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8 Nov 2010

Volume 97, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages)

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang
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Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films

Xu Gao, Yidong Xia, Jianfeng Ji, Hanni Xu, Yi Su, Haitao Li, Chunjun Yang, Hongxuan Guo, Jiang Yin, and Zhiguo Liu

Appl. Phys. Lett. 97, 193501 (2010); http://dx.doi.org/10.1063/1.3501967 (3 pages)

Online Publication Date: 8 November 2010

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Well-developed bipolar resistive switching behaviors have been revealed in Pt/GaOx/ITO stacks without an electroforming process. By substituting platinum with titanium as the top electrode, switching polarity changed from “counter-Figure-8” to “Figure-8.” The modulation of Schottky barrier at the Pt/GaOx interface induced by migration of oxygen vacancies was proposed to explain the switching in Pt/GaOx/ITO stacks, while the switching in Ti/GaOx/ITO stacks was ascribed to the redox reaction at the Ti/GaOx interface. Our experimental result further confirms the migration of oxygen vacancies in the vicinity of the electrode area plays an important role in the resistive switching process.
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82.45.-h Electrochemistry and electrophoresis
82.30.-b Specific chemical reactions; reaction mechanisms
81.65.Mq Oxidation
61.72.jd Vacancies
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.-a Thin film structure and morphology

Phononic crystals operating in the gigahertz range with extremely wide band gaps

Y. M. Soliman, M. F. Su, Z. C. Leseman, C. M. Reinke, I. El-Kady, and R. H. Olsson, III

Appl. Phys. Lett. 97, 193502 (2010); http://dx.doi.org/10.1063/1.3504701 (3 pages) | Cited 8 times

Online Publication Date: 8 November 2010

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Phononic crystals have numerous potential applications including use as filters and oscillators in communications systems and as acoustic isolators for resonant sensors such as gyroscopes. These applications are based on the ability of phononic crystals to exhibit elastic band gaps, frequency bands where the propagation of acoustic waves is forbidden. Here, we focus on solid-solid phononic crystals (solid inclusions in a solid matrix), since they typically exhibit wider band gaps than those observed with air-solid phononic crystals (air inclusions in a solid matrix). We present a micromachined solid-solid phononic crystal operating at 1.4 GHz center frequency with an ultrawide 800 MHz band gap.
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63.20.-e Phonons in crystal lattices

Propagation of acoustic waves and waveguiding in a two-dimensional locally resonant phononic crystal plate

Mourad Oudich, M. Badreddine Assouar, and Zhilin Hou

Appl. Phys. Lett. 97, 193503 (2010); http://dx.doi.org/10.1063/1.3513218 (3 pages) | Cited 11 times

Online Publication Date: 8 November 2010

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We demonstrate the waveguiding of Lamb waves in a locally resonant phononic crystal (LRPC) and we present an analysis of the guiding of elastic waves in straight and bent waveguides. The finite element method combined with the supercell technique was used to analyze the band gap and the dispersion relation of LRPC waveguides. Unlike the traditional phononic crystals, we show the possibility of guiding only one confined mode inside a LRPC waveguide. We discuss the confinement and the transmission of the guided mode as a function of the width of the waveguide based on both the band structure and the displacement field.
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62.65.+k Acoustical properties of solids
68.35.Iv Acoustical properties
63.20.-e Phonons in crystal lattices

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

Dae Woong Kwon, Jang Hyun Kim, Ji Soo Chang, Sang Wan Kim, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jae Chul Park, Ihun Song, Chang Jung Kim, U In Jung, and Byung-Gook Park

Appl. Phys. Lett. 97, 193504 (2010); http://dx.doi.org/10.1063/1.3508955 (3 pages)

Online Publication Date: 8 November 2010

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A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.
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85.30.Tv Field effect devices
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

Paritosh Manurkar, Shaban Ramezani-Darvish, Binh-Minh Nguyen, Manijeh Razeghi, and John Hubbs

Appl. Phys. Lett. 97, 193505 (2010); http://dx.doi.org/10.1063/1.3514244 (3 pages) | Cited 10 times

Online Publication Date: 8 November 2010

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A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3×10−4 A cm−2 and differential resistance-area product at zero bias R0A of 166 Ω cm2 at 81 K, and 5.1×10−5 A cm−2 and 1286 Ω cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.
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42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes

Theoretical investigation of Lamb wave characteristics in AlN/3C–SiC composite membranes

Chih-Ming Lin, Yung-Yu Chen, and Albert P. Pisano

Appl. Phys. Lett. 97, 193506 (2010); http://dx.doi.org/10.1063/1.3511471 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2010

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Cubic silicon carbide (3C–SiC) layer can provide advantages of high frequency and high quality factor for Lamb wave devices due to the superior properties of high acoustic velocity and low acoustic loss. In this study, Lamb wave propagation characteristics in composite membranes consisting of a c-axis oriented aluminum nitride (AlN) film and an epitaxial 3C–SiC (100) layer are investigated by theoretical calculation. The lowest symmetric mode Lamb wave propagating along the [011] direction exhibits a phase velocity higher than 10 000 m/s and an electromechanical coupling coefficient above 2% in the AlN/3C–SiC multilayered membranes.
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68.55.ag Semiconductors
81.15.Aa Theory and models of film growth
82.45.Mp Thin layers, films, monolayers, membranes
81.05.Hd Other semiconductors
68.35.Iv Acoustical properties

