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1 Nov 2010

Volume 97, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 183105 (2010); http://dx.doi.org/10.1063/1.3506485 (3 pages)

Z. H. Zhang, X. Q. Deng, X. Q. Tan, M. Qiu, and J. B. Pan
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Dependence of glass forming ability on liquid fragility: Thermodynamics versus kinetics

Li-Min Wang, Yongjun Tian, and Riping Liu

Appl. Phys. Lett. 97, 181901 (2010); http://dx.doi.org/10.1063/1.3506900 (3 pages) | Cited 3 times

Online Publication Date: 1 November 2010

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The dependence of glass forming ability on liquid fragility is studied with thermodynamic and kinetic analyses. A general expression of the Gibbs free energy difference between an undercooled liquid and its equilibrium crystal is presented to address thermodynamically the fragility effect on glass formation. It is found that increasing fragility thermodynamically favors glass formation, remarkably contrasting with the fragility effect from the kinetic point of view. The dependences of glass forming ability on fragility in metallic alloys and molecular isomers are compared, and kinetics and thermodynamics of glass formation are, respectively, emphasized.
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64.70.pm Liquids
65.40.G- Other thermodynamical quantities

Experimental verification of negative refraction for a wedge-type negative index metamaterial operating at terahertz

Shengxiang Wang, Frédéric Garet, Karine Blary, Eric Lheurette, Jean Louis Coutaz, and Didier Lippens

Appl. Phys. Lett. 97, 181902 (2010); http://dx.doi.org/10.1063/1.3511540 (3 pages) | Cited 2 times

Online Publication Date: 1 November 2010

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We report on angle-resolved time domain spectroscopy (TDS) carried out on a prismlike negative index metamaterial operating around 0.5 THz. The wedge-type devices are constituted of hole arrays etched in gold thin films, which are stacked according to a sequential mask shift. By means of a goniometric TDS setup and subsequent analysis of the temporal waveforms, negative refraction is demonstrated with values close to n = −1 around 0.5 THz. The dispersion of refractive index retrieved from the Snell–Descartes law shows comparable trends in comparison with the dispersion deduced from complex transmission and reflection measurements on slab-type samples.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Retrieval of terahertz spectroscopic signatures in the presence of rough surface scattering using wavelet methods

M. H. Arbab, D. P. Winebrenner, E. I. Thorsos, and A. Chen

Appl. Phys. Lett. 97, 181903 (2010); http://dx.doi.org/10.1063/1.3507384 (3 pages) | Cited 2 times

Online Publication Date: 1 November 2010

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Scattering of terahertz waves by surface roughness can obscure spectral signatures of chemicals at these frequencies. We demonstrate this effect using controlled levels of surface scattering on α-lactose monohydrate pellets. Furthermore, we show an implementation of wavelet methods that can retrieve terahertz spectral information from rough surface targets. We use a multiresolution analysis of the rough-surface-scattered signal utilizing the maximal overlap discrete wavelet transform (MODWT) to extract the resonant signature of lactose. We present a periodic extension technique to circumvent the circular boundary conditions of MODWT, which can be robustly used in an automated terahertz stand-off detection device.
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78.70.Gq Microwave and radio-frequency interactions
68.35.B- Structure of clean surfaces (and surface reconstruction)
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

Chunming Yin, Bo Shen, Qi Zhang, Fujun Xu, Ning Tang, Longbin Cen, Xinqiang Wang, Yonghai Chen, and Jinling Yu

Appl. Phys. Lett. 97, 181904 (2010); http://dx.doi.org/10.1063/1.3511768 (3 pages) | Cited 1 time

Online Publication Date: 1 November 2010

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The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1−xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1−xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV Å3. The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.40.+w Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Blue-green light photochromism in europium doped BaMgSiO4

Morito Akiyama

Appl. Phys. Lett. 97, 181905 (2010); http://dx.doi.org/10.1063/1.3509417 (3 pages) | Cited 1 time

Online Publication Date: 1 November 2010

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BaMgSiO4 (BMS) can be sensed to blue light (wavelength λ = 405 nm) by doped europium (Eu). Eu doped BMS turns to bright pink, and is bleached by green light (λ = 475–532 nm) irradiation in several seconds. The coloration-decoloration process is repeatable and first. The colored state hardly changes for over 480 h (20 days), and is stable even at 100 °C. The blue-green light photochromism can be explained by electron transfers between doped Eu and oxygen defects. The doped Eu broadens the absorption band of BMS, and supplies excited electrons. The oxygen defects form electron traps, which catch excited electrons, and become F-like color centers.
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78.20.-e Optical properties of bulk materials and thin films
61.72.jn Color centers
71.55.Ht Other nonmetals
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Enhanced carbon nanotube fibers by polyimide

