APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Nov 2010

Volume 97, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages)

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Switching mechanism of polarization vortex in single-crystal ferroelectric nanodots

Jie Wang

Appl. Phys. Lett. 97, 192901 (2010); http://dx.doi.org/10.1063/1.3515847 (3 pages) | Cited 2 times

Online Publication Date: 8 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The polarization switching in a single-crystal ferroelectric tetragonal nanodot subjected to curled electric fields is investigated by a phase field model. The simulation results show that the switching of polarization vortex in the tetragonal nanodot does not begin from the location with the highest energy density, which is different from those of ferroelectric nanotubes and ferroelectric cylindrical nanodots. It is found that the vortex switching begins from the dot corners with the lowest elastic energy density, which implies that the elastic constraint as well as the geometry play an important role on the switching of polarization vortex in ferroelectric nanostructures.
Show PACS
77.80.Fm Switching phenomena
61.46.-w Structure of nanoscale materials

Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor

G. He, Z. Q. Sun, M. Liu, and L. D. Zhang

Appl. Phys. Lett. 97, 192902 (2010); http://dx.doi.org/10.1063/1.3515923 (3 pages) | Cited 3 times

Online Publication Date: 9 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of nitrogen incorporation on the band alignment and electrical properties of HfTiO gate dielectric complementary metal-oxide-semiconductor (MOS) capacitors has been investigated by spectroscopy ellipsometry, x-ray photoelectron spectroscopy, and electrical measurements. Reduction in optical band gap and band offsets has been detected. However, improved electrical properties have been achieved from HfTiON gate dielectric MOS capacitors attributed to the nitrogen-induced reduction in oxygen-related traps and the improved interface quality. Although there is a nitrogen-induced reduction in band gap and band offset, the sufficient barrier heights still makes HfTiON a promising high-k gate dielectric candidate for proposed near-future complementary metal-oxide-semiconductor applications.
Show PACS
84.32.Tt Capacitors
85.30.Tv Field effect devices

Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films

A. Soukiassian, A. Tagantsev, and N. Setter

Appl. Phys. Lett. 97, 192903 (2010); http://dx.doi.org/10.1063/1.3505930 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this manuscript we report dielectric measurements of Mg and Li doped ZnO ceramics and thin films of various compositions. We have tried to reproduce the reported ferroelectriclike behavior in doped ZnO ceramics and thin films and observed anomalous dielectric peak in our samples at temperatures similar to the reported data. However, this peak disappeared when the same samples were measured in vacuum. Our results suggest that previously reported anomalous dielectric peak in doped ZnO samples is not related to the ferroelectric phase transition and is a measurement artifact originated from the presence of water vapor in the measurement system.
Show PACS
77.55.hf ZnO
81.05.Dz II-VI semiconductors
77.80.B- Phase transitions and Curie point
77.84.Cg PZT ceramics and other titanates
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close