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Applied Physics Letters / Volume 97 / Issue 19 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 193506 (2010); http://dx.doi.org/10.1063/1.3511471 (3 pages)

Theoretical investigation of Lamb wave characteristics in AlN/3C–SiC composite membranes

Chih-Ming Lin1, Yung-Yu Chen2, and Albert P. Pisano1

1Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA and Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, USA
2Department of Mechanical Engineering, Tatung University, Taipei 10452, Taiwan

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(Received 3 September 2010; accepted 12 October 2010; published online 9 November 2010)

Cubic silicon carbide (3C–SiC) layer can provide advantages of high frequency and high quality factor for Lamb wave devices due to the superior properties of high acoustic velocity and low acoustic loss. In this study, Lamb wave propagation characteristics in composite membranes consisting of a c-axis oriented aluminum nitride (AlN) film and an epitaxial 3C–SiC (100) layer are investigated by theoretical calculation. The lowest symmetric mode Lamb wave propagating along the [011] direction exhibits a phase velocity higher than 10 000 m/s and an electromechanical coupling coefficient above 2% in the AlN/3C–SiC multilayered membranes.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, composite materials, epitaxial layers, membranes, semiconductor thin films, silicon compounds, surface acoustic waves, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3511471

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    C. -M. Lin, W. -C. Lien, V. V. Felmetsger, M. A. Hopcroft, D. G. Senesky, and A. P. Pisano, Appl. Phys. Lett. 97, 141907 (2010)APPLAB000097000014141907000001.

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