Chao Fang, Jingna Zhao, Jingjing Jia, Zuoguang Zhang, Xiaohua Zhang, and Qingwen Li

Appl. Phys. Lett. 97, 181906 (2010); http://dx.doi.org/10.1063/1.3511451 (3 pages)

Online Publication Date: 2 November 2010

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The performance of carbon nanotube (CNT) fibers is limited by the intertube characteristics. Here we report a direct method of curing to improve mechanical properties of poly(amic acid)-infiltrated fibers. After curing at 190 °C for 60 min the fibers composed of double- and triple-walled CNTs, their strength is stably improved by 30.3%, from 1.58 to 2.06 GPa. The enhancement arises from the increase in shear stress between tube surfaces, by measuring the static frictional force of CNT fibers. Due to the existence of CNTs, the imidization temperature of polyimide drops greatly from 218 to 157 °C.
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81.07.De Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear
82.35.-x Polymers: properties; reactions; polymerization

In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb(Zr,Ti)O3 films

Mitsumasa Nakajima, Hiroshi Nakaki, Yoshitaka Ehara, Tomoaki Yamada, Ken Nishida, Takashi Yamamoto, Minoru Osada, and Hiroshi Funakubo

Appl. Phys. Lett. 97, 181907 (2010); http://dx.doi.org/10.1063/1.3502591 (3 pages) | Cited 2 times

Online Publication Date: 2 November 2010

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We employed in situ Raman spectroscopy under electric field for (100)/(001)-oriented tetragonal Pb(Ti0.61Zr0.39)O3 films with (001)-volume fraction (VC) of 35%. The increase in VC was revealed above 200 kV/cm, which resulted in the larger remanent polarization. In addition, the application of high enough field also brings a feature, i.e., large reversible change in VC with/without electric field that can quantitatively explain the enhanced piezoelectric response. These demonstrate the usefulness of in situ Raman observation to probe the domain contributions to the electrical and piezoelectric responses.
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77.55.hj PZT
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
78.30.Hv Other nonmetallic inorganics

In situ spectroscopic ellipsometry studies of trivalent chromium coating on aluminum

Sameh Dardona and Mark Jaworowski

Appl. Phys. Lett. 97, 181908 (2010); http://dx.doi.org/10.1063/1.3511472 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2010

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In situ spectroscopic ellipsometry in the spectral region of 1.3–4.3 eV has been employed to monitor, in real-time, the formation of trivalent Cr process (TCP) conversion coatings on polished Al substrates. The measured ellipsometry parameters (Ψ and Δ), as a function of immersion time, reveal that the initial stages of film formation include the chemical thinning of the native oxide layer, formation of a very thin initiation layer and the subsequent rapid formation of the TCP film. The film optical constant is modeled using Cauchy dispersion relation and its thickness was determined as a function of immersion time during growth.
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78.66.Bz Metals and metallic alloys
78.40.Kc Metals, semimetals, and alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.A- Nucleation and growth
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Broadening of optical transitions in polycrystalline CdS and CdTe thin films

Jian Li, Jie Chen, and R. W. Collins

Appl. Phys. Lett. 97, 181909 (2010); http://dx.doi.org/10.1063/1.3511744 (3 pages) | Cited 3 times

Online Publication Date: 3 November 2010

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The dielectric functions ε of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in ε due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path λ is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from ε. The rate at which broadening occurs with λ−1 is different for each CP, enabling a carrier group speed υg to be identified for the CP. With the database for υg, ε can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.
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78.66.Hf II-VI semiconductors
68.55.ag Semiconductors
81.15.Cd Deposition by sputtering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Graphene as intermediate phase in fullerene and carbon nanotube growth: A Young–Laplace surface-tension model

Vinay Gupta

Appl. Phys. Lett. 97, 181910 (2010); http://dx.doi.org/10.1063/1.3509403 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2010

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Growth mechanism of carbon nanotubes using arc-discharge are not fully understood up to now. Here, I show that the formation of carbon nanotubes and fullerene in a pure carbon arc in helium atmosphere may involve graphene bubbles. Electron microscopy shows the graphene bubbles formation at the anode surface. The growth of fullerene and nanotubes can occur from these bubbles due to a large pressure difference (103–104 bar) at the anode interface and can be understood in terms of Young–Laplace law of surface tension. This model can explain the helium pressure dependence of fullerene and carbon nanotube formation.
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81.05.ub Fullerenes and related materials
81.07.De Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
68.03.Cd Surface tension and related phenomena
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Thermodynamic study on metastable phase: From polycrystalline to nanocrystalline system

Wenwu Xu, Xiaoyan Song, and Zhexu Zhang

Appl. Phys. Lett. 97, 181911 (2010); http://dx.doi.org/10.1063/1.3509407 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2010