A terahertz plasmon cavity detector

G. C. Dyer, N. Q. Vinh, S. J. Allen, G. R. Aizin, J. Mikalopas, J. L. Reno, and E. A. Shaner

Appl. Phys. Lett. 97, 193507 (2010); http://dx.doi.org/10.1063/1.3513339 (3 pages) | Cited 6 times

Online Publication Date: 10 November 2010

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Sensitivity of a plasmonic detector is enhanced by integrating a broadband log-periodic antenna with a two-dimensional plasma cavity that is defined by source, drain, and multiple gates of a GaAs/AlGaAs high electron mobility transistor. Both narrow-band terahertz detection and a rich harmonic spectrum are evident. With a bolometric sensor in the channel, we report responsivity, on resonance at 235–240 GHz and at 20 K, of up to 7 kV/W and a noise equivalent power of 5×10−10 W/Hz1/2.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.75.Hh Spin polarized field effect transistors
72.20.-i Conductivity phenomena in semiconductors and insulators
52.25.Fi Transport properties
84.40.Ba Antennas: theory, components and accessories

Droop in III-nitrides: Comparison of bulk and injection contributions

Aurélien David and Nathan F. Gardner

Appl. Phys. Lett. 97, 193508 (2010); http://dx.doi.org/10.1063/1.3515851 (3 pages) | Cited 7 times

Online Publication Date: 11 November 2010

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We study mechanisms which are thought to contribute to efficiency droop in III-nitrides. We first observe droop in a photoluminescence (PL) experiment on bulk GaN, which confirms the existence of a bulk contribution to droop, unrelated to piezoelectric fields or alloy fluctuations. We then perform biased-PL on a series of InGaN light-emitting diodes to estimate the potential impact of carrier leakage on PL experiments. We conclude that carrier leakage is only significant at very low pump densities and does not contribute to droop, thus validating the use of PL to characterize droop.
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85.60.Jb Light-emitting devices

Is Auger recombination the ultimate performance limiter in concentrator solar cells?

Alexis Vossier, Baruch Hirsch, and Jeffrey M. Gordon

Appl. Phys. Lett. 97, 193509 (2010); http://dx.doi.org/10.1063/1.3510474 (3 pages) | Cited 2 times

Online Publication Date: 11 November 2010

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In principle, Auger recombination should constitute the ultimate limiting mechanism for concentrator photovoltaic performance as optical concentration, and hence current densities, are raised to progressively higher values. In reality, however, the effect will be rate-limiting only in indirect-band-gap solar cells—a point well established for silicon but not yet explored for germanium which comprises the lowest-energy junction in today's ultraefficient commercial multijunction concentrator solar cells. Detailed calculations of when Auger recombination should play a substantial role are presented, and reinforced by existing data.
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88.40.H- Solar cells (photovoltaics)
88.40.ff Performance testing
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.20.Fv Electron impact: Auger emission

On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

Marko J. Tadjer, Tatyana I. Feygelson, Karl D. Hobart, Joshua D. Caldwell, Travis J. Anderson, James E. Butler, Charles R. Eddy, Jr., D. Kurt Gaskill, K. K. Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Fritz J. Kub, Gregory Sollenberger, and Leonard Brillson

Appl. Phys. Lett. 97, 193510 (2010); http://dx.doi.org/10.1063/1.3515858 (3 pages) | Cited 1 time

Online Publication Date: 12 November 2010

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Heterojunctions of p+ B-doped nanocrystalline diamond (NCD) to n− 4H-SiC were studied by electrical and cathodoluminescence (CL) methods. Current rectification at 30 °C had a curvature coefficient γ0 of 42.1 V−1 at zero bias, γmax of 105.35 V−1 at 0.2 V, and a reverse current of <10 nA/cm2. The NCD sheet resistance decreased from 4.1×1011 to 403.56 Ω/sq. as the carrier density Ns was increased from 3.5×105 to 1.5×1016 cm−2 by B2H6 doping. The 348 cm2/V-s mobility of the B-free NCD films was comparable to that of single crystal diamond. CL data revealed traps 0.6–0.8 eV from the NCD EV edge.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Li Other semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Ei Rectification
78.60.Hk Cathodoluminescence, ionoluminescence

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

L. Lin, H. L. Zhen, N. Li, W. Lu, Q. C. Weng, D. Y. Xiong, and F. Q. Liu

Appl. Phys. Lett. 97, 193511 (2010); http://dx.doi.org/10.1063/1.3517253 (3 pages) | Cited 4 times

Online Publication Date: 12 November 2010

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The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: Ea,micro from the built-in potential in the microscale and Ea,nano related to the thermally assisted tunneling in nanoscale. The activation energies Ea,micro and Ea,nano decrease exponentially and linearly with increasing applied electric field, respectively.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Gk Tunneling
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