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8 Nov 2010

Volume 97, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 97, 193101 (2010); http://dx.doi.org/10.1063/1.3504664 (3 pages)

Qingzhen Hao, Yong Zeng, Xiande Wang, Yanhui Zhao, Bei Wang, I-Kao Chiang, Douglas H. Werner, Vincent Crespi, and Tony Jun Huang
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Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon

Z. F. Di, M. Q. Huang, Y. Q. Wang, and M. Nastasi

Appl. Phys. Lett. 97, 194101 (2010); http://dx.doi.org/10.1063/1.3513352 (3 pages) | Cited 1 time

Online Publication Date: 8 November 2010

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The influence of dynamic and thermal annealing on hydrogen platelet formation in silicon have been studied. For cryogenic and room temperature implantations, where dynamic annealing is suppressed, hydrogen platelets form upon subsequent thermal annealing on primarily (100) planes. However, under high temperature implantation (dynamic annealing), a high density hydrogen platelet network consisting of both (111) platelets and (100) platelets is observed. Our findings demonstrate that hydrogen implantation under dynamic annealing conditions leads to a modification of the implantation-induced stress, which eventually guide the nucleation and growth of hydrogen-induced platelets.
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61.72.Cc Kinetics of defect formation and annealing
82.80.-d Chemical analysis and related physical methods of analysis
61.72.uf Ge and Si

Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study

Yi Zhang, Cui-Zu Chang, Ke He, Li-Li Wang, Xi Chen, Jin-Feng Jia, Xu-Cun Ma, and Qi-Kun Xue

Appl. Phys. Lett. 97, 194102 (2010); http://dx.doi.org/10.1063/1.3516160 (3 pages) | Cited 2 times

Online Publication Date: 11 November 2010

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Bi2Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi2Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.
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71.20.Ps Other inorganic compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
65.40.gp Surface energy
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