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First an approach based on the Debye model is developed to quantify the thermodynamic parameters of metastable phase in the conventional coarse-grained polycrystalline systems. Subsequently, by combining the experimental measurements on heat capacity with the nanothermodynamic calculations for nanocrystalline alloys, a method is established to determine the fundamental thermodynamic functions of the metastable phases in both polycrystalline and nanocrystalline alloy systems. Taking the typical metastable-phase SmCo7 alloy as an example, the thermodynamic properties of polycrystalline and nanocrystalline systems are studied, and good agreement between model calculations and experimental results is achieved.
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65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions

Micellization and adsorption of surfactant in a nonpolar liquid in micrometer scale geometries

F. Beunis, F. Strubbe, M. Marescaux, K. Neyts, and A. R. M. Verschueren

Appl. Phys. Lett. 97, 181912 (2010); http://dx.doi.org/10.1063/1.3503968 (3 pages)

Online Publication Date: 3 November 2010

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Mixtures of nonpolar liquid and surfactant are used increasingly in applications with microscopic dimensions. However, most methods to characterize them are performed on bulk solutions. We measure electrical transient currents in thin layers of nonpolar liquid with surfactant and derive several properties from these measurements. This paper reports the results for different liquid layer thicknesses and surfactant concentrations. We observe a dependence on the layer thickness of the inverse micelle concentration, which cannot be explained by bulk micellization alone. A model including surface adsorption is proposed that describes surfactant behavior in microscale geometries.
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82.70.Dd Colloids
61.20.Gy Theory and models of liquid structure
82.70.Uv Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)
68.43.Mn Adsorption kinetics

Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction

V. Holý, X. Martí, L. Horák, O. Caha, V. Novák, M. Cukr, and T. U. Schülli

Appl. Phys. Lett. 97, 181913 (2010); http://dx.doi.org/10.1063/1.3514240 (3 pages)

Online Publication Date: 3 November 2010

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Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the Mn K absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data demonstrate that the rate of the out-diffusion of the Mn interstitials from the Ga tetrahedrons significantly exceeds that from the As tetrahedrons.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.Lw Diffusion of other defects
61.72.jj Interstitials

Urbach tail studies by luminescence filtering in moderately doped bulk InP

Arsen V. Subashiev, Oleg Semyonov, Zhichao Chen, and Serge Luryi

Appl. Phys. Lett. 97, 181914 (2010); http://dx.doi.org/10.1063/1.3510470 (3 pages) | Cited 4 times

Online Publication Date: 3 November 2010

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The shape of the photoluminescence line registered from a side edge of InP wafer is studied as a function of the distance from the excitation spot. The observed redshift in the luminescence maximum is well described by radiation filtering and is consistent with the absorption spectra. Our method provides an independent and accurate determination of the Urbach tails in moderately doped semiconductors.
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78.55.Cr III-V semiconductors
66.30.-h Diffusion in solids

Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

Ching-Shun Ku, Jheng-Ming Huang, Ching-Yuan Cheng, Chih-Ming Lin, and Hsin-Yi Lee

Appl. Phys. Lett. 97, 181915 (2010); http://dx.doi.org/10.1063/1.3511284 (3 pages)

Online Publication Date: 3 November 2010

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Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 °C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra.
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78.66.Hf II-VI semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Cc Kinetics of defect formation and annealing
78.55.Et II-VI semiconductors

Microtwin reduction in 3C–SiC heteroepitaxy

A. Severino and F. La Via

Appl. Phys. Lett. 97, 181916 (2010); http://dx.doi.org/10.1063/1.3514559 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2010

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In this letter, we have studied the density of microtwins in the vicinity of the film surface, by using in-plane grazing incidence diffraction technique, to suggest a reduction trend of such defects at different growth rates. In (100) 3C–SiC heteroepitaxy, microtwin density decreases when a slower growth rate process is performed. A reduction ratio of microtwins of 0.16, 0.2, and 0.28 for 2 μm/h, 5 μm/h, and 10 μm/h, respectively, has been obtained. The relationship between microtwin density and growth rate, or Si/H2 ratio, found with this technique is in perfect agreement with the pre-existent literature.
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68.55.ag Semiconductors
61.72.Mm Grain and twin boundaries

Prediction of thermal radiative properties (300–1000 K) of La2NiO4+δ ceramics

M. T. Ta, J. Y. Rolland, P. Echegut, B. Rousseau, M. Zaghrioui, F. Giovannelli, H. Gomart, P. Lenormand, and F. Ansart

Appl. Phys. Lett. 97, 181917 (2010); http://dx.doi.org/10.1063/1.3511344 (3 pages) | Cited 1 time

