraviolet (UV) light-induced, reversible wettability behavior for tubular SiC nanostructure film. The as-synthesized tubular SiC nanostructure film shows the superhydrophilic nature with the water contact angle 152.4° and low sliding angle. Moreover, the surface transition between superhydrophobicity and superhydrophilicity can be easily achieved by the alternation of UV irradiation and closed thermal heating. A possible mechanism is also proposed to explain the reversible wettability behavior.
Show PACS
68.08.Bc Wetting
81.16.-c Methods of micro- and nanofabrication and processing
61.82.Fk Semiconductors
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.55.ag Semiconductors

The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

S. Nazir and U. Schwingenschlögl

Appl. Phys. Lett. 97, 183113 (2010); http://dx.doi.org/10.1063/1.3511684 (3 pages)

Online Publication Date: 5 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic and magnetic properties of the cubic pyrite CoS2/FeS2 interface are studied using the all-electron full-potential linearized augmented plane wave method. We find that this contact between a ferromagnetic metal and a nonmagnetic semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment is induced on the Fe atoms. Furthermore, at the interface ferromagnetic ordering is found to be energetically favorable as compared to antiferromagnetic ordering.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.20.At Surface states, band structure, electron density of states
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Ee Antiferromagnetics
75.50.Dd Nonmetallic ferromagnetic materials

Enhancement of the magnetic modulation of surface plasmon polaritons in Au/Co/Au films

Diana Martín-Becerra, Juan B. González-Díaz, Vasily V. Temnov, Alfonso Cebollada, Gaspar Armelles, Tim Thomay, Alfred Leitenstorfer, Rudolf Bratschitsch, Antonio García-Martín, and María Ujué González

Appl. Phys. Lett. 97, 183114 (2010); http://dx.doi.org/10.1063/1.3512874 (3 pages) | Cited 1 time

Online Publication Date: 5 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The deposition of a dielectric overlayer on top of Au/Co/Au multilayer films can significantly enhance the magnetic field induced modulation of the surface plasmon polariton (SPP) wave vector. This enhancement is analyzed as a function of the thickness of the dielectric overlayer and the associated SPP electromagnetic field confinement and redistribution. The decrease in SPP propagation distance is taken into account by analyzing an adequate figure of merit.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.21.Ac Multilayers
78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Theoretical description of superionic conductivities in samaria doped ceria based nanocomposites

Qinghua Liu and Bin Zhu

Appl. Phys. Lett. 97, 183115 (2010); http://dx.doi.org/10.1063/1.3513375 (3 pages)

Online Publication Date: 5 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Superionic conductivity becomes true based on recent developments on ceria-based nanocomposites as electrolytes with application for low temperature (300–600 °C) solid oxide fuel cells. We theoretically describe the superionic conductivity phenomena in samaria doped ceria nanocomposites. An improved effective-medium model was used to determine the ionic conductivity of the materials focusing on a core-shell structure of the as-prepared samaria doped ceria based composite particles. This work reveals the enhancement of ionic conductivity by interface proton and oxygen ion transportation in the composites, which agrees well with the experimental results.
Show PACS
66.30.H- Self-diffusion and ionic conduction in nonmetals
81.16.-c Methods of micro- and nanofabrication and processing
82.45.-h Electrochemistry and electrophoresis
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close