Online Publication Date: 4 November 2010

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A multiscale numerical model is developed to predict the thermal radiative properties (TRP) of rough La2NiO4+δ coatings. The model integrates intrinsic and extrinsic contributions related to the chemical composition and the texture, respectively. High-temperature infrared reflectivity and thermogravimetric measurements on a La2NiO4+δ single crystal make it possible to understand the role of the excess oxygen in the intrinsic TRP. We show that dense ceramics with thicknesses higher than 4 μm are optically thick, and that one can adjust the surface roughness parameters to predict their TRP.
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78.30.Hv Other nonmetallic inorganics
82.80.-d Chemical analysis and related physical methods of analysis
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Physical mechanisms for picosecond laser ablation of silicon carbide at infrared and ultraviolet wavelengths

Sha Tao, Ronald L. Jacobsen, and Benxin Wu

Appl. Phys. Lett. 97, 181918 (2010); http://dx.doi.org/10.1063/1.3511739 (3 pages)

Online Publication Date: 4 November 2010

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Investigations have been performed on the physical mechanisms of picosecond laser ablation of silicon carbide at 355 and 1064 nm, which have not been well understood yet. The study shows that the low-fluence ablation rates are close for 355 and 1064 nm, and the dominant material removal mechanism should be surface evaporation. At fluences above ∼ 2 J/cm2, the ablation rate increases very quickly for 355 nm, and the associated dominant mechanism is very likely to be critical point phase separation. For 1064 nm, the ablation rate variation with fluence above ∼ 2 J/cm2 follows the same trend as that for low fluences, and the mechanism should remain as surface evaporation.
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79.20.Eb Laser ablation
68.35.Rh Phase transitions and critical phenomena
64.75.Qr Phase separation and segregation in semiconductors

Relation between physical parameters and thermal stability of liquid-crystal blue phase

Hui-Yu Chen, Hsin-Hung Liu, Jia-Liang Lai, Chih-Hao Chiu, and Ji-Yi Chou

Appl. Phys. Lett. 97, 181919 (2010); http://dx.doi.org/10.1063/1.3509413 (3 pages)

Online Publication Date: 4 November 2010

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Correlations between the stability of blue phases and the physical parameters of liquid-crystal hosts are reported in this study. Experimental results show that liquid-crystal blue phases are more thermostabilized when the dielectric anisotropy is reduced or the elastic constants increased. These correlations can be explained by Defect theory and Landau theory for blue phases. Moreover, the results give us the clues to develop more suitable blue-phase materials for fundamental researches or fast photonic devices.
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61.30.Mp Blue phases and other defect-phases
62.10.+s Mechanical properties of liquids
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
61.30.Jf Defects in liquid crystals

Formation of In2O3 nanorings on Si substrates

C. L. Hsin, S. Y. Yu, C. W. Huang, and W. W. Wu

Appl. Phys. Lett. 97, 181920 (2010); http://dx.doi.org/10.1063/1.3511539 (3 pages)

Online Publication Date: 5 November 2010

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A new approach to form the In2O3 nanorings (NRs) has been proven by tailoring the difference between property of metal and metal oxide. The formation process of the In2O3 NRs is proposed to be resulted form a subtle competition between the oxidation and evaporation of indium at the rim and center, respectively. Patterned In2O3 NRs have been grown on (001) Si substrates in combination with nanosphere lithography. The size and morphology of the NRs can be controlled by the size of polystyrene nanospheres and the thickness of indium layer. The optical property measurements showed that the In2O3 NRs are sensitive in absorption and emission of light between 600 and 622 nm in wavelength. The patterned In2O3 NRs on silicon are advantageous for fabricating optical-response photonic devices at the desired locations and direct integration to the silicon-based photonic devices with current processing technology.
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81.16.Nd Micro- and nanolithography
61.66.-f Structure of specific crystalline solids
61.46.-w Structure of nanoscale materials
81.65.Mq Oxidation
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Heavy noble gas (Kr, Xe) irradiated (111) InP nanoporous honeycomb membranes with enhanced ultrafast all-optical terahertz emission

K. Radhanpura, S. Hargreaves, R. A. Lewis, L. Sirbu, and I. M. Tiginyanu

Appl. Phys. Lett. 97, 181921 (2010); http://dx.doi.org/10.1063/1.3509404 (3 pages) | Cited 1 time

Online Publication Date: 5 November 2010

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Nanoporous honeycomb membranes on InP (111) surfaces emit ultrafast coherent terahertz pulses under near-infrared optical excitation. Irradiating the membranes with heavy noble gas Kr or Xe ions enhances the terahertz emission. The emission does not vary with in-plane magnetic field rotation and exhibits three-cycle dependence on azimuthal-angle rotation. Both suggest the terahertz source is not transient currents but optical rectification enhanced by the heavy-ion irradiation.
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78.67.Rb Nanoporous materials
78.70.Gq Microwave and radio-frequency interactions
78.47.D- Time resolved spectroscopy (>1 psec)
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